28
IDT72T6360 2.5V, SEQUENTIAL FLOW-CONTROL DEVICE
x9, x18, x36 BIT WIDE CONFIGURATION
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
FEBRUARY 10, 2009
DC ELECTRICAL CHARACTERISTICS
(Commercial: VCC = 2.5V ± 0.125V, TA = 0°C to +70°C;Industrial: VCC = 2.5V ± 0.125V, TA = -40°C to +85°C)
General DC Test Conditions
Measurements taken with VCC = 2.625V, OE = HIGH, WCLK = RCLK = 16.7MHz, MCLK = 33.3MHz
Data toggles alternately at 1/2 WCLK and RCLK frequency
0.4 < VIN < VCC, 0.4 < VOUT < VCC
Outputs are unloaded (IOUT = 0)
NOTES:
1. These parameters are compliant under JEDEC standard for SSTL_2 (JESD8-9A). These parameters are classified as SSTL_2 Class I output buffers under section 3.2.1 of
JESD8-9A.
2. ICC (active current) is measured with MCLK = 33.3MHz, RCLK = WCLK = 16.7MHz, and alternate 101010 data pattern toggling on the outputs.
3. ISB (standby current) is measured with MCLK = RCLK = WCLK = 0MHz with no output data toggling.
4. VSDREF is the VREF of the DDR SDRAM. It is not to be confused with the VREF of the SFC.
5. The maximum value may not represent the maximum current dissipated from the SFC. ICC values are dependent upon various factors that include: VCC, temperature,
capacitive load, frequency, bus-width, and output switching characteristics. For calculating ICC with specific parameters, please contact IDT technical support for
assistance.
Symbol Parameter Min. Max. Unit
ICC1
(2)
Active VCC current 650 mA
ICC2
(2)
Active AVCC current 18 mA
ICC3
(2)
Active VDDQ current 1 mA
ISB1
(3)
Standby VCC current 600 mA
I
SB2
(3)
Standby VDDQ current 1 mA
POWER CONSUMPTION
I/O Type Symbol Parameter Min. Max. Unit
SFC Input I
LI Input leakage current -10 10 µA
(LVTTL) V
IH Input High Voltage VDDQ = 3.3V 2.0 5.5 V
V
DDQ = 2.5V 1.7 3.45 V
V
IL Input Low Voltage VDDQ = 3.3V 0.8 V
VDDQ = 2.5V -0.3 0.7 V
SFC Output ILO Output leakage current -10 10 µA
(LVTTL) V
OH Read/Write interface output logic “1” voltage with IOH1 VDDQ = 3.3V VDDQ – 0.4 V
VDDQ = 2.5V VDDQ – 0.4 V
V
OL Read/Write interface output logic “0” voltage with IOL1 VDDQ = 3.3V 0.4 V
VDDQ = 2.5V 0.4 V
I
OH Read/Write interface output high current (source current) VDDQ = 3.3V -2 mA
VDDQ = 2.5V -8 mA
I
OL Read/Write interface output low current (sink current) VDDQ = 3.3V 8 mA
VDDQ = 2.5V 8 mA
DDR SDRAM I
OH Memory interface output high current (source current) -7.6 mA
I/O (SSTL_2)
(1)
IOL Memory interface output low current (sink current) 7.6 mA
V
IH Memory Interface Input High Voltage 1.7 3.0 V
V
IL Memory Interface Input Low Voltage -0.3 0.7 V
V
OH Memory Interface Output High Voltage 1.5 V
VOL Memory Interface Output Low Voltage 1.00 V
29
IDT72T6360 2.5V, SEQUENTIAL FLOW-CONTROL DEVICE
x9, x18, x36 BIT WIDE CONFIGURATION
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
FEBRUARY 10, 2009
AC TEST LOADS
Figure 5b. Lumped Capacitive Load, Typical Derating
Figure 5a. AC Test Load
6357 drw13
50
V
DDQ
/2
I/O
Z0 = 50
10pF
6357 drw13a
6
5
4
3
2
1
20 30 50 80 100 200
Capacitance (pF)
t
CD
(Typical, ns)
Input Pulse Levels GND to 2.5V
Input Rise/Fall Times 1ns
Input Timing Reference Levels 1.25V
Output Reference Levels 1.25V
2.5V LVTTL AC TEST CONDITIONS
Input Pulse Levels GND to 3.0V
Input Rise/Fall Times 3ns
Input Timing Reference Levels 1.5V
Output Reference Levels 1.5V
3.3V LVTTL AC TEST CONDITIONS
Input Pulse Levels GND to 2.5V
Input Rise/Fall Times 1ns
Input Timing Reference Levels 1.25V
Output Reference Levels 1.25V
2.5V SSTL AC TEST CONDITIONS
AC TEST CONDITIONS
30
IDT72T6360 2.5V, SEQUENTIAL FLOW-CONTROL DEVICE
x9, x18, x36 BIT WIDE CONFIGURATION
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
FEBRUARY 10, 2009
AC ELECTRICAL CHARACTERISTICS
(1)
SYNCHRONOUS TIMING
(Commercial: VCC = 2.5V ± 5%, TA = 0°C to +70°C;Industrial: VCC = 2.5V ± 5%, TA = -40°C to +85°C)
NOTES:
