TC58NVG1S3ETAI0
2012-09-01C
19
Auto-Program Operation with Data Cache Timing Diagram (3/3)
(Note) Make sure to terminate the operation with 80h-10h- command sequence.
If the operation is terminated by 80h-15h command sequence, monitor I/O 6 (Ready / Busy) by
issuing Status Read command (70h) and make sure the previous page program operation is
completed. If the page program operation is completed issue FFh reset before next operation.
70h
t
CLS
t
ALS
t
DS
t
DH
WE
CLE
CE
ALE
RE
BY/RY
: V
IH
or V
IL
t
CLH
t
CH
t
CS
t
CLS
t
DS
t
DH
t
ALH
I/O
: Do not input data while data is being output.
t
CS
2
t
DH
t
DS
t
DH
t
PROG (*1)
t
WB
t
DS
t
ALH
t
ALS
D
IN
2111
Continued from 2 of last page
(
*1) t
PROG
: Since the last page programming by 10h command is initiated after the previous cache
program, the t
PROG
during cache programming is given by the following equation.
t
PROG
= t
PROG
of the last page + t
PROG
of the previous page A
= (command input cycle + address input cycle + data input cycle time of the last page)
If “A” exceeds the t
PROG
of previous page, t
PROG
of the last page is t
PROG
max.
80h
CA0
to 7
CA8
to 11
PA0
to 7
PA8
to 15
PA16
D
IN
N
D
IN
N
+
1
10h Status
TC58NVG1S3ETAI0
2012-09-01C
20
Multi-Page Program Operation with Data Cache Timing Diagram (1/4)
Continues to 1 of next page
t
CLS
t
ALS
t
DS
t
DH
80h
WE
CLE
CE
ALE
RE
BY/RY
: V
IH
or V
IL
t
CLH
t
CH
t
CS
t
CLS
t
DS
t
DH
t
ALH
I/O
: Do not input data while data is being output.
t
CS
t
DH
t
DS
t
DH
t
DCBSYW1
D
IN
N
D
IN
N+1
t
WB
81h
t
DS
11h
t
ALH
t
ALS
D
IN
2111
1
PA16
CA0
to 7
CA0
to 7
CA8
to 11
PA0
to 7
PA8
to 15
Page Address M
District-0
TC58NVG1S3ETAI0
2012-09-01C
21
Multi-Page Program Operation with Data Cache Timing Diagram (2/4)
: V
IH
or V
IL
: Do not input data while data is being output.
t
CLS
t
ALS
t
DS
t
DH
CA0
to 7
81h
WE
CLE
CE
ALE
RE
BY/RY
t
CLH
t
CH
t
CS
t
CLS
t
DS
t
DH
t
ALH
I/O
PA0
to 7
CA8
to 11
t
CS
1
Continued from 1 of last page
t
DH
t
DS
t
DH
t
DCBSYW2
D
IN
N
D
IN
N+1
t
WB
80h
t
DS
15h
t
ALH
t
ALS
D
IN
2111
PA16
2
PA8
to 15
CA0
to 7
Repeat a max of 63 times (in order to program pages 0 to 62 of a block).
Page Address M
District-1

TC58NVG1S3ETAI0

Mfr. #:
Manufacturer:
Toshiba Memory
Description:
NAND Flash 3.3V 2Gb 43nm SLC NAND (EEPROM)
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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