Configuration and Memory Map
Memory Configuration and Block Diagram
Each page of memory can be individually programmed; bits are programmed from 1 to
0. The device is sector or bulk-erasable, but not page-erasable; bits are erased from 0 to
1. The memory is configured as follows:
16,777,216 bytes (8 bits each)
64 sectors (2Mb, 262,144 bytes each)
65,536 pages (256 bytes each)
Figure 7: Block Diagram
HOLD#
S#
W#/V
PP
Control Logic
High Voltage
Generator
I/O Shift Register
Address Register
and Counter
256 Byte
Data Buffer
256 bytes (page size)
X Decoder
Y Decoder
C
DQ0
DQ1
Status
Register
00000h
FFFFFFh
000FFh
64 OTP bytes
M25P128 Serial Flash Embedded Memory
Configuration and Memory Map
CCMTD-1718347970-10412
m25p_128.pdf - Rev. A 11/16 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
Memory Map – 128Mb Density
Table 3: Sectors 63:0
Sector
Address Range
Start End
63 FC0000h FFFFFFh
62 F80000h FBFFFFh
48 C00000h C3FFFFh
47 BC0000h BFFFFFh
32 800000h 83FFFFh
31 7C0000h 7FFFFFh
16 400000h 43FFFFh
15 3C0000h 3FFFFFh
0 000000h 03FFFFh
M25P128 Serial Flash Embedded Memory
Memory Map – 128Mb Density
CCMTD-1718347970-10412
m25p_128.pdf - Rev. A 11/16 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
Command Set Overview
All commands, addresses, and data are shifted in and out of the device, most significant
bit first.
Serial data inputs DQ0 and DQ1 are sampled on the first rising edge of serial clock (C)
after chip select (S#) is driven LOW. Then, the one-byte command code must be shifted
in to the device, most significant bit first, on DQ0 and DQ1, each bit being latched on
the rising edges of C.
Every command sequence starts with a one-byte command code. Depending on the
command, this command code might be followed by address or data bytes, by address
and data bytes, or by neither address or data bytes. For the following commands, the
shifted-in command sequence is followed by a data-out sequence. S# can be driven
HIGH after any bit of the data-out sequence is being shifted out.
READ DATA BYTES (READ)
READ DATA BYTES at HIGHER SPEED
READ STATUS REGISTER
READ IDENTIFICATION
For the following commands, S# must be driven HIGH exactly at a byte boundary. That
is, after an exact multiple of eight clock pulses following S# being driven LOW, S# must
be driven HIGH. Otherwise, the command is rejected and not executed.
PAGE PROGRAM
SECTOR ERASE
BULK ERASE
WRITE STATUS REGISTER
WRITE ENABLE
WRITE DISABLE
All attempts to access the memory array are ignored during a WRITE STATUS REGISTER
command cycle, a PROGRAM command cycle, or an ERASE command cycle. In addi-
tion, the internal cycle for each of these commands continues unaffected.
M25P128 Serial Flash Embedded Memory
Command Set Overview
CCMTD-1718347970-10412
m25p_128.pdf - Rev. A 11/16 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.

M25P128-VME6GB

Mfr. #:
Manufacturer:
Micron
Description:
IC FLASH 128M SPI 54MHZ 8VDFPN
Lifecycle:
New from this manufacturer.
Delivery:
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