Symbol Parameter Condition Min Max Unit
V
OL
Low-level output voltage I
OL
= 1.6 mA
(7)
— 0.4 V
I
I
Input leakage current V
I
=V
CC
or GND -10 10 µA
I
OZ
Tri-state output off-state
current
V
O
= V
CC
or GND -10 10 µA
1.3.4. ICC Supply Current
Table 5. I
CC
Supply Current
Symbol Parameter Condition Min Max Unit
I
CC0
V
CC
supply current Standby — 100 µA
I
CC1
V
CC
supply current for all
devices except EPCQ512/A
During active power mode 5 20 mA
V
CC
supply current for
EPCQ512/A
— 60 mA
1.3.5. Capacitance
Table 6. Capacitance
Capacitance is sample-tested only at T
A
= 25 x C and at a 54 MHz frequency.
Symbol Parameter Condition Min Max Unit
C
IN
Input pin capacitance V
IN
=0 V — 6 pF
C
OUT
Output pin capacitance V
OUT
=0 V — 8 pF
1.4. Memory Array Organization
Table 7. Supported Memory Array Organization in EPCQ Devices
Details EPCQ16 EPCQ32 EPCQ64 EPCQ128 EPCQ256 EPCQ512/A
Bytes 2,097,152
bytes [16
megabits
(Mb)]
4,194,304
bytes (32
Mb)
8,388,608
bytes (64
Mb)
16,777,216
bytes (128
Mb)
33,554,432
bytes (256
Mb)
67,108,864
bytes (512
Mb)
Number of sectors 32 64 128 256 512 1,024
Bytes per sector 65,536 bytes [512 kilobits (Kb)]
Total numbers of subsectors
(8)
512 1,024 2,048 4,096 8,192 16,384
Bytes per subsector 4,096 bytes (32 Kb)
continued...
(7)
The I
OL
parameter refers to the low-level TTL or CMOS output current.
(8)
Every sector is further divided into 16 subsectors with 4 KB of memory. Therefore, there are
512 (32 x 16) subsectors for the EPCQ16 device, 1,024 (64 x 16) subsectors for the EPCQ32
device, 2,048 (128 x 16) subsectors for the EPCQ64 device, 4,096 (256 x 16) subsectors for
the EPCQ128 device, 8,192 (512 x 16) subsectors for the EPCQ256 device, and 16,384
(1,024 x 16) subsectors for the EPCQ512/A device.
1. Quad-Serial Configuration (EPCQ) Devices Datasheet
CF52012 | 2018.06.01
Quad-Serial Configuration (EPCQ) Devices Datasheet
7
