64MB, 128MB, 256MB (x64, SR)
184-PIN DDR SDRAM UDIMM
pdf: 09005aef8085081a, source: 09005aef806e129d Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16_32x64AG.fm - Rev. B 9/04 EN
4 ©2004 Micron Technology, Inc.
184-Pin DIMM Pinouts
Table 5: Pin Descriptions
Pin numbers may not correlate with symbols; refer to Pin Assignment tables on page 3 for more information
PIN NUMBERS SYMBOL TYPE DESCRIPTION
63, 65, 154 WE#, CAS#,
RAS#
Input
Command Inputs: RAS#, CAS#, and WE# (along with S#)
define the command being entered.
16, 17, 75, 76, 137, 138 CK0, CK0#,
CK1, CK1#,
CK2, CK2#
Input
Clock: CK and CK# are differential clock inputs. All address
and control input signals are sampled on the crossing of the
positive edge of CK and negative edge of CK#. Output data
(DQs and DQS) is referenced to the crossings of CK and CK#.
21 CKE Input
Clock Enable: CKE HIGH activates and CKE LOW deactivates
the internal clock, input buffers, and output drivers. Taking
CKE LOW provides PRECHARGE POWER-DOWN and SELF
REFRESH operations (all device banks idle), or ACTIVE
POWER-DOWN (row ACTIVE in any device bank). CKE is
synchronous for POWER-DOWN entry and exit, and for SELF
REFRESH entry. CKE is asynchronous for SELF REFRESH exit
and for disabling the outputs. CKE must be maintained HIGH
throughout read and write accesses. Input buffers (excluding
CK, CK# and CKE) are disabled during POWER-DOWN. Input
buffers (excluding CKE) are disabled during SELF REFRESH.
CKE is an SSTL_2 input but will detect an LVCMOS LOW level
after V
DD is applied and until CKE is first brought HIGH. After
CKE is brought HIGH, it becomes an SSTL_2 input only.
157 S0# Input
Chip Select: S# enables (registered LOW) and disables
(registered HIGH) the command decoder. All commands are
masked when S# is registered HIGH. S# is considered part of
the command code.
52, 59 BA0, BA1 Input
Bank Address: BA0 and BA1 define to which device bank an
ACTIVE, READ, WRITE, or PRECHARGE command is being
applied.
U1
U2
U4 U5
U6
No Components This Side of Module
PIN 93
PIN 144
PIN 145
PIN 184
PIN 1
PIN 52
PIN 53
PIN 92
Indicates a V
DD
or V
DDQ
pin Indicates a V
SS
pin
Front View
Back View
64MB, 128MB, 256MB (x64, SR)
184-PIN DDR SDRAM UDIMM
pdf: 09005aef8085081a, source: 09005aef806e129d Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16_32x64AG.fm - Rev. B 9/04 EN
5 ©2004 Micron Technology, Inc.
27, 29, 32, 37, 41, 43,
48, 115 (128MB, 256MB), 118,
122, 125, 130, 141
A0–A11
(64MB)
A0–A12
(128MB, 256MB)
Input
Address Inputs: Provide the row address for ACTIVE
commands, and the column address and auto precharge bit
(A10) for READ/WRITE commands, to select one location out
of the memory array in the respective device bank. A10
sampled during a PRECHARGE command determines
whether the PRECHARGE applies to one device bank (A10
LOW, device bank selected by BA0, BA1) or all device banks
(A10 HIGH). The address inputs also provide the op-code
during a MODE REGISTER SET command. BA0 and BA1 define
which mode register (mode register or extended mode
register) is loaded during the LOAD MODE REGISTER
command.
91 SDA Input/
Output
Serial Presence-Detect Data: SDA is a bidirectional pin used
to transfer addresses and data into and out of the presence-
detect portion of the module.
92 SCL Input
Serial Clock for Presence-Detect: SCL is used to synchronize
the presence-detect data transfer to and from the module.
181, 182, 183 SA0–SA2 Input
Presence-Detect Address Inputs: These pins are used to
configure the presence-detect device.
97, 107, 119, 129, 149, 159,
169, 177
DM0–DM7 Input/
Output
Data Write Mask: DM LOW allows WRITE operation. DM
HIGH blocks WRITE operation. DM lines do not affect READ
operation.
5, 14, 25, 36, 56, 67, 78, 86 DQS0–DQS7 Input/
Output
Data Strobe: Output with READ data, input with WRITE data.
DQS is edge-aligned with READ data, centered in WRITE
data. Used to capture data.
