64MB, 128MB, 256MB (x64, SR)
184-PIN DDR SDRAM UDIMM
pdf: 09005aef8085081a, source: 09005aef806e129d Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16_32x64AG.fm - Rev. B 9/04 EN
16 ©2004 Micron Technology, Inc.
Table 15: Capacitance
Note: 11; notes appear on pages 18–21
PARAMETER SYMBOL MIN MAX UNITS
Input/Output Capacitance: DQ, DQS/DM
C
IO 4.0 5.0 pF
Input Capacitance: Command and Address: S#, CKE
C
I1 8.0 12.0 pF
Input Capacitance: CK0, CK0#
C
I2 –9.0 pF
Input Capacitance: CK1, CK1#; CK2, CK2#
C
I2 10.0 12.0 pF
Table 16: DDR SDRAM Component Electrical Characteristics and Recommended
AC Operating Conditions
Notes: 1–5, 13-15, 29, 48; notes appear on pages 18–21; 0°C to +70°C; VDD = VDDQ = +2.5V ±0.2V
AC CHARACTERISTICS -335 -262 -26A/-265
UNITS NOTES
PARAMETER
SYMBOL
MIN MAX MIN MAX MIN MAX
Access window of DQs from CK/CK#
t
AC
-0.7 +0.7 -0.75 +0.75 -0.75 +0.75 ns
CK high-level width
t
CH
0.45 0.55 0.45 0.55 0.45 0.55
t
CK
26
CK low-level width
t
CL
0.45 0.55 0.45 0.55 0.45 0.55
t
CK
26
Clock cycle time CL = 2.5
t
CK (2.5)
6 137.5137.513ns41, 46
CL = 2
t
CK (2)
7.5 13 7.5/10 13 7.5/10 13 ns 41, 46
DQ and DM input hold time relative to DQS
t
DH
0.45 0.5 0.5 ns 23, 27
DQ and DM input setup time relative to DQS
t
DS
0.45 0.5 0.5 ns 23, 27
DQ and DM input pulse width (for each input)
t
DIPW
1.75 1.75 1.75 ns 27
Access window of DQS from CK/CK#
t
DQSCK
-0.60 +0.60 -0.75 +0.75 -0.75 +0.75 ns
DQS input high pulse width
t
DQSH
0.35 0.35 0.35
t
CK
DQS input low pulse width
t
DQSL
0.35 0.35 0.35
t
CK
DQS-DQ skew, DQS to last DQ valid, per group,
per access
t
DQSQ
0.45 0.5 0.5 ns 22, 23
Write command to first DQS latching transition
t
DQSS
0.75 1.25 0.75 1.25 0.75 1.25
t
CK
DQS falling edge to CK rising - setup
time
t
DSS
0.2 0.2 0.2
t
CK
DQS falling edge from CK rising -
hold time
t
DSH
0.2 0.2 0.2
t
CK
Half clock period
t
HP
t
CH,
t
CL
t
CH,
t
CL
t
CH,
t
CL
ns 31
Data-out high-impedance window from CK/CK#
t
HZ
+0.70 +0.75 +0.75 ns 16, 37
Data-out low-impedance window from CK/CK#
t
LZ
-0.70 -0.75 -0.75 ns 16, 37
Address and control input hold time (fast slew
rate)
t
IH
F
0.75 0.90 .90 ns 12
Address and control input setup time (fast slew
rate)
t
IS
F
0.75 0.90 .90 ns 12
Address and control input hold time (slow slew
rate)
t
IH
S
0.80 1 1 ns 12
Address and control input setup time (slow slew
rate)
t
IS
S
0.80 1 1 ns 12
Address and Control input pulse width (for
each input)
t
IPW
2.2 2.2 2.2 ns
64MB, 128MB, 256MB (x64, SR)
184-PIN DDR SDRAM UDIMM
pdf: 09005aef8085081a, source: 09005aef806e129d Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16_32x64AG.fm - Rev. B 9/04 EN
17 ©2004 Micron Technology, Inc.
