IP4855CX25 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 24 May 2013 11 of 30
NXP Semiconductors
IP4855CX25
SD 3.0-compliant memory card integrated dual voltage level translator
[1] Typical values are measured at T
amb
=25C.
[2] EMI filter line capacitance per data channel from I/O driver to pin; C
ch
is guaranteed by design.
12. Dynamic characteristics
12.1 Voltage regulator
Current consumption
I
CC(stat)
static supply current ENABLE = HIGH (active mode);
all inputs = HIGH; DIR = LOW
SEL = LOW (2.9 V interface) - - 100 A
SEL = HIGH (1.8 V interface) - - 100 A
I
CC(stb)
standby supply
current
ENABLE = LOW (inactive mode) - - 1 A
Table 10. Static characteristics
…continued
At recommended operating conditions; T
amb
=
40
C to +85
C; voltages are referenced to GND (ground = 0 V);
C
ext
=1
F at pin V
LDO
; unless otherwise specified.
Symbol Parameter Conditions Min Typ
[1]
Max Unit
Table 11. Voltage regulator
T
amb
=25
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Voltage regulator output pin: V
LDO
t
startup(reg)
regulator start-up time V
CCA
=1.8V; V
SUPPLY
= 3.5 V;
C
ext
=1F; see Figure 5
- - 100 s
t
f(o)
output fall time V
O(reg)
= 2.9 V to 1.8 V;
SEL = LOW to HIGH; see Figure 4
--1ms
t
r(o)
output rise time V
O(reg)
= 1.8 V to 2.9 V;
SEL = HIGH to LOW; see Figure 4
- - 100 s
