AC Characteristics
In the following AC specifications, output High-Z is defined as the point where data out
is no longer driven.
Table 12: AC Measurement Conditions
Symbol Parameter Min Max Unit
C
L
Load capacitance 30 30 pF
Input rise and fall times 5 ns
Input pulse voltages 0.2 V
CC
0.8 V
CC
V
Input timing reference voltages 0.3 V
CC
0.7 V
CC
V
Output timing reference voltages V
CC
/2 V
CC
/2 V
Figure 20: AC Measurement I/O Waveform
Input and output
timing reference levels
Input levels
0.8V
CC
0.2V
CC
0.7V
CC
0.3V
CC
0.5V
CC
Table 13: Capacitance
Symbol Parameter Test condition Min Max Unit Notes
C
OUT
Output capacitance (DQ1) V
OUT
= 0 V 8 pF 1
C
IN
Input capacitance (other pins) V
IN
= 0 V 6 pF
Note:
1. Values are sampled only, not 100% tested, at T
A
= 25°C and a frequency of 20 MHz.
M25P128 Serial Flash Embedded Memory
AC Characteristics
CCMTD-1718347970-10412
m25p_128.pdf - Rev. A 11/16 EN
34
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
Table 14: AC Specifications
Symbol Alt. Parameter Min Typ Max Unit Notes
f
C
f
C Clock frequency for all commands (except READ) D.C. 54 MHz 1
f
R Clock frequency for READ command D.C. 33 MHz 1
t
CH
t
CLH Clock HIGH time 9 ns 2
t
CL
t
CLL Clock LOW time 9 ns 2
t
CLCH Clock rise time (peak to peak) 0.1 V/ns 3, 4
t
CHCL Clock fall time (peak to peak) 0.1 V/ns 3, 4
t
SLCH
t
CSS S# active setup time (relative to C) 4 ns
t
CHSL S# not active hold time (relative to C) 4 ns
t
DVCH
t
DSU Data In setup time 2 ns
t
CHDX
t
DH Data In hold time 3 ns
t
CHSH S# active hold time (relative to C) 4 ns
t
SHCH S# not active setup time (relative to C) 4 ns
t
SHSL
t
CSH S# deselect time 50 ns
t
SHQZ
t
DIS Output disable time 8 ns 3
t
CLQV
t
V Clock LOW to output valid 8 ns
t
CLQX
t
HO Output hold time 1 ns
t
HLCH HOLD# setup time (relative to C) 4 ns
t
CHHH HOLD# hold time (relative to C) 4 ns
t
HHCH HOLD# setup time (relative to C) 4 ns
t
CHHL HOLD# hold time (relative to C) 4 ns
t
HHQX
t
LZ HOLD# to output Low-Z 8 ns 3
t
HLQZ
t
HZ HOLD# to output High-Z 8 ns 3
t
WHSL Write protect setup time 20 ns 5
t
SHWL Write protect hold time 100 ns 5
t
VPPHSL Enhanced program supply voltage HIGH to chip select
LOW
200 ns 6
Notes:
1. D.C. stands for direct current. (
f
C = 0)
2. The
t
CH and
t
CL signal values must be greater than or equal to 1/
f
C.
3. Signal values are guaranteed by characterization, not 100% tested in production.
4. Signal clock rise and fall time values are expressed as a slew rate.
5. Signal values are only applicable as a constraint for a WRITE STATUS REGISTER command
when SRWD bit is set at 1.
6. V
PPH
should be kept at a valid level until the PROGRAM or ERASE operation has comple-
ted and its result (success or failure) is known.
M25P128 Serial Flash Embedded Memory
AC Characteristics
CCMTD-1718347970-10412
m25p_128.pdf - Rev. A 11/16 EN
35
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
Table 15: AC Specifications, Command Times
Symbol Parameter Min Typ Max Units Notes
t
W WRITE STATUS REGISTER cycle time 1.3 15 ms
t
PP PAGE PROGRAM cycle time (256 bytes) 0.5 5 ms 1
t
PP PAGE PROGRAM cycle time (n bytes) int (n/8) x
0.015
5 ms 1, 2
t
PP PAGE PROGRAM cycle time (V
PP
= V
PPH
,
256 bytes)
0.4 5 ms 1, 3
t
SE SECTOR ERASE cycle time 1.6 3 (after 10K
ERASE cycles)
5 (after 50K
ERASE cycles)
6 (after 100K
ERASE cycles)
s
t
SE SECTOR ERASE cycle time (V
PP
= V
PPH
) 1.6 3 (after 10K
ERASE cycles)
5 (after 50K
ERASE cycles)
6 (after 100K
ERASE cycles)
s
t
BE BULK ERASE cycle time 130 250 s
t
BE BULK ERASE cycle time (V
PP
= V
PPH
) 130 250 s
Notes:
1. When using the PAGE PROGRAM command to program consecutive bytes, optimized
timings are obtained in one sequence that includes all the bytes rather than in several
sequences of only a few bytes (1 < n < 256).
2. int(A) corresponds to the upper integer part of A. For example, int(12/8) = 2 and
int(32/8) = 4.
3. Signal values are guaranteed by characterization, not 100% tested in production.
Figure 21: Serial Input Timing
C
DQ0
S#
MSB IN
DQ1
tDVCH
high impedance
LSB IN
tSLCH
tCHDX
tCHCL
tCLCH
tSHCH
tSHSL
tCHSHtCHSL
M25P128 Serial Flash Embedded Memory
AC Characteristics
CCMTD-1718347970-10412
m25p_128.pdf - Rev. A 11/16 EN
36
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.

M25P128-VME6GB

Mfr. #:
Manufacturer:
Micron
Description:
IC FLASH 128M SPI 54MHZ 8VDFPN
Lifecycle:
New from this manufacturer.
Delivery:
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