32
AT49LD3200(B)
1940B–FLASH–11/01
l
Program Cycle Waveforms
Sector Erase Cycle Waveforms
Notes: 1. The Precharge command is optional. A Precharge command (CS, RAS, MR = L) during Program and Sector Erase cycles
(WE
= L) will be treated as NOP, and the number of clock cycles between the bus cycle and the Precharge command or vice
versa should be “Don’t Care”.
2. For boot block programming, RA = CA = A
0
~ A
12
and be held valid throughout program cycle; DQM should be held “H” dur-
ing the four-bus cycle command operation.
3. For boot block erasing, SA = X; DQM should be held “H” during the six-bus cycle command operation.
3-volt Program and Erase Cycle Characteristics
Symbol Parameter Typ Max Units
t
PGM
Word/Double Word Programming Time 50 600 µs
t
EC
Sector/Boot Block Erase Cycle Time 2.0/300 seconds/ms
t
BBL
Boot Block Lockout Enable Time 10 ms
I
CC2
V
CC
Current during Program and Erase Cycle 150 mA
High-speed 12-volt Program and Erase Cycle Characteristics
Symbol Parameter Typ Max Units
t
PGM
Word/Double Word Programming Time 15 200 µs
t
EC
Sector/Boot Block Erase Cycle Time 1.2/200 seconds/ms
I
CC3
V
CC
Current During Program and Erase Cycle 75 mA
I
PP3
V
PP
Current During Program and Erase Cycle 75 mA
CS
PROGRAM CYCLE
CLK
WE
RAS
CAS
AA
55
55
2A
AA
55
RA
CA
DATA
AA
55
A0
D
IN
ADDR
PRECHARGE COMMAND
t
PGM
PRECHARGE COMMAND PRECHARGE COMMAND PRECHARGE COMMAND
CS
SECTOR ERASE CYCLE
CLK
WE
RAS
CAS
AA
55
55
2A
AA
55
DATA
AA
55
80
AA
ADDR
t
EC
PRECHARGE
COMMAND
AA
55
55 2A SA X
55
30
PRECHARGE
COMMAND
PRECHARGE
COMMAND
PRECHARGE
COMMAND
PRECHARGE
COMMAND
PRECHARGE
COMMAND