1. All AC timings apply to both Standard IDT mode and First Word Fall Through mode.
2. Industrial temperature range product for the 7.5ns speed grade is available as a standard device. All other speed grades are available by special order.
Commercial Com'l & Ind'l
(2)
IDT72T6360L6 IDT72T6360L7-5
Symbol Parameter Min. Max. Min. Max. Unit
fS Synchronous Clock Cycle Frequency 166 133 MHz
tA Data Access Time 1 4 1 5 ns
tCLK Clock Cycle Time 6 7.5 ns
tCLKH Clock High Time 2.7 3.5 ns
tCLKL Clock Low Time 2.7 3.5 ns
tDS Data Setup Time 2 2.5 ns
tDH Data Hold Time 0.5 0.5 ns
tENS Enable Setup Time 2 2.5 ns
tENH Enable Hold Time 0.5 0.5 ns
tRS Reset Pulse Width 10 10 ns
tRSU Reset Setup Time 15 15 ns
tRSH Reset Hold Time 10 10 ns
tPL Reset to PLL Lock 20 20 µs
tRSF Reset to Flag and Output 15 15 ns
tOHZ Output enable to High-Z 1 4 1 5 ns
tOE Output Enable Valid 1 4 1 5 ns
fMC Master Clock Cycle Frequency 32 34 32 34 MHz
tMCYC Master Clock Cycle Time 29.4 31.3 29.4 31.3 ns
tMCKH Master Clock Cycle HIGH 0.45 0.55 0.45 0.55 tMCYC
tMCKL Master Clock Cycle LOW 0.45 0.55 0.45 0.55 tMCYC
fSC Serial Clock Cycle Frequency 10 10 MHz
tSCLK Serial Clock Cycle 100 100 ns
tSCLKH Serial Clock HIGH 45 45 ns
tSCLKL Serial Clock LOW 45 45 ns
tSDS Serial Data Setup 15 15 ns
tSDH Serial Data Hold 5 5 ns
tSENS Serial Enable Setup 5 5 ns
tSENH Serial Enable Hold 5 5 ns
tASO Serial Output Data Access Time 20 20 ns
tWFFs Write Clock to Synchronous FF/IR —45ns
tREFs Read Clock to Synchronous EF/OR —45ns
tPAFs WCLK to Synchronous PAF —45ns
tPAEs RCLK to Synchronous PAE —45ns
tSKEW1 Skew time between RCLK and WCLK for EF/OR and FF/IR in SDR 4 5 ns
tSKEW2 Skew time between RCLK and WCLK for PAE/PAF 5—7ns
tWCSS WCS Setup Time 2 2.5 ns
tWCSH WCS Hold Time 0.5 0.5 ns
fC1 Memory Clock Cycle Frequency at 166MHz 160 170 MHz
fC2 Memory Clock Cycle Frequency at 133MHz 128 136 128 136 MHz
tCK1 Memory Clock Cycle Time at 166MHz 6.2 5.9 ns
tCK2 Memory Clock Cycle Time at 133MHz 7.8 7.3 7.8 7.3 ns
tCKH1 Memory Clock Cycle HIGH at 166MHz 0.45 0.55 tCK1
tCKH2 Memory Clock Cycle HIGH at 133MHz 0.45 0.55 0.45 0.55 tCK2
tCKL1 Memory Clock Cycle LOW at 166MHz 0.45 0.55 tCK1
tCKL2 Memory Clock Cycle LOW at 133MHz 0.45 0.55 0.45 0.55 tCK2

72T6360L6BB

Mfr. #:
Manufacturer:
Description:
IC SEQUENTIAL FLOW-CTRL 324PBGA
Lifecycle:
New from this manufacturer.
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