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IP4855CX25Z

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30
IP4855CX25 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 24 May 2013 7 of 30
NXP Semiconductors
IP4855CX25
SD 3.0-compliant memory card integrated dual voltage level translator
8.4 Memory card voltage tracking (reference select)
The device can track the memory card supply via pin V
SD_REF
. This allows achieving
optimum interoperability by perfectly matching input/output levels between voltage
translator and memory card in the 3 V signaling mode. Therefore, the voltage regulator
aims to follow the reference voltage provided at input V
SD_REF
directly. If tracking of the
memory card supply is not desired, connect pin V
SD_REF
to ground so the voltage
regulator refers to an integrated voltage reference. For 1.8 V (SEL = HIGH) signaling, the
voltage regulator is referred to the internal reference which is independent of the voltage
at V
SD_REF.
8.5 Feedback clock channel
The clock is transmitted from the host to the memory card side. The voltage translator and
the Printed-Circuit Board (PCB) tracks introduce some amount of delay. It reduces timing
margin for data read back from memory card, especially at higher data rates. Therefore, a
feedback path is provided to compensate the delay. The reasoning behind this approach
is the fact that the clock is always delivered by the host, while the data in the timing critical
read mode comes from the card.
8.6 EMI filter
All input/output driver stages are equipped with EMI filters to reduce interferences towards
sensitive mobile communication.
8.7 ESD protection
The device has robust ESD protections on all memory card pins as well as on the V
SD_REF
and V
SUPPLY
pins. The architecture prevents any stress for the host: the voltage translator
discharges any stress to supply ground.
Pins Write Protect (WP) and Card Detection (CD) might be pulled down by the memory
card which has to be detected by the host. Both signals must be HIGH if no card is
inserted. Therefore the pins are equipped with International Electrotechnical
Commission (IEC) system-level ESD protections and pull-up resistors connected to the
host supply V
CCA
.
IP4855CX25 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 24 May 2013 8 of 30
NXP Semiconductors
IP4855CX25
SD 3.0-compliant memory card integrated dual voltage level translator
9. Limiting values
[1] All system level tests are performed with the application-specific capacitors connected to the supply pins V
SUPPLY
, V
LDO
and V
CCA
.
10. Recommended operating conditions
[1] By minimum value the device is still fully functional, but the voltage on pin V
LDO
might drop below the recommended memory card
supply voltage.
[2] The voltage must not exceed 3.6 V.
Table 7. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 4 ms transient
on pin V
SUPPLY
0.5 +6.0 V
on pin V
CCA
0.5 +4.6 V
V
I
input voltage 4 ms transient at I/O pins 0.5 +4.6 V
P
tot
total power dissipation T
amb
= 40 C to +85 C - 1000 mW
T
stg
storage temperature 55 +150 C
T
amb
ambient temperature 40 +85 C
V
ESD
electrostatic discharge
voltage
IEC 61000-4-2, level 4, all memory card-side pins,
V
SUPPLY
, V
SD_REF
, WP and CD to ground
[1]
8000 +8000 V
Human Body Model (HBM)
JEDEC JESD22-A114F; all pins
2000 +2000 V
Machine Model (MM) JEDEC JESD22-A115;
all pins
200 +200 V
I
lu(IO)
input/output latch-up current JESD 78B: 0.5 V
CC
<V
I
<1.5V
CC
; T
j
< 125 C 100 +100 mA
Table 8. Operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage on pin V
SUPPLY
[1]
2.5 - 5.5 V
on pin V
CCA
1.1 - 3.6 V
V
I
input voltage host side
[2]
0.3 - V
CCA
+ 0.3 V
memory card side 0.3 - V
O(reg)
+ 0.3 V
C
ext
external
capacitance
recommended capacitor at pin V
LDO
-1.0- F
ESR equivalent series
resistance
at pin V
LDO
0- 50 mW
C
ext
external
capacitance
recommended capacitor at pin V
SUPPLY
-0.1- F
recommended capacitor at pin V
CCA
-0.1- F
IP4855CX25 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 24 May 2013 9 of 30
NXP Semiconductors
IP4855CX25
SD 3.0-compliant memory card integrated dual voltage level translator
[1] Guaranteed by design and characterization.
11. Static characteristics
Table 9. Integrated resistors
T
amb
=25
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
R
pd
pull-down resistance R7; tolerance 30 % 329 470 611 k
R30; tolerance 30 % 70 100 130
R38; tolerance 30 % 200 350 500 k
R20, R21; tolerance 30 % 200 350 500 k
R
pu
pull-up resistance R10; tolerance 30 % 10.5 15 19.5 k
R11 to R13; tolerance 30 % 49 70 91 k
R14 and R15; tolerance 30 % 70 100 130 k
R
s
series resistance card side; R1 to R6; tolerance 20 %
[1]
32 40 48
host side; R31 to R37; tolerance 20 %
[1]
26 33 40
Table 10. Static characteristics
At recommended operating conditions; T
amb
=
40
C to +85
C; voltages are referenced to GND (ground = 0 V);
C
ext
=1
F at pin V
LDO
; unless otherwise specified.
Symbol Parameter Conditions Min Typ
[1]
Max Unit
Supply voltage regulator for card-side I/O pin: V
LDO
V
O(reg)
regulator output
voltage
SEL = LOW; V
SD_REF
<1V; V
SUPPLY
2.9 V 2.75 2.9 3.0 V
SEL = LOW; V
SD_REF
> 1.5 V;
V
SUPPLY
V
SD_REF
V
SD_REF
0.15
V
SD_REF
V
SD_REF
+ 0.05
V
SEL = HIGH; V
SUPPLY
2.5 V 1.7 1.8 1.95 V
V
do(reg)
regulator dropout
voltage
SEL = LOW; V
SUPPLY
2.9 V; I
O
= 50 mA - - 150 mV
Host-side input signals: CMD_H and DATA0_H to DATA3_H, CLK_IN
V
IH
HIGH-level input
voltage
0.625
V
CCA
-V
CCA
+
0.3
V
V
IL
LOW-level input
voltage
0.3 - 0.25
V
CCA
V
I
LI
input leakage current V
CCA
= 1.8 V; ENABLE = LOW - - 1.0 nA
Host-side control signals
SEL, ENABLE
V
IH
HIGH-level input
voltage
0.75 - V
CCA
+
0.3
V
V
IL
LOW-level input
voltage
0.3 - 0.15 V
DIR_0, DIR_1_3, DIR_CMD
V
IH
HIGH-level input
voltage
0.65
V
CCA
-V
CCA
+
0.3
V
V
IL
LOW-level input
voltage
0.3 - 0.35
V
CCA
V
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30

IP4855CX25Z

Mfr. #:
Buy IP4855CX25Z
Manufacturer:
Nexperia
Description:
Translation - Voltage Levels SD 3.0-Compliant Memory Card
Lifecycle:
New from this manufacturer.
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