BGW200EG_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 18 July 2007 55 of 76
NXP Semiconductors
BGW200EG
IEEE 802.11b System-in-Package
14.2 Transmitter
Table 70. Transmitter characteristics
All values at nominal supply voltage; T
amb
= 25
°
C; channel 6; unless otherwise stated.
Symbol Parameter Conditions Min Typ Max Unit
Linear output power; see
Figure 25 to Figure 26
P
o
output power meets FCC restricted band
specifications
1 Mbit/s and 2 Mbit/s 12.6 16.1 18.4 dBm
5.5 Mbit/s and 11 Mbit/s 14.3 17.6 20.1 dBm
Transmit spectrum mask; see
Figure 27 to Figure 28
ACPR adjacent channel power
ratio
typical linear output power;
f
lo
–22MHz<f<f
lo
– 11 MHz and
f
lo
+11MHz<f<f
lo
+ 22 MHz; RMS
detection
1 Mbit/s and 2 Mbit/s - 32 - dBr
5.5 Mbit/s and 11 Mbit/s - 33 - dBr
ACPR
alt
alternate adjacent
channel power ratio
typical linear output power;
f<f
lo
– 22 MHz and f > f
lo
+ 22 MHz;
RMS detection
1 Mbit/s and 2 Mbit/s - 51 - dBr
5.5 Mbit/s and 11 Mbit/s - 55 - dBr
Transmit modulation accuracy
EVM error vector magnitude typical linear output power; as defined
in IEEE 802.11b - 1999 specification
section 18.4.7.8
1 Mbit/s - 16 - %
2 Mbit/s - 19 - %
5.5 Mbit/s - 17 - %
11 Mbit/s - 17 35 %
Transmit power-on and power-down ramp
t
r(pu)
power-up rise time for 10 % to 90 % output power; typical
linear output power
- 1.2 - µs
t
f(pd)
power-down fall time for 90 % to 10 % output power; typical
linear output power
- 0.13 - µs
Other spectral parameters
P
L(fc)
/P
tx(tot)
center frequency power
leakage relative to the
overall transmit power
typical linear output power; 2 Mbit/s - 20 15 dB
α
2H
second harmonic level typical linear output power; 1 MHz
resolution bandwidth; peak detection
- 32 - dBm
α
3H
third harmonic level typical linear output power; 1 MHz
resolution bandwidth; peak detection
- 40 - dBm
N
WB
wideband noise 15 dBm output power
in frequency range 869 MHz to
1.990 GHz
- 135 - dBm/Hz
in frequency range 2.110 GHz to
2.170 GHz
- 130 - dBm/Hz
BGW200EG_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 18 July 2007 56 of 76
NXP Semiconductors
BGW200EG
IEEE 802.11b System-in-Package
a. 11 Mbit/s modulation in channel 1 b. 11 Mbit/s modulation in channel 11
(1) V
DD
= 3.0 V
(2) V
DD
= 2.85 V
(3) V
DD
= 2.7 V
Fig 25. Output power at gain setting CFh as a function of temperature
001aad213
T
amb
(°C)
40 1106010
14
16
18
20
P
o
(dBm)
12
(1)
(2)
(3)
001aad214
T
amb
(°C)
40 1106010
14
16
18
20
12
(1)
(2)
(3)
P
o
(dBm)
a. 1 Mbit/s modulation in channel 1 b. 11 Mbit/s modulation in channel 1
(1) V
DD
= 3.0 V
(2) V
DD
= 2.85 V
(3) V
DD
= 2.7 V
Fig 26. Output power at gain setting AFh as a function of temperature
001aad215
T
amb
(°C)
40 1106010
14
16
18
20
12
(1)
(2)
(3)
P
o
(dBm)
001aad216
T
amb
(°C)
40 1106010
14
16
18
20
12
(1)
(2)
(3)
P
o
(dBm)
BGW200EG_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 18 July 2007 57 of 76
NXP Semiconductors
BGW200EG
IEEE 802.11b System-in-Package
a. 11 Mbit/s modulation in channel 1 b. 11 Mbit/s modulation in channel 11
(1) V
DD
= 2.7 V
(2) V
DD
= 2.85 V
(3) V
DD
= 3.0 V
Fig 27. Adjacent channel power ratio at gain setting CFh as a function of temperature
001aad217
T
amb
(°C)
40 1106010
33
32
34
31
30
ACPR
(dBr)
35
(1)
(2)
(3)
001aad218
T
amb
(°C)
40 1106010
33
32
34
31
30
35
(1)
(3)
ACPR
(dBr)
(2)
a. 11 Mbit/s modulation in channel 1 b. 11 Mbit/s modulation in channel 11
(1) V
DD
= 3.0 V
(2) V
DD
= 2.85 V
(3) V
DD
= 2.7 V
Fig 28. Alternate adjacent channel power ratio at gain setting CFh as a function of temperature
001aad219
T
amb
(°C)
40 1106010
55
53
51
49
57
(1)
(2)
(3)
ACPR
alt
(dBr)
001aad220
T
amb
(°C)
40 1106010
55
53
51
49
57
(1)
(2)
(3)
ACPR
alt
(dBr)

BGW200EG/01,518

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
IC RF TXRX+MCU WIFI 68LFLGA
Lifecycle:
New from this manufacturer.
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