MAX1710/MAX1711/MAX1712
High-Speed, Digitally Adjusted
Step-Down Controllers for Notebook CPUs
______________________________________________________________________________________ 19
The actual microfarad capacitance value required relates
to the physical size needed to achieve low ESR, as well
as to the chemistry of the capacitor technology. Thus, the
capacitor is usually selected by ESR and voltage rating
rather than by capacitance value (this is true of tantalums,
OS-CONs, and other electrolytics).
When using low-capacity filter capacitors such as ceram-
ic or polymer types, capacitor size is usually determined
by the capacity needed to prevent the overvoltage pro-
tection circuit from being tripped when transitioning from
a full-load to a no-load condition. The capacitor must be
large enough to prevent the inductor’s stored energy from
launching the output above the overvoltage protection
threshold. Generally, once enough capacitance is added
to meet the overshoot requirement, undershoot at the ris-
ing load edge is no longer a problem (see also V
SAG
equation under Design Procedure).
With integrators disabled, the amount of overshoot due to
stored inductor energy can be calculated as:
where I
PEAK
is the peak inductor current. To absolutely
minimize the overshoot, disable the integrator first, since
the inherent delay of the integrator can cause extra “run-
on” switching cycles to occur after the load change.
Output Capacitor Stability Considerations
Stability is determined by the value of the ESR zero rela-
tive to the switching frequency. The point of instability is
given by the following equation:
For a typical 300kHz application, the ESR zero frequency
must be well below 95kHz, preferably below 50kHz.
Tantalum and OS-CON capacitors in widespread use at
the time of publication have typical ESR zero frequencies
of 15kHz. In the design example used for inductor selec-
tion, the ESR needed to support 50mVp-p ripple is
50mV/3.5A = 14.2m. Three 470µF/4V Kemet T510 low-
ESR tantalum capacitors in parallel provide 15m max
ESR. Their typical combined ESR results in a zero at
14.1kHz, well within the bounds of stability.
Don’t put high-value ceramic capacitors directly across
the fast feedback inputs (FB to GND) without taking pre-
cautions to ensure stability. Large ceramic capacitors
can have a high ESR zero frequency and cause erratic,
unstable operation. However, it’s easy to add enough
series resistance by placing the capacitors a couple of
inches downstream from the junction of the inductor and
FB pin (see the All-Ceramic-Capacitor Application sec-
tion).
Unstable operation manifests itself in two related but dis-
tinctly different ways: double-pulsing and fast-feedback
loop instability.
Double-pulsing occurs due to noise on FB or because
the ESR is so low that there isn’t enough voltage ramp in
the output voltage (FB) signal. This “fools” the error com-
parator into triggering a new cycle immediately after the
400ns minimum off-time period has expired. Double-
pulsing is more annoying than harmful, resulting in noth-
ing worse than increased output ripple. However, it can
indicate the possible presence of loop instability, which
is caused by insufficient ESR.
Loop instability can result in oscillations at the output
after line or load perturbations that can trip the overvolt-
age protection latch or cause the output voltage to fall
below the tolerance limit.
The easiest method for checking stability is to apply a
very fast zero-to-max load transient (see MAX1710
Evaluation Kit manual) and carefully observe the output
voltage ripple envelope for overshoot and ringing. It
can help to simultaneously monitor the inductor current
with an AC current probe. Don’t allow more than one
cycle of ringing after the initial step-response under- or
overshoot.
Input Capacitor Selection
The input capacitor must meet the ripple current
requirement (I
RMS
) imposed by the switching currents.
Nontantalum chemistries (ceramic, aluminum, or OS-
CON) are preferred due to their resistance to power-up
surge currents:
Power MOSFET Selection
Most of the following MOSFET guidelines focus on the
challenge of obtaining high load-current capability (>5A)
when using high-voltage (>20V) AC adapters. Low-cur-
rent applications usually require less attention.
For maximum efficiency, choose a high-side MOSFET
(Q1) that has conduction losses equal to the switching
losses at the optimum battery voltage (15V). Check to
ensure that the conduction losses at minimum input volt-
age don’t exceed the package thermal limits or violate
the overall thermal budget. Check to ensure that con-
duction losses plus switching losses at the maximum
II
V(V V)
V
RMS LOAD
OUT BATT OUT
BATT
=
f
f
where f
RC
ESR
ESR
ESR F
=
=
×× ×
π
π
1
2
V
CVLI
C
V
OUT OUT
2
PEAK
2
OUT
OUT
=
×+×
input voltage don’t exceed the package ratings or violate
the overall thermal budget.