LOAD MODE REGISTER command cycle time
t
MRD
12 15 15 ns
DQ-DQS hold, DQS to first DQ to go non-valid,
per access
t
QH
t
HP -
t
QHS
t
HP -
t
QHS
t
HP -
t
QHS
ns 22, 23
Data hold skew factor
t
QHS
0.55 0.75 0.75 ns
ACTIVE to PRECHARGE command
t
RAS
42 70,000 40
120,000
40
120,000
ns 31, 49
ACTIVE to READ with Auto precharge
command
t
RAP
15 15 20 ns
ACTIVE to ACTIVE/AUTO REFRESH command
period
t
RC
60 60 65 ns
AUTO REFRESH command period
t
RFC
72 75 75 ns 44
ACTIVE to READ or WRITE delay
t
RCD
15 15 20 ns
PRECHARGE command period
t
RP
15 15 20 ns
DQS read preamble
t
RPRE
0.9 1.1 0.9 1.1 0.9 1.1
t
CK
38
DQS read postamble
t
RPST
0.4 0.6 0.4 0.6 0.4 0.6
t
CK
38
ACTIVE bank a to ACTIVE bank b
command
t
RRD
12 15 15 ns
DQS write preamble
t
WPRE
0.25 0.25 0.25
t
CK
DQS write preamble setup time
t
WPRES
000ns18, 19
DQS write postamble
t
WPST
0.4 0.6 0.4 0.6 0.4 0.6
t
CK
17
Write recovery time
t
WR
15 15 15 ns
Internal WRITE to READ command
delay
t
WTR
111
t
CK
Data valid output window
na
t
QH -
t
DQSQ
t
QH -
t
DQSQ
t
QH -
t
DQSQ
ns 22
REFRESH to REFRESH command
interval
64MB
t
REFC
140.6 140.6 140.6 µs 21
128MB,
256MB
70.3 70.3 70.3 µs 21
Average periodic refresh interval 64MB
t
REFI
15.6 15.6 15.6 µs 21
128MB,
256MB
7.8 7.8 7.8 µs 21
Terminating voltage delay to V
DD
t
VTD
000ns
Exit SELF REFRESH to non-READ command
t
XSNR
75 75 75 ns
Exit SELF REFRESH to READ command
t
XSRD
200 200 200
t
CK
Table 16: DDR SDRAM Component Electrical Characteristics and Recommended
AC Operating Conditions (Continued)
Notes: 1–5, 13-15, 29, 48; notes appear on pages 18–21; 0°C to +70°C; VDD = VDDQ = +2.5V ±0.2V
AC CHARACTERISTICS -335 -262 -26A/-265
UNITS NOTES
PARAMETER
SYMBOL
MIN MAX MIN MAX MIN MAX
64MB, 128MB, 256MB (x64, SR)
184-PIN DDR SDRAM UDIMM
pdf: 09005aef8085081a, source: 09005aef806e129d Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16_32x64AG.fm - Rev. B 9/04 EN
18 ©2004 Micron Technology, Inc.
Notes
1. All voltages referenced to VSS.
2. Tests for AC timing, I
DD, and electrical AC and DC
characteristics may be conducted at nominal ref-
erence/supply voltage levels, but the related spec-
ifications and device operation are guaranteed for
the full voltage range specified.
3. Outputs measured with equivalent load:
4. AC timing and I
DD tests may use a VIL-to-VIH
swing of up to 1.5V in the test environment, but
input timing is still referenced to V
REF (or to the
crossing point for CK/CK#), and parameter speci-
fications are guaranteed for the specified AC input
levels under normal use conditions. The mini-
mum slew rate for the input signals used to test
the device is 1V/ns in the range between V
IL(AC)
and V
IH(AC).
