Instructions M95160-x, M95080-x
22/49 Doc ID 8028 Rev 11
6.5 Read from Memory Array (READ)
As shown in Figure 11., to send this instruction to the device, Chip Select (S) is first driven
low. The bits of the instruction byte and address bytes are then shifted in, on Serial Data
Input (D). The address is loaded into an internal address register, and the byte of data at
that address is shifted out, on Serial Data Output (Q).
If Chip Select (S
) continues to be driven low, the internal address register is automatically
incremented, and the byte of data at the new address is shifted out.
When the highest address is reached, the address counter rolls over to zero, allowing the
Read cycle to be continued indefinitely. The whole memory can, therefore, be read with a
single READ instruction.
The Read cycle is terminated by driving Chip Select (S
) high. The rising edge of the Chip
Select (S
) signal can occur at any time during the cycle.
The first byte addressed can be any byte within any page.
The instruction is not accepted, and is not executed, if a Write cycle is currently in progress.
Figure 11. Read from Memory Array (READ) sequence
1. Depending on the memory size, as shown in Table 7., the most significant address bits are Don’t Care.
C
D
AI01793D
S
Q
15
21 345678910 2021222324252627
1413 3210
28 29 30
76543 1 7
0
High Impedance
Data Out 1
Instruction 16-Bit Address
0
MSB
MSB
2
31
Data Out 2
M95160-x, M95080-x Instructions
Doc ID 8028 Rev 11 23/49
6.6 Write to Memory Array (WRITE)
As shown in Figure 12., to send this instruction to the device, Chip Select (S) is first driven
low. The bits of the instruction byte, address byte, and at least one data byte are then shifted
in, on Serial Data Input (D).
The instruction is terminated by driving Chip Select (S
) high at a byte boundary of the input
data. The self-timed Write cycle, triggered by the Chip Select (S
) rising edge, continues for a
period t
W
(as specified in Table 22. to Table 26.), at the end of which the Write in Progress
(WIP) bit is reset to 0.
In the case of Figure 12., Chip Select (S
) is driven high after the eighth bit of the data byte
has been latched in, indicating that the instruction is being used to write a single byte. If,
though, Chip Select (S
) continues to be driven low, as shown in Figure 13., the next byte of
input data is shifted in, so that more than a single byte, starting from the given address
towards the end of the same page, can be written in a single internal Write cycle.
Each time a new data byte is shifted in, the least significant bits of the internal address
counter are incremented. If the number of data bytes sent to the device exceeds the page
boundary, the internal address counter rolls over to the beginning of the page, and the
previous data there are overwritten with the incoming data. (The page size of these devices
is 32 bytes).
The instruction is not accepted, and is not executed, under the following conditions:
if the Write Enable Latch (WEL) bit has not been set to 1 (by executing a Write Enable
instruction just before)
if a Write cycle is already in progress
if the device has not been deselected, by Chip Select (S) being driven high, at a byte
boundary (after the eighth bit, b0, of the last data byte that has been latched in)
if the addressed page is in the region protected by the Block Protect (BP1 and BP0)
bits.
Note: The self-timed write cycle t
W
is internally executed as a sequence of two consecutive
events: [Erase addressed byte(s)], followed by [Program addressed byte(s)]. An erased bit is
read as “0” and a programmed bit is read as “1”.
Figure 12. Byte Write (WRITE) sequence
1. Depending on the memory size, as shown in Table 7., the most significant address bits are Don’t Care.
C
D
AI01795D
S
Q
15
21 345678910 2021222324252627
1413 3210
28 29 30
High Impedance
Instruction 16-Bit Address
0
765432 0
1
Data Byte
31
Instructions M95160-x, M95080-x
24/49 Doc ID 8028 Rev 11
Figure 13. Page Write (WRITE) sequence
1. Depending on the memory size, as shown in Table 7., the most significant address bits are Don’t Care.
C
D
AI01796D
S
3433 35 36 37 38 39 40 41 42 44 45 46 4732
C
D
S
15
21 345678910 2021222324252627
1413 3210
28 29 30
Instruction 16-Bit Address
0
765432 0
1
Data Byte 1
31
43
765432 0
1
Data Byte 2
765432 0
1
Data Byte 3
65432 0
1
Data Byte N

M95080-RMB6TG

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
EEPROM 16 Kbit and 8 Kbit
Lifecycle:
New from this manufacturer.
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