Choose a low-side MOSFET (Q2) that has the lowest
possible R
DS(ON)
, comes in a moderate to small pack-
age (i.e., SO-8), and is reasonably priced. Ensure that
the MAX1710/MAX1711/MAX1712 DL gate driver can
drive Q2; in other words, check that the gate isn’t pulled
up by the high-side switch turning on due to parasitic
drain-to-gate capacitance, causing cross-conduction
problems. Switching losses aren’t an issue for the low-
side MOSFET since it’s a zero-voltage switched device
when used in the buck topology.
MOSFET Power Dissipation
Worst-case conduction losses occur at the duty factor
extremes. For the high-side MOSFET, the worst-case
power dissipation due to resistance occurs at minimum
battery voltage:
PD(Q1) = (V
OUT
/ V
BATT(MIN)
)
I
LOAD
2
R
DS(ON)
Generally, a small high-side MOSFET is desired in order
to reduce switching losses at high input voltages.
However, the R
DS(ON)
required to stay within package
power-dissipation limits often limits how small the MOS-
FET can be. Again, the optimum occurs when the switch-
ing (AC) losses equal the conduction (R
DS(ON)
) losses.
High-side switching losses don’t usually become an
issue until the input is greater than approximately 15V.
Switching losses in the high-side MOSFET can become
an insidious heat problem when maximum AC adapter
voltages are applied, due to the squared term in the
CV
2
F switching loss equation. If the high-side MOSFET
you’ve chosen for adequate R
DS(ON)
at low battery volt-
ages becomes extraordinarily hot when subjected to
V
BATT(MAX)
, you must reconsider your choice of MOS-
FET.
Calculating the power dissipation in Q1 due to switching
losses is difficult, since it must allow for difficult-to-quanti-
MAX1710/MAX1711/MAX1712
High-Speed, Digitally Adjusted
Step-Down Controllers for Notebook CPUs
20 ______________________________________________________________________________________
V+ V
CC
V
IN
= 7V TO 24V*
SHDN
SKIP
REF
DAC
INPUTS
ON/OFF
CC
0.22µF
470pF
DL
D0
LX
BST
5
DH
PGND
GND
FB
Q1
+5V
20
0.1µF
1µF
Q2
0.5µH
0.1µF
1nF
C1
1k
R1
C2 CPU
1.6V AT 7A
1k
1k
V
DD
FBS
GNDS
MAX1711
MAX1712
R2
C1 = 4 x 4.7µF/25V TAIYO YUDEN (TMK325BJ475K)
C2 = 6 x 47µF/10V TAIYO YUDEN (LMK550BJ476KM)
R1 + R2 = 5m MINIMUM OF PC BOARD TRACE RESISTANCE (TOTAL)
D1
D2
D3
D4
TON
*FOR HIGHER MINIMUM INPUT VOLTAGE,
*LESS OUTPUT CAPACITANCE IS REQUIRED.
Figure 7. All-Ceramic-Capacitor Application
TON
SETTING
(kHz)
APPROXIMATE
K-FACTOR
ERROR (%)
MIN V
BATT
AT V
OUT
= 2V
(V)
200 ±10 2.6
300 ±10 2.9
400 ±12.5 3.2
550 ±12.5 3.6
K
FACTOR
s-V)
5
3.3
2.5
1.8
Table 6. Approximate K-Factors Errors
fy factors that influence the turn-on and turn-off times.
These factors include the internal gate resistance, gate
charge, threshold voltage, source inductance, and PC
board layout characteristics. The following switching loss
calculation provides only a very rough estimate and is no
substitute for breadboard evaluation, preferably including
a sanity check using a thermocouple mounted on Q1:
where C
RSS
is the reverse transfer capacitance of Q1
and I
GATE
is the peak gate-drive source/sink current (1A
typ).