2, 4, 6, 8, 12, 13, 19, 20, 23, 24,
28, 31, 33, 35, 39, 40, 53, 55,
57, 60, 61, 64, 68, 69, 72, 73,
79, 80, 83, 84, 87, 88, 94, 95,
98, 99, 105, 106, 109, 110, 114,
117, 121, 123, 126, 127, 131,
133, 146, 147, 150, 151, 153,
155, 161, 162, 165, 166, 170,
171, 174, 175, 178, 179
DQ0–DQ63 Input/
Output
Data I/Os: Data bus.
1V
REF Supply
SSTL_2 reference voltage.
15, 22, 30, 54, 62, 77, 96, 104,
112, 128, 136, 143, 156, 164,
172, 180
V
DDQ Supply
DQ Power Supply: +2.5V ±0.2V.
7, 38, 46, 70, 85, 108, 120, 148,
168
VDD Supply
Power Supply: +2.5V ±0.2V.
3, 11, 18, 26, 34, 42, 50, 58, 66,
74, 81, 89, 93, 100, 116, 124,
132, 139, 145, 152, 160, 176
V
SS Supply
Ground.
184 V
DDSPD Supply
Serial EEPROM positive power supply: +2.3V to +3.6V.
9, 71, 82, 90, 101, 102, 103,
113, 115 (64MB), 158, 163, 167,
173
NC
No Connect: These pins should be left unconnected.
10, 44, 45, 47, 49, 51, 111, 134,
135, 140, 142, 144
DNU
Do Not Use: These pins are not connected on this module but
are assigned pins on other modules in this product family.
Table 5: Pin Descriptions
Pin numbers may not correlate with symbols; refer to Pin Assignment tables on page 3 for more information
PIN NUMBERS SYMBOL TYPE DESCRIPTION
64MB, 128MB, 256MB (x64, SR)
184-PIN DDR SDRAM UDIMM
pdf: 09005aef8085081a, source: 09005aef806e129d Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16_32x64AG.fm - Rev. B 9/04 EN
6 ©2004 Micron Technology, Inc.
Figure 2: Functional Block Diagram
DM3/DQS12
DM2/DQS11
DQ0
DQ1
DQ2
DQ3
DM0/DQS9
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
U1
DQ12
DQ13
DQ14
DQ15
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
U2
DQ28
DQ29
DQ30
DQ31
DQ40
DQ41
DQ42
DQ43
U4
DM4/DQS13
DQ44
DQ45
DQ46
DQ47
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQ56
DQ57
DQ58
DQ59
U5
DQ60
DQ61
DQ62
DQ63
DM1/DQS10
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DM5/DQS14
DM6/DQS15
DM7/DQS16
S0#
S0#
S0#
LDM
UDM
S0#
BA0-BA1
A0-A11 (64MB)
RAS#
CAS#
WE#
CKE0
DDR SDRAMS
CK1
CK2
DDR SDRAMs
U1, U2
DDR SDRAMs
U4, U5
DQS0
UDQS
DQS1
LDQS
DQS2
DQS3
DQS7
DQS6
DQS5
DQS4
CK2#
CK1#
DDR SDRAMS
DDR SDRAMS
DDR SDRAMS
DDR SDRAMS
DDR SDRAMS
S0#
A0
SA0
SERIAL PD
SDA
A1
SA1
A2
SA2
WP
SCL
U6
VREF
VSS
DDR SDRAMS
DDR SDRAMS
VDD
DDR SDRAMS
VDDSPD
SPD/EEPROM
A0-A12 (128MB, 256MB)
DDR SDRAMS
LDM
UDM
UDQS
LDQS
LDM
UDM
UDQS
LDQS
LDM
UDM
UDQS
LDQS
VDDQ
DDR SDRAMS
6pF
7.5
6pF
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
CK0
CK0#
120
9.0pF
120
120
NOTE:
1. Unless otherwise noted, resistor values are 22.
2. DQ wiring may differ from that described in this drawing; however DQ/
DM/ DQS relationships are maintained as shown.
3. Per industry standard, Micron modules utilize various component speed
grades, as referenced in the module part numbering guide at
www.micron.com/numberguide.
Standard modules use the following DDR SDRAM devices:
MT46V8M16TG (64MB); MT46V16M16TG (128MB); MT46V32M16TG (256MB)
Lead-free modules use the following DDR SDRAM devices:
MT46V8M16P (64MB); MT46V16M16P (128MB); MT46V32M16P (256MB)
Contact factory for availability of Ind. Temp. DIMMs.

MT4VDDT864AG-26AB1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR SDRAM 64MB 184UDIMM
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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