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NCP1855FCCT1G

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P26
NCP1855
www.onsemi.com
4
Table 2. MAXIMUM RATINGS
Rating Symbol Value Unit
IN (Note 1) V
IN
−0.3 to +28 V
CAP (Note 1) V
CAP
−0.3 to +28 V
Power balls: SW, CBOOT (Note 1) V
PWR
−0.3 to +24 V
IN pin with respect to VCAP V
IN_CAP
−0.3 to +7.0 V
SW with respect to SW V
SW_CAP
−0.3 to +7.0 V
Sense/Control balls: SENSP, SENSN, VBAT, FET, TRANS, CORE,
FLAG, INTB and WEAK. (Note 1)
V
CTRL
−0.3 to +7.0 V
Digital Input: SCL, SDA, SPM, OTG, ILIM, FTRY (Note 1)
Input Voltage
Input Current
V
DG
I
DG
−0.3 to +7.0 V
20
V
mA
Storage Temperature Range T
STG
−65 to +150 °C
Maximum Junction Temperature (Note 4) T
J
−40 to +TSD °C
Moisture Sensitivity (Note 5) MSL Level 1
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 3. OPERATING CONDITIONS
Symbol Parameter Conditions Min Typ Max Unit
V
IN
Operational Power Supply 3.6 V
INOV
V
V
DG
Digital input voltage level 0 5.5 V
T
A
Ambient Temperature Range −40 25 +85 °C
I
SINK
FLAG sink current 10 mA
C
IN
Decoupling input capacitor 1
mF
C
CAP
Decoupling Switcher capacitor 4.7
mF
C
CORE
Decoupling core supply capacitor 2.2
mF
C
OUT
Decoupling system capacitor 22
mF
L
X
Switcher Inductor 2.2
mH
R
SNS
Current sense resistor 33
mW
R
q
JA
Thermal Resistance Junction to Air (Notes 4 and 6) 70 °C/W
T
J
Junction Temperature Range −40 25 +125 °C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
1. With Respect to PGND. According to JEDEC standard JESD22−A108.
2. This device series contains ESD protection and passes the following tests:
Human Body Model (HBM) ±2.0 kV per JEDEC standard: JESD22−A114 for all pins.
Machine Model (MM) ±200 V per JEDEC standard: JESD22−A115 for all pins.
3. Latch up Current Maximum Rating: ±100 mA or per ±10 mA JEDEC standard: JESD78 class II.
4. A thermal shutdown protection avoids irreversible damage on the device due to power dissipation. See Electrical Characteristics.
5. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020.
6. The R
q
JA
is dependent on the PCB heat dissipation. Board used to drive this data was a 2s2p JEDEC PCB standard.
NCP1855
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Table 4. ELECTRICAL CHARACTERISTICS
Min & Max Limits apply for T
A
between −40°C to +85°C and T
J
up to +125°C for V
IN
between 3.9 V to 7 V (Unless otherwise noted).
Typical values are referenced to T
A
= + 25°C and V
IN
= 5 V (Unless otherwise noted).
Symbol
Parameter Conditions Min Typ Max Unit
INPUT VOLTAGE
V
INDET
Valid input detection threshold
V
IN
rising 3.8 3.85 3.9 V
V
IN
falling 3.55 3.6 3.65 V
V
BUSUV
USB under voltage detection
V
IN
falling 4.3 4.4 4.5 V
Hysteresis 50 100 150 mV
V
BUSOV
USB over voltage detection
V
IN
rising 5.55 5.65 5.75 V
Hysteresis 25 75 125 mV
V
INOV
Valid input high threshold
V
IN
rising 15.5 15.75 16 V
Hysteresis 125 375 600 mV
INPUT CURRENT LIMITING
I
INLIM
Input current limit V
IN
= 5 V
Maximum Current range 100 2000 mA
Default value 70 85 100 mA
Accuracy
from 500 mA to 2000 mA
−15 0 %
I
2
C Programmable granularity
(From 500 mA to 2000 mA)
100 mA
INPUT SUPPLY CURRENT
I
Q_SW
VBUS supply current
No load, Charger active state 15 mA
I
OFF
