AD7705/AD7706
Rev. C | Page 7 of 44
Parameter B Version
1
Unit Conditions/Comments
POWER REQUIREMENTS
V
DD
Voltage 2.7 to 3.3 V min to V max For specified performance
Power Supply Currents
17
Digital I/Ps = 0 V or V
DD
, external MCLK IN and CLKDIS = 1
0.32 mA max BUF bit = 0, f
CLKIN
= 1 MHz, gains of 1 to 128
0.6 mA max BUF bit = 1, f
CLKIN
= 1 MHz, gains of 1 to 128
0.4 mA max BUF bit = 0, f
CLKIN
= 2.4576 MHz, gains of 1 to 4
0.6 mA max BUF bit = 0, f
CLKIN
= 2.4576 MHz, gains of 8 to 128
0.7 mA max BUF bit = 1, f
CLKIN
= 2.4576 MHz, gains of 1 to 4
1.1 mA max BUF bit = 1, f
CLKIN
= 2.4576 MHz, gains of 8 to 128
V
DD
Voltage 4.75 to 5.25 V min to V max For specified performance
Power Supply Currents
17
Digital I/Ps = 0 V or V
DD
, external MCLK IN and CLKDIS = 1
0.45 mA max BUF bit = 0, f
CLKIN
= 1 MHz, gains of 1 to 128
0.7 mA max BUF bit = 1, f
CLKIN
= 1 MHz, gains of 1 to 128
0.6 mA max BUF bit = 0, f
CLKIN
= 2.4576 MHz, gains of 1 to 4
0.85 mA max BUF bit = 0, f
CLKIN
= 2.4576 MHz, gains of 8 to 128
0.9 mA max BUF bit = 1, f
CLKIN
= 2.4576 MHz, gains of 1 to 4
1.3 mA max BUF bit = 1, f
CLKIN
= 2.4576 MHz, gains of 8 to 128
Standby (Power-Down) Current
18
16 μA max External MCLK IN = 0 V or V
DD
, V
DD
= 5 V, see Figure 12
8 μA max External MCLK IN = 0 V or V
DD
, V
DD
= 3 V
Power Supply Rejection
19, 20
dB typ
1
Temperature range is −40°C to +85°C.
2
These numbers are established from characterization or design data at initial product release.
3
A calibration is effectively a conversion; therefore, these errors are of the order of the conversion noise shown in Table 5 and Table 7. This applies after calibration at
the temperature of interest.
4
Recalibration at any temperature removes these drift errors.
5
Positive full-scale error includes zero-scale errors (unipolar offset error or bipolar zero error) and applies to both unipolar and bipolar input ranges.
6
Full-scale drift includes zero-scale drift (unipolar offset drift or bipolar zero drift) and applies to both unipolar and bipolar input ranges.
7
Gain error does not include zero-scale errors. It is calculated as (full-scale error – unipolar offset error) for unipolar ranges and (full-scale error - bipolar zero error) for
bipolar ranges.
8
Gain drift does not include unipolar offset drift or bipolar zero drift. It is effectively the drift of the part if only zero-scale calibrations are performed.
9
This common-mode voltage range is allowed, provided that the input voltage on analog inputs is not more positive than V
DD
+ 30 mV or more negative than
GND − 100 mV. Parts are functional with voltages down to GND − 200 mV, but with increased leakage at high temperatures.
10
The AD7705/AD7706 can tolerate absolute analog input voltages down to GND − 200 mV, but the leakage current increases.
11
The analog input voltage range on AIN(+) is given with respect to the voltage on AIN(−) on the AD7705, and with respect to the voltage of the COMMON input on the
AD7706. The absolute voltage on the analog inputs should not be more positive than V
DD
+ 30 mV, or more negative than GND − 100 mV for specified performance.
Input voltages of GND − 200 mV can be accommodated, but with increased leakage at high temperatures.
12
V
REF
= REFIN(+) − REFIN(−).
13
These logic output levels apply to the MCLK OUT only when it is loaded with one CMOS load.
14
Sample tested at 25°C to ensure compliance.
15
After calibration, if the analog input exceeds positive full scale, the converter outputs all 1s. If the analog input is less than negative full scale, the device outputs all 0s.
16
These calibration and span limits apply, provided that the absolute voltage on the analog inputs does not exceed V
DD
+ 30 mV or go more negative than
GND 100 mV. The offset calibration limit applies to both the unipolar zero point and the bipolar zero point.
17
When using a crystal or ceramic resonator across the MCLK pins as the clock source for the device, the V
DD
current and power dissipation varies depending on the
crystal or resonator type (see Clocking and Oscillator Circuit section).
18
If the external master clock continues to run in standby mode, the standby current increases to 150 μA typical at 5 V and 75 μA at 3 V. When using a crystal or ceramic
resonator across the MCLK pins as the clock source for the device, the internal oscillator continues to run in standby mode, and the power dissipation depends on the
crystal or resonator type (see Standby Mode section).
19
Measured at dc and applies in the selected pass band. PSRR at 50 Hz exceeds 120 dB, with filter notches of 25 Hz or 50 Hz. PSRR at 60 Hz exceeds 120 dB, with filter
notches of 20 Hz or 60 Hz.
