©2013 Silicon Storage Technology, Inc. DS-20005014B 11/2013
13
16 Mbit Multi-Purpose Flash Plus
SST39WF1601 / SST39WF1602
Data Sheet
5. With A
MS
-A
4
= 0; Sec ID is read with A
3
-A
0
,
SST ID is read with A
3
= 0 (Address range = 000000H to 000007H),
User ID is read with A
3
= 1 (Address range = 000008H to 00000FH).
User ID Lock Status is read with A
7
-A
0
= 0000FFH. Unlocked: DQ
3
= 1 / Locked: DQ
3
=0.
6. Valid Word-Addresses for Sec ID are from 000000H-000007H and 000008H to 00000FH.
7. The device does not remain in Software Product ID Mode if powered down.
8. With A
MS
-A
1
=0; SST Manufacturer ID = 00BFH, is read with A
0
=0,
SST39WF1601 Device ID = BF274BH, is read with A
0
=1,
SST39WF1602 Device ID = BF274AH, is read with A
0
=1.
A
MS
= Most significant address
A
MS
=A
19
for SST39WF1601/1602
9. Both Software ID Exit operations are equivalent
10. If users never lock after programming, Sec ID can be programmed over the previously unprogrammed bits (data=1)
using the Sec ID mode again (the programmed “0” bits cannot be reversed to “1”). Valid Word-Addresses for Sec ID are
from 000000H-000007H and 000008H to 00000FH.
Table 7: CFI Query Identification String
1
1. Refer to CFI publication 100 for more details.
Address Data Data
10H 0051H Query Unique ASCII string “QRY”
11H 0052H
12H 0059H
13H 0002H Primary OEM command set
14H 0000H
15H 0000H Address for Primary Extended Table
16H 0000H
17H 0000H Alternate OEM command set (00H = none exists)
18H 0000H
19H 0000H Address for Alternate OEM extended Table (00H = none exits)
1AH 0000H
T7.0 20005014
Table 8: System Interface Information
Address Data Data
1BH 0016H V
DD
Min (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
1CH 0020H V
DD
Max (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
1DH 0000H V
PP
min. (00H = no V
PP
pin)
1EH 0000H V
PP
max. (00H = no V
PP
pin)
1FH 0005H Typical time out for Word-Program 2
N
µs (2
5
=3s)
20H 0000H Typical time out for min. size buffer program 2
N
µs (00H = not supported)
21H 0005H Typical time out for individual Sector/Block-Erase 2
N
ms (2
5
=30ms)
22H 0007H Typical time out for Chip-Erase 2
N
ms (2
7
= 128 ms)
23H 0001H Maximum time out for Word-Program 2
N
times typical (2
1
x2
5
=6s)
24H 0000H Maximum time out for buffer program 2
N
times typical
25H 0001H Maximum time out for individual Sector/Block-Erase 2
N
times typical (2
1
x2
5
=64ms)
26H 0001H Maximum time out for Chip-Erase 2
N
times typical (2
1
x2
7
= 256 ms)
T8.0 20005014
©2013 Silicon Storage Technology, Inc. DS-20005014B 11/2013
14
16 Mbit Multi-Purpose Flash Plus
SST39WF1601 / SST39WF1602
Data Sheet
Table 9: Device Geometry Information
Address Data Data
27H 0015H Device size = 2
N
Bytes (15H = 21; 2
21
= 2 MByte)
28H 0001H Flash Device Interface description; 0001H = x16-only asynchronous interface
29H 0000H
2AH 0000H Maximum number of byte in multi-byte write = 2
N
(00H = not supported)
2BH 0000H
2CH 0002H Number of Erase Sector/Block sizes supported by device
2DH 00FFH Sector Information (y+1=Number of sectors; z x 256B = sector size)
2EH 0001H y = 511+1=512sectors (01FF = 511)
2FH 0010H
30H 0000H z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16)
31H 001FH Block Information (y+1=Number of blocks; z x 256B = block size)
32H 0000H y = 31+1=32blocks(001F = 31)
33H 0000H
34H 0001H z = 256 x 256 Bytes = 64 KByte/block (0100H = 256)
T9.0 20005014
©2013 Silicon Storage Technology, Inc. DS-20005014B 11/2013
15
16 Mbit Multi-Purpose Flash Plus
SST39WF1601 / SST39WF1602
Data Sheet
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Temperature Under Bias .............................................. -55°C to +125°C
Storage Temperature ................................................ -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential .............................-0.5V to V
DD
+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential ..................-2.0V to V
DD
+2.0V
Voltage on A
9
Pin to Ground Potential .....................................-0.5V to 13.2V
Package Power Dissipation Capability (T
A
= 25°C) ................................... 1.0W
Surface Mount Solder Reflow Temperature ............................ 260°C for 10 seconds
Output Short Circuit Current
1
.................................................. 50mA
1. Outputs shorted for no more than one second. No more than one output shorted at a time.
Table 10: Operating Range
Range Ambient Temp V
DD
Commercial 0°C to +70°C 1.65-1.95V
Industrial -40°C to +85°C 1.65-1.95V
T10.1 20005014
Table 11: AC Conditions of Test
1
1. See Figures 18 and 19
Input Rise/Fall Time Output Load
5ns C
L
=30pF
T11.1 20005014

SST39WF1601-70-4I-MAQE-T

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash 1.65V to 1.95V 16Mbit Multi-Prps Fl
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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