©2014 Silicon Storage Technology, Inc. DS20005086B 11/14
Data Sheet
www.microchip.com
Features
LPC Interface Flash
SST49LF080A: 1024K x8 (8 Mbit)
Conforms to Intel LPC Interface Specification 1.0
Flexible Erase Capability
Uniform 4 KByte Sectors
Uniform 64 KByte overlay blocks
64 KByte Top Boot Block protection
Chip-Erase for PP Mode Only
Single 3.0-3.6V Read and Write Operations
Superior Reliability
Endurance: 100,000 Cycles (typical)
Greater than 100 years Data Retention
Low Power Consumption
Active Read Current: 6 mA (typical)
Standby Current: 10 µA (typical)
Fast Sector-Erase/Byte-Program Operation
Sector-Erase Time: 18 ms (typical)
Block-Erase Time: 18 ms (typical)
Chip-Erase Time: 70 ms (typical)
Byte-Program Time: 14 µs (typical)
Chip Rewrite Time: 16 seconds (typical)
Single-pulse Program or Erase
Internal timing generation
Two Operational Modes
Low Pin Count (LPC) Interface mode for
in-system operation
P arallel Programming (PP) Mode for fast production pro-
gramming
LPC Interface Mode
5-signal communication interface supporting byte Read
and Write
33 MHz clock frequency operation
WP# and TBL# pins provide hardware write protect for
entire chip and/or top boot bloc k
Standard SDP Command Set
Data# Polling and Toggle Bit for End-of-Write detection
5 GPI pins for system design flexibility
4 ID pins for multi-chip selection
Parallel Programming (PP) Mode
11-pin multiplexed address and 8-pin data
I/O interface
Supports fast programming In-System on
programmer equipment
CMOS and PCI I/O Compatibility
Packages Available
32-lead PLCC
32-lead TSOP (8mm x 14mm)
All non-Pb (lead-free) devices are RoHS compliant
8 Mbit LPC Flash
SST49LF080A
The SST49LF080A flash memory device is designed to interface with the LPC
bus for PC and Internet Appliance application in compliance with Intel Low Pin
Count (LPC) Interface Specification 1.0. Two interface modes are supported: LPC
mode for in-system operations and Parallel Programming (PP) mode to interface
with programming equipment. The SST49LF080A flash memory device is manu-
factured with proprietary, high-performance SuperFlash® Technology. The split-
gate cell design and thick-oxide tunneling injector attain better reliability and man-
ufacturability compared with alternate approaches
©2014 Silicon Storage Technology, Inc. DS20005086B 11/14
2
8 Mbit LPC Flash
SST49LF080A
Data Sheet
Product Description
SST49LF080A flash memory device is designed to interface with the LPC bus for PC and Internet
Appliance application in compliance with Intel Low Pin Count (LPC) Interface Specification 1.0. Two
interface modes are supported: LPC mode for in-system operations and Parallel Programming (PP)
mode to interface with programming equipment.
SST49LF080A flash memory device is manufactured with proprietary, high-performance SuperFlash
Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and
manufacturability compared with alternate approaches. The SST49LF080A device significantly
improves performance and reliability, while lowering power consumption. The SST49LF080A device
writes (Program or Erase) with a single 3.0-3.6V power supply. It uses less energy during Erase and
Program than alternative flash memory technologies. The total energy consumed is a function of the
applied voltage, current and time of application. For any give voltage range, the SuperFlash technology
uses less current to program and has a shorter erase time; the total energy consumed during any
Erase or Program operation is less than alternative flash memory technologies. The SST49LF080A
product provides a maximum Byte-Program time of 20 µsec. The entire memory can be erased and
programmed byte-by-byte typically in 16 seconds when using status detection features such as Toggle
Bit or Data# Polling to indicate the completion of Program operation. The SuperFlash technology pro-
vides fixed Erase and Program time, independent of the number of Erase/Program cycles that have
performed. Therefore the system software or hardware does not have to be calibrated or correlated to
the cumulative number of Erase cycles as is necessary with alternative flash memory technologies,
whose Erase and Program time increase with accumulated Erase/Program cycles.
To meet high density, surface mount requirements, the SST49LF080A device is offered in 32-lead
TSOP and 32-lead PLCC packages. See Figures 2 and 3 for pin assignments and Table 1 for pin
descriptions.
©2014 Silicon Storage Technology, Inc. DS20005086B 11/14
3
8 Mbit LPC Flash
SST49LF080A
Data Sheet
Functional Block Diagram
Figure 1: Functional Block Diagram
1235 B1.0
Y-Decoder
I/O Buffers and Data Latches
Address Buffers Latches
X-Decoder
SuperFlash
Memory
Control Logic
LCLK
RST# CE#MODE
GPI[4:0]
Programmer
Interface
WP#
TBL#
INIT#
ID[3:0]
LFRAME#
R/C#
OE#
WE#
A[10:0]
DQ[7:0]
LAD[3:0]
LPC
Interface

SST49LF080A-33-4C-NHE

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash 1M X 8 33MHz
Lifecycle:
New from this manufacturer.
Delivery:
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