System-on-Chip LH79524/LH79525
Data Sheet for Rev. A.1 Silicon Version 1.0 31
Figure 8. ADC Transfer Characteristics
1,015
1
2
3
4
5
6
7
8
9
1018
1019
1020
1021
1022
1023
1024
1,016 1,017 1,018 1,019
LH79525-2
1,020 1,021 1,022 1,023 1,024123456789
INTEGRAL
NON-LINEARITY
CENTER OF STEP
ACTUAL
TRANSFER CURVE
IDEAL
TRANSFER CURVE
CENTER OF A
STEP OF THE ACTUAL
TRANSFER CURVE
OFFSET
ERROR
OFFSET
ERROR
LSB
DNL
GAIN
ERROR
LH79524/LH79525 System-on-Chip
32 Version 1.0 Data Sheet for Rev. A.1 Silicon
External Memory Controller Waveforms
The External Memory Controller (EMC) handles
transactions with both static and dynamic memory.
STATIC MEMORY WAVEFORMS
This section illustrates static memory transaction
waveforms. Each wait state is one HCLK period.
nWAIT Input
The EMC’s Static Memory Controller supports an
nWAIT input that can be used by an external device to
extend the wait time during a memory access. The
SMC samples nWAIT at the beginning of at the begin-
ning of each system clock cycle. The system clock
cycle in which the nCSx signal is asserted counts as
the first wait state. See Figure 9 through Figure 18.
Read and Write Waveforms
Figure 15 shows the Read cycle with zero wait
states. As shown in the figure, SWAITOENx and
SWAITRDx are programmed to 0 for minimum Read
cycle time.
The zero programmed into the SWAITRDx indicates
that the read occurs with zero wait states, on the first
rising edge following Address Valid. After a small prop-
agation delay, nOE is deasserted (as is nCSx), latching
the data into the SoC. The address line is held valid
one more HCLK period (‘C’ in the figure). Thus, the
minimum Read cycle is two HCLK periods.
Figure 16 shows the minimum write cycle time with
both SWAITWRx and SWAITWENx programmed to
zero. The write access time is determined by the number
of wait states programmed in the SWAITWRx register.
In Figure 16, nCSx is asserted coincident (following
a small propagation delay) with Valid Address. Data
becomes valid another small propagation delay later.
Unlike Read transactions, nWE (or nBLEx) assertion is
always delayed one HCLK cycle. The nBLEx signal has
the same timing as nWE for write to 8-bit devices that
use the byte lane enables instead of the write enables.
The nWE (or nBLEx) signal remains asserted for one
HCLK cycle when the nWE (or nBLEx) signal is deas-
serted and the data is latched into the external memory
device. Valid address is held for one additional cycle
before deassertion (‘C’ in the figure), as is the Chip
Select. The minimum Write cycle is three HCLK periods.
Read wait state programming uses the SWAITRDx
register. Figure 17 shows the results of programming
SWAITRDx to 0x3, setting the EMC for three wait
states. The deassertion of nOE is delayed from the first
rising HCLK edge following Valid Address, as in Figure
15, to the fourth rising edge, a delay of 3 HCLK periods.
Figure 18 shows the results of programming the
SWAITWRx and SWAITWENx registers for two Write
wait states: register SWAITWENx = 0x0, and SWAIT-
WRx = 0x2. Assertion of nCSx precedes nWE (nBLEx)
by one HCLK period. Then, instead of the nWE
(nBLEx) signal deasserting one HCLK period after
assertion, it is delayed two wait states and the signal
deasserts on the rising edge following two wait states.
Chapter 7 of the User’s Guide has detailed register
descriptions and additional programming examples.
System-on-Chip LH79524/LH79525
Data Sheet for Rev. A.1 Silicon Version 1.0 33
NOTES:
1. The timing relationship is specified as a cycle-based timing. Variations caused by clock jitter, power rail noise, and I/O condtioning will cause
these timings to vary nominally. It is recommended that designers add a small margin to avoid possible corner-case conditions.
2. The Read Wait States register (SWAITRDx) must be set to a minimum value of 3.
3. For each rising clock edge (HCLK) that the assertion of nWAIT lags the assertion of nCSx, another read wait state (SWAITRDx) must be
added to the minimum requirement.
4. nWAIT delay cycles are not added for all nWAIT assertions sampled prior to WST-3. These nWAIT assertions are ignored.
5. nWAIT delay cycles are added for all nWAIT assertions sampled from WST-3 until the de-assertion of nWAIT. nWAIT delay cycles are added
once the wait state countdown has reached WST-1.
6. Once nWAIT is sampled high, the current memory transaction is queued to complete.
7. Since static and dynamic memory cannot be accessed at the same time, any prolonged access (either due to nWAIT or the Extended Wait
Register) that causes an SDRAM refresh failure may cause SDRAM data to be lost.
8. Timing assumes Output Enable Delay register (SWAITOENx) is programmed to 0.
Figure 9. nWAIT Read Sequence (SWAITRDx = 3)
Table 15. nWAIT Read Sequence Parameter Definitions
PARAMETER DESCRIPTION MIN. MAX. UNIT
1
tDA_nCS(x)_nWAIT Delay from nCS(x) assertion to nWAIT assertion 0 16,365 HCLK periods
tDD_nWAIT_nCS(x) Delay from nWAIT deassertion to nCS(x) deassertion 4 HCLK periods
tDD_nWAIT_nOE Delay from nWAIT deassertion to nOE deassertion 4 HCLK periods
tA_nWAIT Assertion time of nWAIT 2 HCLK periods
tDA_nCS(x)_nWAIT
HCLK
nCS(x)
nOE
nWAIT
NOTES:
SQ: nWAIT Sampled and Queued
SI: nWAIT Sampled and Ignored
tA_nWAIT
SQ-4 SQ-3 SQ-2 SQ-1 SQ-0
tDD_nWAIT_nCS(x)
tDD_nWAIT_nOE
LH79525-133
WST-2
DELAY
WST-3
DELAY
WST-1
DELAY
SQ-4
nWAIT
DELAY
SQ-3
nWAIT
DELAY
SQ-2
nWAIT
DELAY
SQ-1
nWAIT
DELAY
SQ-0
nWAIT
DELAY
WST-0
DELAY
Transaction
Sequence

LH79524N0F100A0

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Description:
IC MCU 32BIT ROMLESS 208CABGA
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New from this manufacturer.
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