Charger not active 500
mA
CHARGER DETECTION
V
CHGDET
Charger detection threshold
voltage
V
IN
– V
SENSN
, V
IN
rising 50 110 180 mV
V
IN
– V
SENSN
, V
IN
falling 20 30 50 mV
REVERSE BLOCKING CURRENT
I
LEAK
V
BAT
leakage current Battery leakage, V
BAT
= 4.2 V, V
IN
= 0 V,
SDA = SCL = 0 V
5
mA
R
RBFET
Input RBFET On resistance (Q1) Charger active state, Measured between
IN and CAP, V
IN
= 5 V
− 45 75
mW
BATTERY AND SYSTEM VOLTAGE REGULATION
V
CHG
Output voltage range
Programmable by I
2
C 3.3 4.5 V
Default value 3.6 V
Voltage regulation accuracy
Constant voltage mode, T
A
= 25°C −0.5 0.5 %
−1 1 %
I
2
C Programmable granularity 25 mV
BATTERY VOLTAGE THRESHOLD
V
SAFE
Safe charge threshold voltage V
BAT
rising 2.1 2.15 2.2 V
V
PRE
Conditioning charge threshold
voltage
V
BAT
rising 2.75 2.8 2.85 V
V
FET
End of weak charge threshold
voltage
V
BAT
rising
Voltage range 3.1 3.6 V
Default value 3.4
Accuracy −2 2 %
I
2
C Programmable granularity 100 mV
V
RECHG
Recharge threshold voltage Relative to V
CHG
setting register 97 %
NCP1855
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6
Table 4. ELECTRICAL CHARACTERISTICS
Min & Max Limits apply for T
A
between −40°C to +85°C and T
J
up to +125°C for V
IN
between 3.9 V to 7 V (Unless otherwise noted).
Typical values are referenced to T
A
= + 25°C and V
IN
= 5 V (Unless otherwise noted).
Symbol UnitMaxTypMinConditionsParameter
BATTERY VOLTAGE THRESHOLD
V
BUCKOV
Overvoltage threshold voltage
V
BAT
rising, relative to V
CHG
setting register, measured
on SENSN or SENSP, Q
BAT
close or no Q
BAT
115 %
Q
BAT
open. 5 V
CHARGE CURRENT REGULATION
I
CHG
Charge current range
Programmable by I
2
C 450 2500 mA
Default value 950 1000 1050 mA
Charge current accuracy −50 50 mA
I
2
C Programmable granularity 100 mA
I
PRE
Pre−charge current V
BAT
< V
PRE
400 450 500 mA
I
SAFE
Safe charge current V
BAT
< V
SAFE
30 40 50 mA
I
WEAK
Weak battery charge current BATFET present
,
V
SAFE
< V
BAT
<
V
FET
IWEAK[1:0] = 01 80 100 120
mA
IWEAK[1:0] = 10 180 200 220
IWEAK[1:0] = 11 270 300 330
CHARGE TERMINATION
I
EOC
Charge current termination V
BAT
≥ V
RECHG
Current range 100 275
mA
Default value 150
Accuracy, I
EOC
< 200 mA −25 25
I
2
C Programmable granularity 25
FLAG
V
FOL
FLAG output low voltage I
FLAG
= 10 mA 0.5 V
I
FLEAK
Off−state leakage V
FLAG
= 5 V 1
mA
T
FLGON
Interrupt request pulse duration Single event 150 200 250
ms
DIGITAL INPUT (V
DG
)
V
IH
High−level input voltage 1.2 V
V
IL
Low−level input voltage 0.4 V
R
DG
Pull up resistor (FRTY pin)
250
kW
Pull down resistor (others pin)
I
DLEAK
Input current V
DG
= 0 V −0.5 0.5
mA
I
2
C
V
SYSUV
CAP pin supply voltage I
2
C registers available 2.5 V
V
I
2
CINT
High level at SCL/SCA line 1.7 5 V
V
I
2
CIL
SCL, SDA low input voltage 0.4 V
V
I
2
CIH
SCL, SDA high input voltage 0.8*
V
I
2
CINT
V
V
I
2
COL
SCL, SDA low output voltage I
SINK
= 3 mA 0.3 V
F
SCL
I
2
C clock frequency 3.4 MHz
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P26

NCP1855FCCT1G

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Buy NCP1855FCCT1G
Manufacturer:
ON Semiconductor
Description:
Battery Management 2.5A SWITCHING BATTERY CH
Lifecycle:
New from this manufacturer.
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