PartNumber | IPL65R165CFDAUMA1 | IPL65R165CFDAUMA2 | IPL65R190E6AUMA1 |
Description | MOSFET HIGH POWER_LEGACY | MOSFET | MOSFET N-Ch 650V 20.2A VSON-4 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | VSON-4 | - | VSON-4 |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | - | 650 V |
Id Continuous Drain Current | 21.3 A | - | 20.2 A |
Rds On Drain Source Resistance | 149 mOhms | - | 190 mOhms |
Vgs th Gate Source Threshold Voltage | 3.5 V | - | 3 V |
Vgs Gate Source Voltage | 20 V | - | 20 V |
Qg Gate Charge | 86 nC | - | 73 nC |
Minimum Operating Temperature | - 40 C | - | - 40 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 195 W | - | 151 W |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | CoolMOS | - | CoolMOS |
Packaging | Reel | Reel | Reel |
Height | 1.1 mm | - | 1.1 mm |
Length | 8 mm | - | 8 mm |
Series | CoolMOS CFDA | - | CoolMOS E6 |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 8 mm | - | 8 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 5.6 ns | - | 10 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 7.6 ns | - | 11 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 52.8 ns | - | 112 ns |
Typical Turn On Delay Time | 12.4 ns | - | 12 ns |
Part # Aliases | IPL65R165CFD SP000949254 | - | IPL65R190E6AUMA1 SP001074938 |