TDA8954_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 24 December 2009 18 of 46
NXP Semiconductors
TDA8954
2 × 210 W class-D power amplifier
10. Limiting values
11. Thermal characteristics
12. Static characteristics
Table 7. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
ΔV voltage difference V
DD
− V
SS
; Standby, Mute modes - 90 V
I
ORM
repetitive peak output current maximum output current limiting; one
channel driven
12 - A
T
stg
storage temperature −55 +150 °C
T
amb
ambient temperature −40 +85 °C
T
j
junction temperature - 150 °C
V
OSC
voltage on pin OSC relative to V
SSA
0 SGND + 6 V
V
pu
pull-up voltage on pins DIAG1 and DIAG2; see Figure 13 0 5 V
V
I
input voltage referenced to SGND; on pins IN1P, IN1M,
IN2P and IN2M
−5 +5 V
V
PROT
voltage on pin PROT referenced to voltage on pin VSSA 0 12 V
V
MODE
voltage on pin MODE referenced to SGND 0 8 V
I
I
input current on pins DIAG1 and DIAG2 0 1 mA
V
ESD
electrostatic discharge voltage Human Body Model (HBM) −2000 +2000 V
Charged Device Model (CDM) −500 +500 V
V
PWM(p-p)
peak-to-peak PWM voltage on pins OUT1 and OUT2 - 120 V
Table 8. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-a)
thermal resistance from junction to ambient in free air 40 K/W
R
th(j-c)
thermal resistance from junction to case 0.9 K/W
Table 9. Static characteristics
V
DD
= 41 V; V
SS
=
−
41 V; f
osc
= 335 kHz; T
amb
= 25
°
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Supply
V
DD
positive supply voltage Operating mode
[1]
12.5 41 42.5 V
V
SS
negative supply voltage Operating mode
[2]
−12.5 −41 −42.5 V
V
th(ovp)
overvoltage protection
threshold voltage
Standby, Mute modes; V
DD
− V
SS
85 - 90 V
V
th(uvp)
undervoltage protection
threshold voltage
V
DD
− V
SS
20 - 25 V
V
th(ubp)
unbalance protection threshold
voltage
[3]
- 33 - %
