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TDA8954J/N1,112

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P39P40-P42P43-P45P46-P46
TDA8954_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 24 December 2009 31 of 46
NXP Semiconductors
TDA8954
2 × 210 W class-D power amplifier
V
DD
= 41 V, V
SS
= −41, f
osc
= 325 kHz (external 650 kHz oscillator), 2 × 4 Ω SE configuration.
Channel B S/N (dB).
Fig 20. Channel separation as a function of frequency, SE configuration with 2 × 4 Ω load
V
DD
= 39 V, V
SS
= −39, f
osc
= 325 kHz (external 650 kHz oscillator), 2 × 3 Ω SE configuration.
Channel B S/N (dB).
Fig 21. Channel separation as a function of frequency, SE configuration with 2 × 3 Ω load
010aaa604
fi (Hz
10 10
5
10
4
10
2
10
3
−60
−40
−80
−20
0
Chan sep
(dB)
−100
010aaa605
fi (Hz)
10 10
5
10
4
10
2
10
3
−60
−40
−80
−20
0
Chan sep
(dB)
−100
TDA8954_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 24 December 2009 32 of 46
NXP Semiconductors
TDA8954
2 × 210 W class-D power amplifier
f
i
= 1 kHz; f
osc
= 325 kHz (external 650 kHz oscillator).
(1) 2 × 3 Ω SE configuration; V
DD
= 39 V; V
SS
= −39 V.
(2) 2 × 4 Ω SE configuration; V
DD
= 41 V; V
SS
= −41 V.
(3) 2 × 6 Ω SE configuration; V
DD
= 41 V; V
SS
= −41 V.
Fig 22. Power dissipation as a function of output power per channel, SE configuration
f
i
= 1 kHz, f
osc
= 325 kHz (external 650 kHz oscillator).
(1) 2 × 6 Ω SE configuration; V
DD
= 41 V; V
SS
= −41 V.
(2) 2 × 4 Ω SE configuration; V
DD
= 41 V; V
SS
= −41 V.
(3) 2 × 3 Ω SE configuration; V
DD
= 39 V; V
SS
= −39 V.
Fig 23. Efficiency as a function of output power per channel, SE configuration
010aaa606
P
o
(W/channel)
10
−2
10
3
10
2
10
−1
110
20
40
60
P
D
(W)
0
(1)
(2)
(3)
P
o
(W/channel)
0 250200100
(1)
(2)
(3)
15050
010aaa607
40
60
20
80
100
Efficiency
(%)
0
TDA8954_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 24 December 2009 33 of 46
NXP Semiconductors
TDA8954
2 × 210 W class-D power amplifier
Infinite heat sink used.
f
i
= 1 kHz, f
osc
= 325 kHz (external 650 kHz oscillator).
(1) THD + N = 10 %, 2 × 3 Ω.
(2) THD + N = 10 %, 2 × 4 Ω
(1) THD + N = 0.5 %, 2 × 3 Ω
(2) THD + N = 0.5 %, 2 × 4 Ω.
Fig 24. Output power as a function of supply voltage, SE configuration
Infinite heat sink used.
f
i
= 1 kHz, f
osc
= 325 kHz (external 650 kHz oscillator).
(1) THD + N = 10 %, 8 Ω.
(2) THD + N = 0.5 %, 8 Ω.
Fig 25. Output power as a function of supply voltage, BTL configuration
(1)
(2)
(3)
(4)
Vp ±(V)
12.5 42.532.522.517.5 37.527.5
010aaa608
100
150
50
200
250
Po
(W)
0
(1)
(2)
Vp ±(V)
12.5 42.532.522.517.5 37.527.5
010aaa609
200
300
100
400
500
Po
(W)
0
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TDA8954J/N1,112

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Buy TDA8954J/N1,112
Manufacturer:
NXP Semiconductors
Description:
Audio Amplifiers 2-CH 210 W class-D power amplifier
Lifecycle:
New from this manufacturer.
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