For the low-side MOSFET, Q2, the worst-case power dis-
sipation always occurs at maximum battery voltage:
PD(Q2) = (1 - V
OUT
/ V
BATT(MAX)
)
I
LOAD
2
R
DS(ON)
The absolute worst case for MOSFET power dissipation
occurs under heavy overloads that are greater than
I
LOAD(MAX)
but are not quite high enough to exceed the
current limit and cause the fault latch to trip. To protect
against this possibility, you must “overdesign” the circuit
to tolerate I
LOAD
= I
LIMIT(HIGH)
+ (LIR / 2)
I
LOAD(MAX)
,
where I
LIMIT(HIGH)
is the maximum valley current allowed
by the current-limit circuit, including threshold tolerance
and on-resistance variation. This means that the
MOSFETs must be very well heatsinked. If short-circuit
protection without overload protection is enough, a nor-
mal I
LOAD
value can be used for calculating component
stresses.
Choose a Schottky diode D1 having a forward voltage
low enough to prevent the Q2 MOSFET body diode from
turning on during the dead time. As a general rule, a
diode having a DC current rating equal to 1/3 of the load
current is sufficient. This diode is optional, and if efficien-
cy isn’t critical it can be removed.
Application Issues
Dropout Performance
The output voltage adjust range for continuous-conduc-
tion operation is restricted by the nonadjustable 500ns
(max) minimum off-time one-shot. For best dropout per-
formance, use the slowest (200kHz) on-time setting.
When working with low input voltages, the duty-factor
limit must be calculated using worst-case values for on-
and off-times. Manufacturing tolerances and internal
propagation delays introduce an error to the TON K-fac-
tor. This error is higher at higher frequencies (Table 6).
Also, keep in mind that transient response performance
of buck regulators operated close to dropout is poor,
and bulk output capacitance must often be added (see
V
SAG
equation in the Design Procedure).
Dropout Design Example: V
BATT
= 3V min, V
OUT
=
2V, f = 300kHz. The required duty is (V
OUT
+ V
SW
) /
(V
BATT
- V
SW
) = (2V + 0.1V) / (3.0V - 0.1V) = 72.4%. The
worst-case on-time is (V
OUT
+ 0.075) / V
BATT
K =
2.075V / 3V
3.35µs-V
90% = 2.08µs. The IC duty-fac-
tor limitation is:
which meets the required duty.
Remember to include inductor resistance and MOSFET
on-state voltage drops (V
SW
) when doing worst-case
dropout duty-factor calculations.
All-Ceramic-Capacitor Application
Ceramic capacitors have advantages and disadvan-
tages. They have ultra-low ESR, are noncombustible, are
relatively small, and are nonpolarized. On the other
hand, they’re expensive and brittle, and their ultra-low
ESR characteristic can result in excessively high ESR
zero frequencies (affecting stability). In addition, they
can cause output overshoot when going abruptly from
full-load to no-load conditions, unless there are some
bulk tantalum or electrolytic capacitors in parallel to
absorb the stored energy in the inductor. In some cases,
there may be no room for electrolytics, creating a need
for a DC-DC design that uses nothing but ceramics.
The all-ceramic-capacitor application of Figure 7 has the
same basic performance as the 7A Standard Application
Circuit, but replaces the tantalum output capacitors with
ceramics. This design relies on having a minimum of
5m parasitic PC board trace resistance in series with
the capacitor in order to reduce the ESR zero frequency.
This small amount of resistance is easily obtained by
locating the MAX1710/MAX1711/MAX1712 circuit 2 or 3
inches away from the CPU, and placing all the ceramic
capacitors close to the CPU. Resistance values higher
than 5m just improve the stability (which can be
observed by examining the load-transient response
characteristic as shown in the Typical Operating
Characteristics). Avoid adding excess PC board trace
resistance because there’s an efficiency penalty; 5m is
sufficient for the 7A circuit.
Output overshoot determines the minimum output
capacitance requirement. In this example, the switching
frequency has been increased to 550kHz and the induc-
tor value has been reduced to 0.5µH (compared to
300kHz and 2µH for the standard 7A circuit) in order to
DUTY
t
tt
sns
ON MIN
ON MIN OFF MAX
=
+
+ =
()
() ( )
. .%2 08 500 80 6
()
()
()
PD switching
CV fI
I
RSS BATT MAX LOAD
GATE
=
×××
2
MAX1710/MAX1711/MAX1712
High-Speed, Digitally Adjusted
Step-Down Controllers for Notebook CPUs
______________________________________________________________________________________ 21

MAX1712EEG

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LDO Voltage Controllers High-Speed, Digitally Adjusted Step-Down Controllers for Notebook CPUs
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