TDA8594 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5 — 11 June 2013 27 of 49
NXP Semiconductors
TDA8594
I
2
C-bus controlled 4 50 W power amplifier
10. Thermal characteristics
11. Characteristics
P
tot
total power dissipation T
case
= 70 C-80W
V
esd
electrostatic discharge
voltage
human body model;
C = 100 pF;
R
s
=1.5k
-2000V
machine model;
C = 200 pF; R
s
=10;
L
s
=0.75H
-200V
Table 15. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 16. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-c)
thermal resistance from junction
to case
1K/W
R
th(j-a)
thermal resistance from junction
to ambient
in free air 40 K/W
Table 17. Characteristics
Refer to Figure 29 at V
P
=V
P1
=V
P2
= 14.4 V; R
L
=4
; f = 1 kHz; R
S
=0
; normal mode; unless otherwise specified.
Tested at T
amb
=25
C; guaranteed for T
amb
=
40
C to +105
C.
Symbol Parameter Conditions Min Typ Max Unit
Supply voltage behavior
V
P
supply voltage R
L
= 4 8 14.4 18 V
R
L
= 2
[1]
8 14.4 16 V
I
q
quiescent current no load - 270 400 mA
I
stb
standby current V
STB
= 0.4 V - 4 15 A
V
O
output voltage 6.7 7 7.2 V
V
P(low)(mute)
low supply voltage mute with rising supply voltage 6.9 7.5 8 V
with falling supply voltage 6.3 6.8 7.4 V
V
P(low)(mute)
low supply voltage mute
hysteresis
0.1 0.7 1 V
V
th(ovp)
overvoltage protection
threshold voltage
18 20 22 V
V
hr
headroom voltage when headroom protection is
activated; see Figure 7
1.11.62.0V
V
POR
power-on reset voltage see Figure 9 4.15.05.8V
V
O(offset)
output offset voltage amplifier on 95 0 +95 mV
amplifier mute 25 0 +25 mV
line driver mode 40 0 +40 mV
R
L(tol)
load resistance tolerance V
P
18 V 3.2 4 -
V
P
16 V 1.6 2 -