5. The AC and DC input level specifications are as
defined in the SSTL_2 Standard (i.e., the receiver
will effectively switch as a result of the signal
crossing the AC input level, and will remain in that
state as long as the signal does not ring back
above [below] the DC input LOW [HIGH] level).
6. V
REF is expected to equal VDDQ/2 of the transmit-
ting device and to track variations in the DC level
of the same. Peak-to-peak noise (non-common
mode) on V
REF may not exceed ±2 percent of the
DC value. Thus, from V
DDQ/2, VREF is allowed
±25mV for DC error and an additional ±25mV for
AC noise. This measurement is to be taken at the
nearest V
REF bypass capacitor.
7. V
TT is not applied directly to the device. VTT is a
system supply for signal termination resistors, is
expected to be set equal to V
REF and must track
variations in the DC level of V
REF.
8. I
DD is dependent on output loading and cycle
rates. Specified values are obtained with mini-
mum cycle time at CL = 2 for -262, and -26A, CL =
2.5 for -335 and -265 with the outputs open.
9. Enables on-chip refresh and address counters.
10. I
DD specifications are tested after the device is
properly initialized, and is averaged at the defined
cycle rate.
11. This parameter is sampled. V
DD = +2.5V ±0.2V,
V
DDQ = +2.5V ±0.2V, VREF = VSS, f = 100 MHz, T
A
=
25°C, V
OUT (DC) = VDDQ/2, VOUT (peak to peak) =
0.2V. DM input is grouped with I/O pins, reflecting
the fact that they are matched in loading.
12. For slew rates less than 1 V/ns and greater than or
equal to 0.5 V/ns. If slew rate is less than 0.5 V/ns,
timing must be derated:
t
IS has an additional 50ps
per each 100mV/ns reduction in slew rate from
500mV/ns, while
t
IH is unaffected. If slew rate
exceeds 4.5V/ns, functionality is uncertain.
13. The CK/CK# input reference level (for timing ref-
erenced to CK/CK#) is the point at which CK and
CK# cross; the input reference level for signals
other than CK/CK# is V
REF.
14. Inputs are not recognized as valid until V
REF stabi-
lizes. Exception: during the period before V
REF
stabilizes, CKE 0.3 x VDDQ is recognized as LOW.
15. The output timing reference level, as measured at
the timing reference point indicated in Note 3, is
V
TT.
16.
t
HZ and
t
LZ transitions occur in the same access
time windows as valid data transitions. These
parameters are not referenced to a specific voltage
level, but specify when the device output is no
longer driving (HZ) or begins driving (LZ).
17. The intent of the Dont Care state after completion
of the postamble is the DQS-driven signal should
either be high, low, or high-Z and that any signal
transition within the input switching region must
follow valid input requirements. That is, if DQS
transitions high [above V
IHDC (MIN)] then it must
not transition low (below V
IHDC) prior to
t
DQSH(MIN).
18. This is not a device limit. The device will operate
with a negative value, but system performance
could be degraded due to bus turnaround.
19. It is recommended that DQS be valid (HIGH or
LOW) on or before the WRITE command. The
case shown (DQS going from High-Z to logic
LOW) applies when no WRITEs were previously in
progress on the bus. If a previous WRITE was in
progress, DQS could be HIGH during this time,
depending on
t
DQSS.
20. MIN (
t
RC or
t
RFC) for IDD measurements is the
smallest multiple of
t
CK that meets the minimum
absolute value for the respective parameter.
t
RAS
(MAX) for I
DD measurements is the largest multi-
ple of
t
CK that meets the maximum absolute
value for
t
RAS.
21. The refresh period 64ms. This equates to an aver-
age refresh rate of 15.625µs (64MB) or 7.8125µs
(128MB, 256MB). However, an AUTO REFRESH
command must be asserted at least once every
Output
(V
OUT
)
Reference
Point
50
V
TT
30pF

MT4VDDT864AG-26AB1

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MODULE DDR SDRAM 64MB 184UDIMM
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