Initial Delivery Status
The device is delivered as the following:
Memory array erased: all bits are set to 1 (each byte contains FFh)
Status register contains 00h (all status register bits are 0)
M25P128 Serial Flash Embedded Memory
Initial Delivery Status
CCMTD-1718347970-10412
m25p_128.pdf - Rev. A 11/16 EN
31
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
Maximum Ratings and Operating Conditions
Note: Stressing the device beyond the absolute maximum ratings may cause permanent
damage to the device. These are stress ratings only and operation of the device beyond
any specification or condition in the operating sections of this datasheet is not recom-
mended. Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
Table 8: Absolute Maximum Ratings
Symbol Parameter Min Max Units Notes
T
STG
Storage temperature –65 150 °C
V
IO
Input and output voltage (with respect to
ground)
–0.5 V
CC
+ 0.6 V 1
V
CC
Supply voltage –0.2 4.0 V
V
PP
FAST PROGRAM and ERASE voltage –0.2 10.0 V
V
ESD
Electrostatic discharge voltage (Human Body
model)
–2000 2000 V 2
Notes:
1. The minimum voltage may reach the value of –2V for no more than 20ns during transi-
tions; the maximum may reach the value of V
CC
+ 2V for no more than 20ns during tran-
sitions.
2. The V
ESD
signal: JEDEC Std JESD22-A114A (C1 = 100pF, R1 = 1500Ω, R2 = 500Ω).
Table 9: Operating Conditions
Symbol Parameter Min Typ Max Unit
V
CC
Supply voltage 2.7 3.6 V
V
PPH
Supply voltage on W#/V
PP
pin for FAST PRO-
GRAM and ERASE
8.5 9.5 V
T
A
Ambient operating temperature –40 85 °C
T
AVPP
Ambient operating temperature for FAST
PROGRAM and ERASE
15 25 35 °C
M25P128 Serial Flash Embedded Memory
Maximum Ratings and Operating Conditions
CCMTD-1718347970-10412
m25p_128.pdf - Rev. A 11/16 EN
32
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
Electrical Characteristics
Table 10: DC Current Specifications
Note 1 applies to the entire table.
Symbol Parameter Test Conditions Min Max Units Notes
I
LI
Input leakage current ±2 µA
I
LO
Output leakage current ±2 µA
I
CC1
Standby current S# = V
CC
, V
IN
= V
SS
or V
CC
100 µA
I
CC3
Operating current (READ) C = 0.1 V
CC
/0.9 V
CC
at 50 MHz,
DQ1 = Open
6 mA
C = 0.1 V
CC
/0.9 V
CC
at 20 MHz,
DQ1 = Open
4 mA
I
CC4
Operating current
(PAGE PROGRAM)
S# = V
CC
20 mA
I
CC5
Operating current
(WRITE STATUS REGISTER)
S# = V
CC
20 mA
I
CC6
Operating current
(SECTOR ERASE)
S# = V
CC
20 mA
I
CC7
Operating current
(BULK ERASE)
S# = V
CC
20 mA
I
CCPP
Operating current
(FAST PROGRAM/ERASE)
S# = V
CC
, V
pp
= V
PPH
20 mA 1
I
PP
V
PP
operating current
(FAST PROGRAM/ERASE)
S# = V
CC
, V
pp
= V
PPH
20 mA 1
Note:
1. Characterized only.
Table 11: DC Voltage Specifications
Symbol Parameter Test Conditions Min Max Units
V
IL
Input LOW voltage –0.5 0.3 V
CC
V
V
IH
Input HIGH voltage 0.7 V
CC
V
CC
+ 0.2 V
V
OL
Output LOW voltage I
OL
= 1.6mA 0.4 V
V
OH
Output HIGH voltage I
OH
= –100µA V
CC
– 0.2 V
M25P128 Serial Flash Embedded Memory
Electrical Characteristics
CCMTD-1718347970-10412
m25p_128.pdf - Rev. A 11/16 EN
33
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.

M25P128-VME6GB

Mfr. #:
Manufacturer:
Micron
Description:
IC FLASH 128M SPI 54MHZ 8VDFPN
Lifecycle:
New from this manufacturer.
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