UJA1066_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 17 March 2010 43 of 70
NXP Semiconductors
UJA1066
High-speed CAN fail-safe system basis chip
[1] Only relevant if V
WAKE
< V
GND
− 0.3 V; current will flow into pin GND.
[2] In accordance with IEC 60747-1. An alternative definition of virtual junction temperature is: T
vj
=T
amb
+P
d
× R
th(vj-amb)
, where R
th(vj-amb)
is a fixed value to be used for the calculation of T
vj
. The rating for T
vj
limits the allowable combinations of power dissipation (P
d
) and
ambient temperature (T
amb
).
[3] Human Body Model (HBM): C = 100 pF; R = 1.5 kΩ.
[4] ESD performance according to IEC 61000-4-2 (C = 150 pF, R = 330 Ω) of pins CANH, CANL, SPLIT, WAKE, BAT42 and V3 with respect
to GND was verified by an external test house. Following results were obtained:
a) Equal or better than ±4 kV (unaided)
b) Equal or better than ±20 kV (using external ESD protection: NXP Semiconductors PESD1CAN diode)
[5] Machine Model (MM): C = 200 pF; L = 0.75 μH; R = 10 Ω.
V
DC(n)
DC voltage on pins
V1 and V2 −0.3 +5.5 V
V3 and SYSINH −1.5 V
BAT42
+ 0.3 V
INH/LIMP −0.3 V
BAT42
+ 0.3 V
SENSE −0.3 V
BAT42
+ 1.2 V
WAKE −1.5 +60 V
CANH, CANL and SPLIT with respect to any other pin −60 +60 V
TXDC, RXDC, SDO, SDI, SCK,
SCS, RSTN, INTN and EN
−0.3 V
V1
+ 0.3 V
TEST −0.3 +15 V
V
trt
transient voltage at pins CANH and CANL; in
accordance with
ISO 7637-3
−150 +100 V
I
WAKE
DC current at pin WAKE
[1]
−15 - mA
T
stg
storage temperature −55 +150 °C
T
amb
ambient temperature −40 +125 °C
T
vj
virtual junction temperature
[2]
−40 +150 °C
V
esd
electrostatic discharge voltage HBM
[3]
at pins CANH, CANL,
SPLIT, WAKE, BAT42,
V3, SENSE; with respect
to GND
[4]
−8.0 +8.0 kV
at any other pin −2.0 +2.0 kV
MM; at any pin
[5]
−200 +200 V
Table 25. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages are referenced to GND.
Symbol Parameter Conditions Min Max Unit
