NCP1855
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7
Table 4. ELECTRICAL CHARACTERISTICS
Min & Max Limits apply for T
A
between −40°C to +85°C and T
J
up to +125°C for V
IN
between 3.9 V to 7 V (Unless otherwise noted).
Typical values are referenced to T
A
= + 25°C and V
IN
= 5 V (Unless otherwise noted).
Symbol UnitMaxTypMinConditionsParameter
JUNCTION THERMAL MANAGEMENT
T
SD
Thermal shutdown
Rising 125 140 150 °C
Falling 115 °C
T
H2
Hot temp threshold 2 Relative to T
SD
−7 °C
T
H1
Hot temp threshold 1 Relative to T
SD
−11 °C
T
WARN
Thermal warning Relative to T
SD
−15 °C
BUCK CONVERTER
F
SWCHG
Switching Frequency 1.5 MHz
Switching Frequency Accuracy −10 +10 %
T
DTYC
Max Duty Cycle Average 99.5 %
I
PKMAX
Maximum peak inductor current 3 A
R
ONLS
Low side Buck MOSFET
R
DSON
(Q3)
Measured between PGND and SW, V
IN
= 5 V 70 110
mW
R
ONHS
High side Buck MOSFET
R
DSON
(Q2)
Measured between CAP and SW, V
IN
= 5 V 55 85
mW
PROTECTED TRANSCEIVER SUPPLY
V
TRANS
Voltage on TRANS pin V
IN
5 V 5 5.5 V
I
TRMAX
TRANS current capability 50 mA
I
TROCP
Short circuit protection 150 mA
TIMING
T
WD
Watchdog timer 32 s
T
USB
USB timer 2048 s
T
CHG1
Charge timer
Safe−charge or pre−charge or weak−safe or
weak−charge state.
3 h
T
CHG2
CC state 1 h
CV state
TIMER_SEL = 0 (default) 2 h
TIMER_SEL = 1 1 h
T
WU
Wake−up timer 64 s
T
ST
Charger state timer,
Minimum transition time from
states to states
From Weak−Charge to Full−Charge State 32 s
From wait−state to safe−charge and from
weak−wait to weak−safe
127 ms
All others state 16 ms
T
VRCHR
Deglitch time for end of charge
voltage detection
V
BAT
rising 15 ms
V
BAT
falling 127 ms
T
INDET
Deglitch time for input voltage
detection
V
IN
rising 15 ms
T
DGS1
Deglitch time for signal
crossing I
EOC
, V
PRE
, V
SAFE
,
V
CHGDET
thresholds
Rising and falling edge 15 ms
T
DGS2
Deglitch time for signal
crossing V
FET
, V
BUSUV
,
V
BUSOV
thresholds
Rising and falling edge 1 ms
NCP1855
www.onsemi.com
8
Table 4. ELECTRICAL CHARACTERISTICS
Min & Max Limits apply for T
A
between −40°C to +85°C and T
J
up to +125°C for V
IN
between 3.9 V to 7 V (Unless otherwise noted).
Typical values are referenced to T
A
= + 25°C and V
IN
= 5 V (Unless otherwise noted).
Symbol UnitMaxTypMinConditionsParameter
BOOST CONVERTER AND OTG MODE
V
IBSTL
Boost minimum input
operating range
Boost start−up 3.1 3.2 3.3 V
Boost running 2.9 3 3.1 V
V
IBSTH
Boost maximum input
operating range
4.4 4.5 4.6 V
V
OBST
Boost Output Voltage DC value measured on CAP pin, no load 5.00 5.1 5.15 V
V
OBSTAC
Boost Output Voltage accuracy Measured on CAP pin Including line and load
regulation
−3 3 %
I
BSTMX
Output current capability
Configured Mode 1000 mA
Un−configured Mode 150 mA
F
SWBST
Switching Frequency 1.35 1.5 1.65 MHz
I
BPKM
Maximum peak inductor current 2.5 A
V
OBSTOL1
Boost overload
Voltage on CAP pin, falling 4.5 4.6 4.65
V
V
OBSTOL2
Un−configured Mode, falling, Voltage on IN pin 4.3 4.4 4.5
T
OBSTOL
Boost start−up time From OTG enable to VIN > V
OBSTOL
32 ms
I
BSTPRE
Boost Pre−charge current
Un−configured Mode, Measured on IN pin
RLOAD = 29 W, CLOAD = 10 mF
350 mA
Configured Mode, Measured on IN pin
RLOAD = 5.1 W, CLOAD = 10 mF
1.1 A
T
BSTPRE
Boost Rise time Configured Mode
,
Measured on
VIN, VIN rising
(see Figure 3)
RLOAD = ,
CLOAD = 1 mF
0.3 4 ms
RLOAD = 5.1 W,
CLOAD = 10 mF
V
OBSTOV
Overvoltage protection
V
IN
rising 5.55 5.65 5.75 V
Hysteresis 25 75 125 mV
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Figure 3. Boost Test Schematic
90%
10%
CLOADRLOAD
VIN
V
IN
T
BSTPRE
NCP1855
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9
BLOCK DIAGRAM
Figure 4. Block Diagram
CBOOT
SW
IN
CAP
Charge
Pump
PGND
5V
reference
CORE
V
SAFE
V
PRE
V
FET
V
RECHG
V
BATOV
Current,
Voltage,
and Clock
Reference
V
REG
V
BAT
V
IN
PWM generator
BAT
FET
WEAK
SENSN
SENSP
+
+
+
I2C &
DIGITAL
CONTROLER
TRANS
SCL
SDA
ILIM1
OTG
SPM
V
TJ
T
SD
T
H2
T
H1
T
WARN
AGND
FLAG
I
CHG
I
INLIM
I
INREG
I
BUCKREG
V
BUCKREG
V
CORE
V
TJ
+
+
+
+
+
+
+
+
+
+
Q1
Q2
Q3
Amp
Amp
Amp
Drv
+
Drv
I
INREG
Amp
+
I
BUCKREG
V
BUCKREG
V
CHG
+
BATFET detection
& Drive
V
INOVLO
+
V
CAP
+
I
BAT
I
EOC
I
BAT
V
CORE
V
CORE
V
CORE
V
CAP
ILIM2
C
BOOT
10nF
C
IN
C
CAP
C
CORE
4.7
μF
2.2
μF
1
μF
USB PHY
C
TRS
0.1
μF
+
R
SNS
L
X
2.2
μF
33mW
VBUS
D+
D−
GND
Q
BAT
(*)
V
BUSUV
V
BUSOV
V
INDET
V
INOV
V
CHGDET
V
BAT
+
+
+
+
+
+
FTRY
V
CORE
Drv

NCP1855FCCT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Battery Management 2.5A SWITCHING BATTERY CH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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