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M24C64-FMB6TG

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P39P40-P42P43-P44
M24C64-DF, M24C64-W, M24C64-R, M24C64-F DC and AC parameters
Doc ID 16891 Rev 26 25/44
Note: This parameter is not tested but established by characterization and qualification. For
endurance estimates in a specific application, please refer to AN2014.
Table 11. Input parameters
Symbol Parameter
(1)
1. Characterized value, not tested in production.
Test condition Min. Max. Unit
C
IN
Input capacitance (SDA) 8 pF
C
IN
Input capacitance (other pins) 6 pF
Z
L
(2)
2. E2,E1,E0: Input impedance when the memory is selected (after a Start condition).
Input impedance
(E2, E1, E0, WC)
V
IN
< 0.3V
CC
30 kΩ
Z
H
(2)
Input impedance
(E2, E1, E0, WC)
V
IN
> 0.7V
CC
500 kΩ
Table 12. Memory cell characteristics
Symbol Parameter Test condition Min. Max. Unit
N
cycle
Endurance TA = 25°C, 1.8 V < V
cc
< 5.5 V 1,000,000 - Write cycle
DC and AC parameters M24C64-DF, M24C64-W, M24C64-R, M24C64-F
26/44 Doc ID 16891 Rev 26
Table 13. DC characteristics (M24xxx-W, device grade 6)
Symbol Parameter
Test conditions (see Ta ble 7 and
Table 10)
Min. Max. Unit
I
LI
Input leakage current
(SCL, SDA, E2, E1,
E0)
V
IN
= V
SS
or
V
CC
device in Standby mode
± 2 µA
I
LO
Output leakage
current
SDA in Hi-Z, external voltage applied
on SDA: V
SS
or
V
CC
± 2 µA
I
CC
Supply current (Read)
2.5 V < V
CC
< 5.5 V, f
c
= 400 kHz
(rise/fall time < 50 ns)
2mA
2.5 V < V
CC
< 5.5 V, f
c
= 1 MHz
(1)
(rise/fall time < 50 ns)
1. Only for devices operating at f
C
max = 1 MHz (see Table 18)
2.5 mA
I
CC0
Supply current (Write) During t
W
, 2.5 V < V
CC
< 5.5 V 5
(2)
2. Characterized value, not tested in production.
mA
I
CC1
Standby supply
current
Device not selected
(3)
, V
IN
= V
SS
or
V
CC
, V
CC
= 2.5 V
3. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
completion of the internal write cycle t
W
(t
W
is triggered by the correct decoding of a Write instruction).
2µA
Device not selected
(3)
, V
IN
= V
SS
or
V
CC
, V
CC
= 5.5 V
5
(4)
4. The new M24C64-W devices (identified by the process letter K) offer I
CC1
= 3µA (max)
µA
V
IL
Input low voltage
(SCL, SDA, WC)
–0.45 0.3V
CC
V
V
IH
Input high voltage
(SCL, SDA)
0.7V
CC
6.5
V
Input high voltage
(WC, E2, E1, E0)
0.7V
CC
V
CC
+0.6
V
OL
Output low voltage
I
OL
= 2.1 mA, V
CC
= 2.5 V or
I
OL
= 3 mA, V
CC
= 5.5 V
0.4 V
M24C64-DF, M24C64-W, M24C64-R, M24C64-F DC and AC parameters
Doc ID 16891 Rev 26 27/44
Table 14. DC characteristics (M24xxx-W - device grade 3)
Symbol Parameter
Test conditions (in addition to those
in Ta b le 7 and Tabl e 1 0)
Min. Max. Unit
I
LI
Input leakage current
(SCL, SDA, E2, E1,
E0)
V
IN
= V
SS
or
V
CC
device in Standby mode
± 2 µA
I
LO
Output leakage
current
SDA in Hi-Z, external voltage applied
on SDA: V
SS
or
V
CC
± 2 µA
I
CC
Supply current (Read) f
c
= 400 kHz 2 mA
I
CC0
Supply current (Write) During t
W
5
(1)
1. Characterized value, not tested in production.
mA
I
CC1
Standby supply
current
Device not selected
(2)
, V
IN
= V
SS
or
V
CC
2. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
completion of the internal write cycle t
W
(t
W
is triggered by the correct decoding of a Write instruction).
10 µA
V
IL
Input low voltage
(SCL, SDA, WC)
–0.45 0.3V
CC
V
V
IH
Input high voltage
(SCL, SDA)
0.7V
CC
6.5 V
Input high voltage
(WC, E2, E1, E0)
0.7V
CC
V
CC
+0.6
V
V
OL
Output low voltage
I
OL
= 2.1 mA, V
CC
= 2.5 V or
I
OL
= 3 mA, V
CC
= 5.5 V
0.4 V
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P39P40-P42P43-P44

M24C64-FMB6TG

Mfr. #:
Buy M24C64-FMB6TG
Manufacturer:
STMicroelectronics
Description:
EEPROM 128 Kbit 64 Kbit 1.7 V to 5.5 V
Lifecycle:
New from this manufacturer.
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