©2013 Silicon Storage Technology, Inc. DS-20005014B 11/2013
16
16 Mbit Multi-Purpose Flash Plus
SST39WF1601 / SST39WF1602
Data Sheet
Table 12: DC Operating Characteristics V
DD
= 1.65-1.95V
1
Symbol Parameter
Limits
Test ConditionsMin Max Units
I
DD
Power Supply Current Address input=V
ILT
/V
IHT,
at f=5 MHz,
V
DD
=V
DD
Max
Read 10 mA CE#=V
IL
, OE#=WE#=V
IH
, all I/Os
open
Program and Erase 25 mA CE#=WE#=V
IL
, OE#=V
IH
I
SB
Standby V
DD
Current
2
40 µA CE#=V
IHC
,V
DD
=V
DD
Max
I
ALP
Auto Low Power 40 µA CE#=V
ILC
,V
DD
=V
DD
Max
All inputs=V
SS
or V
DD,
WE#=V
IHC
I
LI
Input Leakage Current 1 µA V
IN
=GND to V
DD
,V
DD
=V
DD
Max
I
LIW
Input Leakage Current
on WP# pin and RST#
10 µA WP#=GND to V
DD
or RST#=GND to
V
DD
I
LO
Output Leakage Current 1 µA V
OUT
=GND to V
DD
,V
DD
=V
DD
Max
V
IL
Input Low Voltage 0.2V
DD
VV
DD
=V
DD
Min
V
IH
Input High Voltage 0.8V
DD
VV
DD
=V
DD
Max
V
OL
Output Low Voltage 0.1 V I
OL
=100 µA, V
DD
=V
DD
Min
V
OH
Output High Voltage V
DD
-0.1 V I
OH
=-100 µA, V
DD
=V
DD
Min
T12.0 20005014
1. Typical conditions for the Active Current shown on the front page of the data sheet are average values at 25°C
(room temperature), and V
DD
= 1.8V. Not 100% tested.
2. For all SST39WF160x commercial and industrial devices, I
SB
typical is under 5 µA.
Table 13: Recommended System Power-up Timings
Symbol Parameter Minimum Units
T
PU-READ
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Power-up to Read Operation 100 µs
T
PU-WRITE
1
Power-up to Program/Erase Operation 100 µs
T13.0 20005014
Table 14: Capacitance (T
A
= 25°C, f=1 Mhz, other pins open)
Parameter Description Test Condition Maximum
C
I/O
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
I/O Pin Capacitance V
I/O
=0V 12pF
C
IN
1
Input Capacitance V
IN
=0V 6pF
T14.0 20005014
Table 15: Reliability Characteristics
Symbol Parameter Minimum Specification Units Test Method
N
END
1,2
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
2. N
END
endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would
result in a higher minimum specification.
Endurance 10,000 Cycles JEDEC Standard A117
T
DR
1
Data Retention 100 Years JEDEC Standard A103
I
LTH
1
Latch Up 100 + I
DD
mA JEDEC Standard 78
T15.0 20005014
