Operating Features
Page Programming
To program one data byte, two commands are required: WRITE ENABLE, which is one
byte, and a PAGE PROGRAM sequence, which is four bytes plus data. This is followed by
the internal PROGRAM cycle of duration
t
PP. To spread this overhead, the PAGE PRO-
GRAM command allows up to 256 bytes to be programmed at a time (changing bits
from 1 to 0), provided they lie in consecutive addresses on the same page of memory. To
optimize timings, it is recommended to use the PAGE PROGRAM command to program
all consecutive targeted bytes in a single sequence than to use several PAGE PROGRAM
sequences with each containing only a few bytes.
Sector Erase, Bulk Erase
The PAGE PROGRAM command allows bits to be reset from 1 to 0. Before this can be
applied, the bytes of memory need to have been erased to all 1s (FFh). This can be ach-
ieved a sector at a time using the SECTOR ERASE command, or throughout the entire
memory using the BULK ERASE command. This starts an internal ERASE cycle of dura-
tion
t
SSE,
t
SE, or
t
BE. The ERASE command must be preceded by a WRITE ENABLE
command.
Polling during a Write, Program, or Erase Cycle
An improvement in the time to complete the following commands can be achieved by
not waiting for the worst case delay (
t
W,
t
PP,
t
SE, or
t
BE).
• WRITE STATUS REGISTER
• PROGRAM
• ERASE (SECTOR ERASE, BULK ERASE)
The write in progress (WIP) bit is provided in the status register so that the application
program can monitor this bit in the status register, polling it to establish when the pre-
vious WRITE cycle, PROGRAM cycle, or ERASE cycle is complete.
Fast Program/Erase Mode
The fast program/erase mode is used to speed up programming/erasing. The device en-
ters this mode during the PAGE PROGRAM, SECTOR ERASE, or BULK ERASE operations
whenever a voltage equal to V
PPH
is applied to the W#/V
PP
pin.
The use of this mode requires specific operating conditions in addition to the normal
ones (V
CC
must be within the normal operating range):
• The voltage applied to the W#/V
PP
pin must be equal to V
PPH
• Ambient temperature, T
A
must be 25 °C ±10 °C
• The cumulated time during which W#/V
PP
is at V
PPH
should be less than 80 hours
Active Power and Standby Power
When chip select (S#) is LOW, the device is selected, and in the active power mode.
When S# is HIGH, the device is deselected, but could remain in the active power mode
until all internal cycles have completed (PROGRAM, ERASE, WRITE STATUS REGIS-
M25P128 Serial Flash Embedded Memory
Operating Features
CCMTD-1718347970-10412
m25p_128.pdf - Rev. A 11/16 EN
10
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