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TDA8954J/N1,112

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P39P40-P42P43-P45P46-P46
TDA8954_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 24 December 2009 28 of 46
NXP Semiconductors
TDA8954
2 × 210 W class-D power amplifier
14.8 Curves measured in reference design (demo board TDA8954J)
V
DD
= 41 V, V
SS
= −41 V, f
osc
= 325 kHz (external 650 kHz oscillator), 2 × 4 Ω SE configuration.
(1) f
i
= 1 kHz.
(2) f
i
= 6 kHz.
(3) f
i
= 100 Hz.
Fig 14. THD + N as a function of output power, SE configuration with 2 × 4 Ω load
V
DD
= 39 V, V
SS
= −39, f
osc
= 325 kHz (external 650 kHz oscillator), 2 × 3 Ω SE configuration.
(1) f
i
= 1 kHz.
(2) f
i
= 6 kHz.
(3) f
i
= 100 Hz.
Fig 15. THD + N as a function of output power, SE configuration with 2 × 3 Ω load
(3)
(2)
(1)
010aaa598
Po (W)
10
−2
10
2
10
3
1010
−1
1
1
10
−1
10
THD+N
(%)
10
−2
(3)
(2)
(1)
010aaa599
Po (W)
10
−2
10
2
10
3
1010
−1
1
1
10
−1
10
THD+N
(%)
10
−2
TDA8954_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 24 December 2009 29 of 46
NXP Semiconductors
TDA8954
2 × 210 W class-D power amplifier
V
DD
= 41 V, V
SS
= −41, f
osc
= 325 kHz (external 650 kHz oscillator), 1 × 8 Ω BTL configuration.
(1) f
i
= 1 kHz.
(2) f
i
= 6 kHz.
(3) f
i
= 100 Hz.
Fig 16. THD + N as a function of output power, BTL configuration with 1 × 8 Ω load
V
DD
= 41 V, V
SS
= −41, f
osc
= 325 kHz (external 650 kHz oscillator), 2 × 4 Ω SE configuration.
(1) P
o
= 1 W.
(2) P
o
= 10 W.
(3) P
o
= 100 W.
Fig 17. THD + N as a function of frequency, SE configuration with 2 × 4 Ω load
(3)
(2)
(1)
010aaa600
Po (W)
10
−2
10
2
10
3
1010
−1
1
1
10
−1
10
THD+N
(%)
10
−2
(1)
(3)
(2)
010aaa655
fi (Hz)
10 10
5
10
4
10
2
10
3
10
−1
1
THD+N
(%)
10
−2
TDA8954_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 24 December 2009 30 of 46
NXP Semiconductors
TDA8954
2 × 210 W class-D power amplifier
V
DD
= 39 V, V
SS
= −39, f
osc
= 325 kHz (external 650 kHz oscillator), 2 × 3 Ω SE configuration.
(1) P
o
= 1 W.
(2) P
o
= 10 W.
(3) P
o
= 100 W.
Fig 18. THD + N as a function of frequency, SE configuration with 2 × 3 Ω load
V
DD
= 41 V, V
SS
= −41, f
osc
= 325 kHz (external 650 kHz oscillator), 1 × 8 Ω BTL configuration.
(1) P
o
= 1 W.
(2) P
o
= 10 W.
(3) P
o
= 100 W.
Fig 19. THD + N as a function of frequency, BTL configuration with 1 × 8 Ω load
(1)
(3)
(2)
010aaa656
fi (Hz)
10 10
5
10
4
10
2
10
3
10
−1
1
THD+N
(%)
10
−2
(1)
(2)
(3)
010aaa629
fi (Hz)
10 10
5
10
4
10
2
10
3
10
−1
1
THD+N
(%)
10
−2
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P39P40-P42P43-P45P46-P46

TDA8954J/N1,112

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Buy TDA8954J/N1,112
Manufacturer:
NXP Semiconductors
Description:
Audio Amplifiers 2-CH 210 W class-D power amplifier
Lifecycle:
New from this manufacturer.
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