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MT4VDDT864AG-26AB1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P28
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
pdf: 09005aef8085081a, source: 09005aef806e129d
DD4C8_16_32x64AG.fm - Rev. B 9/04 EN
1 ©2004 Micron Technology, Inc.
64MB, 128MB, 256MB (x64, SR)
184-PIN DDR SDRAM UDIMM
DDR SDRAM
DIMM
MT4VDDT864A – 64MB
MT4VDDT1664A – 128MB
MT4VDDT3264A – 256MB
For the latest data sheet, please refer to the Micron
Web
site: www.micron.com/products/modules
Features
• JEDEC standard 184-pin, unbuffered dual in-line
memory module (DDR DIMM)
• Utilizes 266 MT/s and 333MT/s DDR SDRAM
components
• Fast data transfer rates: PC2100 or PC2700
• 64MB (8 Meg x 64), 128MB (16 Meg x 64), and
256MB (32 Meg x 64)
•V
DD= VDDQ= +2.5V
•V
DDSPD = +2.3V to +3.6V
• 2.5V I/O (SSTL_2 compatible)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Bidirectional data strobe (DQS) transmitted/
received with data—i.e., source-synchronous data
capture
• Differential clock inputs (CK and CK#)
• Four internal device banks for concurrent operation
• Selectable burst lengths: 2, 4, or 8
• Auto precharge option
• Auto Refresh and Self Refresh Modes: 15.625µs
(64MB); 7.8125µs (128MB, 256MB) maximum
average periodic refresh interval.
• Serial Presence Detect (SPD) with EEPROM
• Selectable READ CAS latency for maximum
compatibility
•Gold edge contacts
Figure 1: 184-Pin DIMM (MO–206)
NOTE: 1. Consult Micron for product availability.
2. CL = Device CAS (READ) Latency.
OPTIONS MARKING
• Operating Temperature Range
Commercial (0°C to +70°C) None
Industrial (-40°C to +85°C)
1
I
•Package
184-pin DIMM (Standard) G
184-Pin DIMM (Lead-free)
1
Y
• Memory Clock, Speed, CAS Latency
2
6ns, 333 MT/s (167 MHz), CL = 2.5 -335
7.5ns, 266 MT/s (133 MHz), CL = 2 -262
1
7.5ns, 266 MT/s (133 MHz), CL = 2 -26A
1
7.5ns, 266 MT/s (133 MHz), CL = 2.5
-265
•PCB
1.25in. (31.75mm) See page 2 note
Table 1: Address Table
64MB 128MB 256MB
Refresh Count
4K 8K 8K
Row Addressing
4K (A0–A11) 8K(A0–A12) 8K(A0–A12)
Device Bank Addressing
4 (BA0, BA1) 4 (BA0, BA1) 4 (BA0, BA1)
Device Configuration
128Mb (8 Meg x 16) 256Mb (16 Meg x 16) 512Mb (32 Meg x 16)
Column Addressing
512 (A0–A8) 512 (A0–A8) 1K (A0–A9)
Module Rank Addressing
1 (S0#) 1 (S0#) 1 (S0#)
64MB, 128MB, 256MB (x64, SR)
184-PIN DDR SDRAM UDIMM
pdf: 09005aef8085081a, source: 09005aef806e129d Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16_32x64AG.fm - Rev. B 9/04 EN
2 ©2004 Micron Technology, Inc.
NOTE:
All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for
current revision codes. Example: MT4VDDT1664AG-265A1
.
Table 2: Part Numbers and Timing Parameters
PART NUMBER
MODULE
DENSITY CONFIGURATION
MODULE
BANDWITH
MEMORY CLOCK,
DATA RATE
CLOCK LATENCY
(CL -
t
RCD -
t
RP)
MT4VDDT864A(I)G-335__
64MB 8 Meg x 64 2.7GB/s 6ns, 333MT/s 2.5-3-3
MT4VDDT864A(I)Y-335__
64MB 8 Meg x 64 2.7GB/s 6ns, 333MT/s 2.5-3-3
MT4VDDT864A(I)G-262__
64MB 8 Meg x 64 2.1GB/s 7.5ns, 266MT/s 2-2-2
MT4VDDT864A(I)Y-262__
64MB 8 Meg x 64 2.1GB/s 7.5ns, 266MT/s 2-2-2
MT4VDDT864A(I)G-26A__
64MB 8 Meg x 64 2.1GB/s 7.5ns, 266MT/s 2-3-3
MT4VDDT864A(I)Y-26A__
64MB 8 Meg x 64 2.1GB/s 7.5ns, 266MT/s 2-3-3
MT4VDDT864A(I)G-265__
64MB 8 Meg x 64 2.1GB/s 7.5ns, 266 MT/s 2.5-3-3
MT4VDDT864A(I)Y-265__
64MB 8 Meg x 64 2.1GB/s 7.5ns, 266 MT/s 2.5-3-3
MT4VDDT1664A(I)G-335__
