TDA8954_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 24 December 2009 25 of 46
NXP Semiconductors
TDA8954
2 × 210 W class-D power amplifier
(5)
Power dissipation (P) is determined by the efficiency of the TDA8954.
In the following example, a heatsink calculation is made for an 4 Ω SE application with a
±30
V supply:
The audio signal has a crest factor of 10 (the ratio between peak power and average
power
(20 dB); this means that the average output power is
1
10
of the peak power.
Thus, the peak RMS output power level is the 0.5 % THD level, i.e. 92.5 W per channel.
The average power is then
1
10
× 92.5 W = 9.25 W per channel.
The dissipated power at an output power of 9.25 W is approximately 9.5 W.
When the maximum expected ambient temperature is 50 °C, the total R
th(j-a)
becomes
R
th(j-a)
= R
th(j-c)
+ R
th(c-h)
+ R
th(h-a)
R
th(j-c)
(thermal resistance from junction to case) = 0.9 K/W
R
th(c-h)
(thermal resistance from case to heatsink) = 0.5 K/W to 1 K/W (dependent on
mounting)
So the thermal resistance between heatsink and ambient temperature is:
(1) R
th(j-a)
= 5 K/W.
(2) R
th(j-a)
= 10 K/W.
(3) R
th(j-a)
= 15 K/W.
(4) R
th(j-a)
= 20 K/W.
(5) R
th(j-a)
= 35 K/W.
Fig 12. Derating curves for power dissipation as a function of maximum ambient
temperature
R
th
ja()
T
j
T
amb
P
----------------------
=
P
(W)
30
20
10
0
T
amb
(°C)
(1)
(2)
(3)
(4)
(5)
0 20 10040 60 80
mbl469
148 50()
9.5
-------------------------
10.3 K/W=
TDA8954_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 24 December 2009 26 of 46
NXP Semiconductors
TDA8954
2 × 210 W class-D power amplifier
R
th(h-a)
(thermal resistance from heatsink to ambient) = 10.3 (0.9 + 1) = 8.4 K/W
The derating curves for power dissipation (for several R
th(j-a)
values) are illustrated in
Figure 12. A maximum junction temperature T
j
= 150 °C is taken into account. The
maximum allowable power dissipation for a given heatsink size can be derived, or the
required heatsink size can be determined, at a required power dissipation level; see
Figure 12.
14.6 Pumping effects
In a typical stereo single-ended configuration, the TDA8954 is supplied by a symmetrical
supply voltage (e.g. V
DD
= +41 V and V
SS
= 41 V). When the amplifier is used in an SE
configuration, a ‘pumping effect’ can occur. During one switching interval, energy is taken
from one supply (e.g. V
DD
), while a part of that energy is returned to the other supply line
(e.g. V
SS
) and vice versa. When the voltage supply source cannot sink energy, the voltage
across the output capacitors of that voltage supply source increases and the supply
voltage is pumped to higher levels. The voltage increase caused by the pumping effect
depends on:
Speaker impedance
Supply voltage
Audio signal frequency
Value of supply line decoupling capacitors
Source and sink currents of other channels
Pumping effects should be minimized to prevent the malfunctioning of the audio amplifier
and/or the voltage supply source. Amplifier malfunction due to the pumping effect can
trigger UVP, OVP or UBP.
The most effective way to avoid pumping effects is to connect the TDA8954 in a mono
full-bridge configuration. In the case of stereo single-ended applications, it is advised to
connect the inputs in anti-phase (see
Section 8.5 on page 14). The power supply can also
be adapted; for example, by increasing the values of the supply line decoupling
capacitors.
14.7 Application schematic
Notes on the application schematic:
Connect a solid ground plane around the switching amplifier to avoid emissions
Place 100 nF capacitors as close as possible to the TDA8954 power supply pins
Connect the heatsink to the ground plane or to VSSPn using a 100 nF capacitor
Use a thermally conductive, electrically non-conductive, Sil-Pad between the
TDA8954 heat spreader and the external heatsink
The heat spreader of the TDA8954 is internally connected to VSSA
Use differential inputs for the most effective system level audio performance with
unbalanced signal sources. In case of hum due to floating inputs, connect the
shielding or source ground to the amplifier ground.
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TDA8954_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 24 December 2009 27 of 46
NXP Semiconductors
TDA8954
2 × 210 W class-D power amplifier
(1) The value of C
PROT
can be in the range 10 pF to 220 pF (see Section 8.4.2)
Fig 13. Typical application diagram
010aaa559
C
IN1
IN1P
IN1
+
+
IN2
IN1M
SGND
2
3
19
22
21
20 18
470 nF
470 nF
C
IN2
C
IN3
IN2P
IN2M
470 nF
470 nF
C
IN4
220 nF
V
DD
V
SS
177
V
SS
VDDA
VSSA
PROT
13
14
15
V
SS
VSSP2
OUT2
BOOT2
16
V
DD
VDDP2
n.c.
C
VDDA
220 nF
C
VSSA
100 nF
C
VDDP2
15 nF
C
BO2
100 nF
C
VSSP2
100 nF
C
VP2
V
SS
V
SS
V
SS
V
DD
V
DD
V
DD
+
+
11
VSSP1
8
VDDP1
23
MODE
mode
control
1
OSC
6
4
DIAG1
5
OSCREF
DIAG2
100 nF
C
VDDP1
100 nF
C
VSSP1
100 nF
C
VP1
C
PROT
(1)
V
SS
12
STABI
C
STAB
470 nF
R
OSC
30 kΩ
10
9
OUT1
BOOT1
15 nF
C
BO1
L
LC1
R
VDDA
10 Ω
R
VSSA
10 Ω
C
VP
22 μF
C
VDDP3
470 μF
C
VSSP3
470 μF
SGND
V
DD
V
SS
V
DD
V
DD
V
SS
V
SS
R
SN1
10 Ω
R
SN2
10 Ω
C
SN2
220 pF
C
SN1
220 pF
C
SN4
220 pF
C
LC1
C
LC2
C
SN3
220 pF
R
ZO2
22 Ω
C
ZO2
100 nF
R
ZO1
22 Ω
C
ZO1
100 nF
LOAD L
LC
C
LC
3 Ω to 6 Ω 15 μH 680 nF
4 Ω to 8 Ω 22 μH 470 nF
SINGLE-ENDED
OUTPUT FILTER VALUES
TDA8954J
L
LC2
SGND
mode control
mute/
operating
10 μF
5.6 kΩ
+
5 V
470 Ω
standby/
operating
5.6 kΩ
T2
HFE > 80
T1
HFE > 80
470 kΩ
+
5 V
470 kΩ
10 kΩ10 kΩ
V
PU
V
PU
R
PU1
10 kΩ
R
PU2
10 kΩ

TDA8954J/N1,112

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
Audio Amplifiers 2-CH 210 W class-D power amplifier
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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