NXP Semiconductors
SL2S2002_SL2S2102
ICODE SLIX
SL2S2002_SL2S2102 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2017. All rights reserved.
Product data sheet Rev. 3.4 — 10 August 2017
COMPANY PUBLIC 178034 25 / 39
10 Limiting values
Table 41. Limiting values (Wafer)
[1][2]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
T
stg
storage temperature -55 +125 °C
P
tot
total power dissipation - 125 mW
T
j
junction temperature -40 +85 °C
I
i(max)
maximum input current LA to LB; peak
[3]
- ±60 mA
I
I
input current LA to LB; RMS - 30 mA
V
ESD
electrostatic discharge voltage Human body model
[4]
- ±2 kV
[1] Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any conditions other than those described in the operating conditions and electrical characteristics sections of this
specification is not implied.
[2] This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static charge.
Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maxima.
[3] The voltage between LA and LB is limited by the on-chip voltage limitation circuitry (corresponding to parameter I
I
).
[4] For ESD measurement, the IC was mounted in a CDIP8 package.