20
PSRR depends on both gain and V
DD
, as follows:
Gain 1 2 4 8 to 128
V
DD
= 3 V 86 78 85 93
V
DD
= 5 V 90 78 84 91
AD7705/AD7706
Rev. C | Page 8 of 44
TIMING CHARACTERISTICS
V
DD
= 2.7 V to 5.25 V; GND = 0 V; f
CLKIN
= 2.4576 MHz; Input Logic 0 = 0 V, Logic 1 = V
DD
, unless otherwise noted.
Table 2. Timing Characteristics
1, 2
Parameter
Limit at T
MIN
, T
MAX
(B Version)
Unit Conditions/Comments
f
CLKIN
3, 4
400 kHz min Master clock frequency (crystal oscillator or externally supplied)
2.5 MHz max For specified performance
t
CLKIN LO
0.4 × t
CLKIN
ns min Master clock input low time, t
CLKIN
= 1/f
CLKIN
t
CLKIN HI
0.4 × t
CLKIN
ns min Master clock input high time
t
1
500 × t
CLKIN
ns nom
DRDY
high time
t
2
100 ns min
RESET
pulse width
Read Operation
t
3
0 ns min
DRDY
to CS setup time
t
4
120 ns min
CS
falling edge to SCLK rising edge setup time
t
5
5
0 ns min SCLK falling edge to data valid delay
80 ns max V
DD
= 5 V
100 ns max V
DD
= 3.0 V
t
6
100 ns min SCLK high pulse width
t
7
100 ns min SCLK low pulse width
t
8
0 ns min
CS
rising edge to SCLK rising edge hold time
t
9
6
10 ns min Bus relinquish time after SCLK rising edge
60 ns max V
DD
= 5 V
100 ns max V
DD
= 3.0 V
t
10
100 ns max
SCLK falling edge to DRDY
high
7
Write Operation
t
11
120 ns min
CS
falling edge to SCLK rising edge setup time
t
12
30 ns min Data valid to SCLK rising edge setup time
t
13
20 ns min Data valid to SCLK rising edge hold time
t
14
100 ns min SCLK high pulse width
t
15
100 ns min SCLK low pulse width
t
16
0 ns min
CS
rising edge to SCLK rising edge hold time
1
Sample tested at 25°C to ensure compliance. All input signals are specified with t
R
= t
F
= 5 ns (10% to 90% of V
DD
) and timed from a voltage level of 1.6 V.
2
See Figure 19 and Figure 20.
3
The f
CLKIN
duty cycle range is 45% to 55%. f
CLKIN
must be supplied whenever the AD7705/AD7706 are not in standby mode. If no clock is present, the devices can draw
higher current than specified, and possibly become uncalibrated.
4
The AD7705/AD7706 are production tested with f
CLKIN
at 2.4576 MHz (1 MHz for some I
DD
tests). They are guaranteed by characterization to operate at 400 kHz.
5
These numbers are measured with the load circuit of Figure 2 and defined as the time required for the output to cross the V
OL
or V
OH
limits.
6
These numbers are derived from the measured time taken by the data output to change 0.5 V when loaded with the circuit of Figure 2. The measured number is then
extrapolated back to remove effects of charging or discharging the 50 pF capacitor. This means that the times quoted in the timing characteristics are the true bus
relinquish times of the part and as such are independent of external bus loading capacitances.
7
DRDY
returns high upon completion of the first read from the device after an output update. The same data can be reread while
DRDY
is high, but care should be
taken that subsequent reads do not occur close to the next output update.
TO OUTPUT
PIN
50pF
I
SINK
(800μA AT V
DD
= 5V
100μA AT V
DD
= 3V)
1.6V
I
SOURCE
(200μA AT V
DD
= 5V
100mA AT V
DD
= 3V)
01166-002
Figure 2. Load Circuit for Access Time and Bus Relinquish Time
AD7705/AD7706
Rev. C | Page 9 of 44
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 3.
Parameters Ratings
V
DD
to GND −0.3 V to +7 V
Analog Input Voltage to GND −0.3 V to V
DD
+ 0.3 V
Reference Input Voltage to GND −0.3 V to V
DD
+ 0.3 V
Digital Input Voltage to GND −0.3 V to V
DD
+ 0.3 V
Digital Output Voltage to GND −0.3 V to V
DD
+ 0.3 V
Operating Temperature Range
Commercial (B Version) −40°C to + 85°C
Storage Temperature Range −65°C to + 150°C
Junction Temperature 150°C
PDIP Package, Power Dissipation 450 mW
θ
JA
Thermal Impedance 105°C/W
Lead Temperature (Soldering, 10 sec) 260°C
SOIC Package, Power Dissipation 450 mW
θ
JA
Thermal Impedance 75°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) 215°C
Infrared (15 sec) 220°C
SSOP Package, Power Dissipation 450 mW
θ
JA
Thermal Impedance 139°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) 215°C
Infrared (15 sec) 220°C
ESD Rating >4000 V
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.

AD7706BRZ

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Analog to Digital Converters - ADC 3V/5V 1mW 3-Ch Pseudo Diff 16-Bit
Lifecycle:
New from this manufacturer.
Delivery:
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