128MB 16 Meg x 64 2.7 GB/s 6ns, 333 MT/s 2.5-3-3
MT4VDDT1664A(I)Y-335__
128MB 16 Meg x 64 2.7 GB/s 6ns, 333 MT/s 2.5-3-3
MT4VDDT1664A(I)G-262__
128MB 16 Meg x 64 2.1 GB/s 7.5ns, 266 MT/s 2-2-2
MT4VDDT1664A(I)Y-262__
128MB 16 Meg x 64 2.1 GB/s 7.5ns, 266 MT/s 2-2-2
MT4VDDT1664A(I)G-26A__
128MB 16 Meg x 64 2.1 GB/s 7.5ns, 266 MT/s 2-3-3
MT4VDDT1664A(I)Y-26A__
128MB 16 Meg x 64 2.1 GB/s 7.5ns, 266 MT/s 2-3-3
MT4VDDT1664A(I)G-265__
128MB 16 Meg x 64 2.1GB/s 7.5ns, 266 MT/s 2.5-3-3
MT4VDDT1664A(I)Y-265__
128MB 16 Meg x 64 2.1GB/s 7.5ns, 266 MT/s 2.5-3-3
MT4VDDT3264A(I)G-335__
256MB 32 Meg x 64 2.7 GB/s 6ns, 333 MT/s 2.5-3-3
MT4VDDT3264A(I)Y-335__
256MB 32 Meg x 64 2.7 GB/s 6ns, 333 MT/s 2.5-3-3
MT4VDDT3264A(I)G-262__
256MB 32 Meg x 64 2.1 GB/s 7.5ns, 266 MT/s 2-2-2
MT4VDDT3264A(I)Y-262__
256MB 32 Meg x 64 2.1 GB/s 7.5ns, 266 MT/s 2-2-2
MT4VDDT3264A(I)G-26A__
256MB 32 Meg x 64 2.1 GB/s 7.5ns, 266 MT/s 2-3-3
MT4VDDT3264A(I)Y-26A__
256MB 32 Meg x 64 2.1 GB/s 7.5ns, 266 MT/s 2-3-3
MT4VDDT3264A(I)G-265__
256MB 32 Meg x 64 2.1GB/s 7.5ns, 266 MT/s 2.5-3-3
MT4VDDT3264A(I)Y-265__
256MB 32 Meg x 64 2.1GB/s 7.5ns, 266 MT/s 2.5-3-3
64MB, 128MB, 256MB (x64, SR)
184-PIN DDR SDRAM UDIMM
pdf: 09005aef8085081a, source: 09005aef806e129d Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16_32x64AG.fm - Rev. B 9/04 EN
3 ©2004 Micron Technology, Inc.
*
NOTE:
Pin 115 is no connect (NC) for 64MB, or is address input A12 for 128MB, 256MB.
Table 3: Pin Assignment
(184-Pin DIMM Front)
PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL
1VREF 24 DQ17 47 DNU 70 VDD
2DQ025 DQS2 48 A0 71 NC
3V
SS 26 VSS 49 DNU 72 DQ48
4DQ127 A9 50 V
SS 73 DQ49
5DQS028 DQ18 51 DNU 74 VSS
6DQ229 A7 52 BA1 75 CK2#
7V
DD 30 VDDQ 53 DQ32 76 CK2
8 DQ3 31 DQ19 54 V
DDQ77VDDQ
9NC32 A5 55 DQ33 78 DQS6
10 DNU 33 DQ24 56 DQS4 79 DQ50
11 V
SS 34 VSS 57 DQ34 80 DQ51
12 DQ8 35 DQ25 58 V
SS 81 VSS
13 DQ9 36 DQS3 59 BA0 82 NC
14 DQS1 37 A4 60 DQ35 83 DQ56
15 V
DDQ38 VDD 61 DQ40 84 DQ57
16 CK1 39 DQ26 62 V
DDQ85 VDD
17 CK1# 40 DQ27 63 WE# 86 DQS7
18 V
SS 41 A2 64 DQ41 87 DQ58
19 DQ10 42 V
SS 65 CAS# 88 DQ59
20 DQ11 43 A1 66 V
SS 89 VSS
21 CKE0 44 DNU 67 DQS5 90 NC
22 VDDQ 45 DNU 68 DQ42 91 SDA
23 DQ16 46 VDD 69 DQ43 92 SCL
Table 4: Pin Assignment
(184-Pin DIMM Back)
PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL
93 VSS 116 VSS 139 VSS 162 DQ47
94 DQ4 117 DQ21 140 DNU 163 NC
95 DQ5 118 A11 141 A10 164 V
DDQ
96 V
DDQ 119 DM2 142 DNU 165 DQ52
97 DM0 120 VDD 143 VDDQ 166 DQ53
98 DQ6 121 DQ22 144 DNU 167 NC
99 DQ7 122 A8 145 V
SS 168 VDD
100 VSS 123 DQ23 146 DQ36 169 DM6
101 NC 124 V
SS 147 DQ37 170 DQ54
102 NC 125 A6 148 V
DD 171 DQ55
103 NC 126 DQ28 149 DM4 172 VDDQ
104 V
DDQ 127 DQ29 150 DQ38 173 NC
105 DQ12 128 V
DDQ 151 DQ39 174 DQ60
106 DQ13 129 DM3 152 V
SS 175 DQ61
107 DM1 130 A3 153 DQ44 176 VSS
108 V
DD 131 DQ30 154 RAS# 177 DM7
109 DQ14 132 VSS 155 DQ45 178 DQ62
110 DQ15 133 DQ31 156 V
DDQ 179 DQ63
111 DNU 134 DNU 157 S0# 180 V
DDQ
112 V
DDQ 135 DNU 158 NC 181 SA0
113 NC 136 V
DDQ 159 DM5 182 SA1
114 DQ20 137 CK0 160 VSS 183 SA2
115 NC/A12 138 CK0# 161 DQ46 184 V
DDSPD
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MT4VDDT864AG-26AB1

Mfr. #:
Buy MT4VDDT864AG-26AB1
Manufacturer:
Micron
Description:
MODULE DDR SDRAM 64MB 184UDIMM
Lifecycle:
New from this manufacturer.
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