DC and AC parameters M24C64-DF, M24C64-W, M24C64-R, M24C64-F
28/44 Doc ID 16891 Rev 26
Table 15. DC characteristics (M24xxx-R - device grade 6)
Symbol Parameter
Test conditions
(1)
(in addition
to those in Tabl e 8 and
Table 10)
1. If the application uses the voltage range R device with 2.5 V < V
cc
< 5.5 V and -40 °C < TA < +85 °C,
please refer to Table 13 instead of this table.
Min. Max. Unit
I
LI
Input leakage current
(E1, E2, SCL, SDA)
V
IN
= V
SS
or
V
CC
device in Standby mode
± 2 µA
I
LO
Output leakage current
SDA in Hi-Z, external voltage
applied on SDA: V
SS
or
V
CC
± 2 µA
I
CC
Supply current (Read)
V
CC
= 1.8 V, f
c
= 400 kHz 0.8 mA
f
c
= 1 MHz
(2)
2. Only for devices operating at f
C
max = 1 MHz (see Table 18).
2.5 mA
I
CC0
Supply current (Write) During t
W
, 1.8 V < V
CC
< 2.5 V 3
(3)
3. Characterized value, not tested in production.
mA
I
CC1
Standby supply current
Device not selected
(4)
,
V
IN
= V
SS
or
V
CC
, V
CC
= 1.8 V
4. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
completion of the internal write cycle t
W
(t
W
is triggered by the correct decoding of a Write instruction).
A
V
IL
Input low voltage
(SCL, SDA, WC)
1.8 V V
CC
< 2.5 V –0.45 0.25 V
CC
V
V
IH
Input high voltage
(SCL, SDA)
1.8 V V
CC
< 2.5 V 0.75V
CC
6.5 V
Input high voltage
(WC, E2, E1, E0)
1.8 V V
CC
< 2.5 V 0.75V
CC
V
CC
+0.6 V
V
OL
Output low voltage I
OL
= 1 mA, V
CC
= 1.8 V 0.2 V
M24C64-DF, M24C64-W, M24C64-R, M24C64-F DC and AC parameters
Doc ID 16891 Rev 26 29/44
Table 16. DC characteristics (M24xxx-F)
Symbol Parameter
Test conditions
(1)
(in addition
to those in Tab l e 9 and
Tab l e 10 )
1. If the application uses the voltage range F device with 2.5 V < Vcc < 5.5 V and -40 °C < TA < +85 °C,
please refer to Table 13 instead of this table.
Min. Max.
Unit
I
LI
Input leakage current
(E1, E2, SCL, SDA)
V
IN
= V
SS
or
V
CC
device in Standby mode
± 2 µA
I
LO
Output leakage current
SDA in Hi-Z, external voltage
applied on SDA: V
SS
or
V
CC
± 2 µA
I
CC
Supply current (Read)
V
CC
= 1.7 V, f
c
= 400 kHz 0.8 mA
f
c
= 1 MHz
(2)
2. Only for devices operating at f
C
max = 1 MHz (see Table 18).
2.5 mA
I
CC0
Supply current (Write) During t
W
, 1.7 V < V
CC
< 2.5 V 3
(3)
3. Characterized value, not tested in production.
mA
I
CC1
Standby supply current
Device not selected
(4)
,
V
IN
= V
SS
or
V
CC
, V
CC
= 1.7 V
4. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
completion of the internal write cycle t
W
(t
W
is triggered by the correct decoding of a Write instruction).
A
V
IL
Input low voltage
(SCL, SDA, WC)
1.7 V V
CC
< 2.5 V –0.45 0.25 V
CC
V
V
IH
Input high voltage
(SCL, SDA)
1.7 V V
CC
< 2.5 V 0.75V
CC
6.5 V
Input high voltage
(WC, E2, E1, E0)
1.7 V V
CC
< 2.5 V 0.75V
CC
V
CC
+0.6 V
V
OL
Output low voltage I
OL
= 1 mA, V
CC
= 1.7 V 0.2 V
DC and AC parameters M24C64-DF, M24C64-W, M24C64-R, M24C64-F
30/44 Doc ID 16891 Rev 26
Table 17. 400 kHz AC characteristics
Symbol Alt. Parameter
(1)
1. Test conditions (in addition to those in Table 7, Table 8, Ta ble 9 and Table 10).
Min. Max. Unit
f
C
f
SCL
Clock frequency - 400 kHz
t
CHCL
t
HIGH
Clock pulse width high 600 - ns
t
CLCH
t
LOW
Clock pulse width low 1300 ns
t
QL1QL2
(2)
2. Characterized value, not tested in production.
t
F
SDA (out) fall time 20
(3)
3. With C
L
= 10 pF.
120 ns
t
XH1XH2
t
R
Input signal rise time
(4)
4. There is no min. or max. values for the input signal rise and fall times. It is however recommended by the
I²C specification that the input signal rise and fall times be more than 20 ns and less than 300 ns when
f
C
< 400 kHz.
(4)
ns
t
XL1XL2
t
F
Input signal fall time
(4) (4)
ns
t
DXCX
t
SU:DAT
Data in set up time 100 - ns
t
CLDX
t
HD:DAT
Data in hold time 0 - ns
t
CLQX
t
DH
Data out hold time 100
(5)
5. The new M24C64 device (identified by the process letter K) offers t
CLQX
= 100 ns (min) and t
CLQV
= 100 ns
(min), while the current device offers t
CLQX
= 200 ns (min) and t
CLQV
= 200 ns (min). Both series offer a
safe margin compared to the I
2
C specification which recommends t
CLQV
= 0 ns (min).
-ns
t
CLQV
(6)(7)
6. To avoid spurious Start and Stop conditions, a minimum delay is placed between SCL=1 and the falling or
rising edge of SDA.
7. t
CLQV
is the time (from the falling edge of SCL) required by the SDA bus line to reach either 0.3 V
CC
or
0.7 V
CC
, assuming that R
bus
× C
bus
time constant is within the values specified in Figure 5.
t
AA
Clock low to next data valid (access time) 100
(5)
900 ns
t
CHDL
t
SU:STA
Start condition setup time 600 - ns
t
DLCL
t
HD:STA
Start condition hold time 600 - ns
t
CHDH
t
SU:STO
Stop condition set up time 600 - ns
t
DHDL
t
BUF
Time between Stop condition and next Start
condition
1300 - ns
t
WLDL
(8)(2)
8. WC=0 set up time condition to enable the execution of a WRITE command.
t
SU:WC
WC set up time (before the Start condition) 0 - µs
t
DHWH
(9)(2)
9. WC=0 hold time condition to enable the execution of a WRITE command.
t
HD:WC
WC hold time (after the Stop condition) 1 - µs
t
W
t
WR
Write time - 5 ms
t
NS
(2)
Pulse width ignored (input filter on SCL and
SDA) - single glitch
-80
(10)
10. The current M24C64 device offers t
NS
=100 ns (max), the new M24C64 device (identified by the process
letter K) offers t
NS
=80 ns (max). Both products offer a safe margin compared to the 50 ns minimum value
recommended by the I
2
C specification.
ns

M24C64-FMB6TG

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
EEPROM 128 Kbit 64 Kbit 1.7 V to 5.5 V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet