 |  | | |
| PartNumber | SIHA30N60AEL-GE3 | SIHA690N60E-GE3 | SIHA4N80E-GE3 |
| Description | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | MOSFET E Series Power MOSFET | MOSFET 800V Vds 30V Vgs TO-220 FULLPAK |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-220FP-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 800 V |
| Id Continuous Drain Current | 28 A | 4.3 A | 4.3 A |
| Rds On Drain Source Resistance | 120 mOhms | 600 mOhms | 1.1 Ohms |
| Vgs th Gate Source Threshold Voltage | 2 V | 5 V | 2 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 10 V |
| Qg Gate Charge | 120 nC | 8 nC | 16 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 39 W | - | 69 W |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Series | EL | E | E |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 19 S | - | 1.5 S |
| Fall Time | 33 ns | 22 ns | 20 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 24 ns | 9 ns | 7 ns |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 79 ns | 19 ns | 26 ns |
| Typical Turn On Delay Time | 26 ns | 12 ns | 12 ns |
| Tradename | - | TrenchFET | - |
| Transistor Type | - | - | 1 N-Channel |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHB120N60E-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | |
| SIHB180N60E-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB100N60E-GE3 | MOSFET 650V Vds; 30V Vgs D2PAK (TO-263) | ||
| SIHB17N80E-GE3 | MOSFET 800V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB11N80E-GE3 | MOSFET 800V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHA30N60AEL-GE3 | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | ||
| SIHA6N80E-GE3 | MOSFET 800V Vds 30V Vgs TO-220 FULLPAK | ||
| SIHB16N50C-E3 | MOSFET N-Channel 500V | ||
| SIHB12N65E-GE3 | MOSFET 650V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB12N50E-GE3 | MOSFET 500V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB15N60E-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB12N60E-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB065N60E-GE3 | MOSFET 650V Vds; 30V Vgs D2PAK (TO-263) | ||
| SIHB15N65E-GE3 | MOSFET 650V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHA690N60E-GE3 | MOSFET E Series Power MOSFET | ||
| SIHB10N40D-GE3 | MOSFET 400V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHA6N65E-E3 | MOSFET 650V Vds 30V Vgs TO-220 FULLPAK | ||
| SIHB12N60ET1-GE3 | MOSFET N-Channel 600V | ||
| SIHB12N50C-E3 | MOSFET N-Channel 500V | ||
| SIHB12N60ET5-GE3 | MOSFET N-Channel 600V | ||
| SIHA4N80E-GE3 | MOSFET 800V Vds 30V Vgs TO-220 FULLPAK | ||
Vishay |
SIHB12N60E-GE3 | Darlington Transistors MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS | |
| SIHB12N65E-GE3 | IGBT Transistors MOSFET 650V 392mOhm@10V 12A N-Ch E-SRS | ||
| SIHB12N50C-E3 | IGBT Transistors MOSFET N-Channel 500V | ||
| SIHB15N50E-GE3 | IGBT Transistors MOSFET N-Channel 500V | ||
| SIHB12N50E-GE3 | IGBT Transistors MOSFET N-Channel 500V | ||
| SIHB15N65E-GE3 | RF Bipolar Transistors MOSFET 650V 280mOhm@10V 15A N-Ch E-SRS | ||
| SIHA30N60AEL-GE3 | MOSFET N-CHAN 600V TO-220 FULLPA | ||
| SIHB16N50C-E3 | MOSFET N-CH 500V 16A D2PAK | ||
| SIHB10N40D-GE3 | MOSFET N-CH 400V 10A DPAK | ||
| SIHB15N60E-GE3 | MOSFET N-CH 600V 15A DPAK | ||
| SIHA6N65E-E3 | MOSFET N-CHANNEL 650V 7A TO220 | ||
| SIHA4N80E-GE3 | MOSFET N-CHAN 800V FP TO-220 | ||
| SIHA6N80E-GE3 | MOSFET N-CHAN 800V TO-220FP | ||
| SIHB065N60E-GE3 | E Series Power MOSFET D2PAK (TO-263), 65 m @ 10V | ||
| SIHB100N60E-GE3 | E Series Power MOSFET D2PAK (TO-263), 100 m @ 10V | ||
| SIHB120N60E-GE3 | MOSFET N-CHAN 650V D2PAK (TO-263 | ||
| SIHB12N60ET1-GE3 | MOSFET N-CH 600V 12A TO263 | ||
| SIHB12N60ET5-GE3 | MOSFET N-CH 600V 12A TO263 | ||
| SIHB180N60E-GE3 | E Series Power MOSFET D2PAK (TO-263), 180 m @ 10V | ||
| SIHB15N60E-GE3-CUT TAPE | New and Original | ||
| SIHB10N40D | New and Original | ||
| SIHB11N80E | New and Original | ||
| SIHB12N50C | New and Original | ||
| SIHB12N60E | New and Original | ||
| SIHB12N60EGE3 | Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| SIHB12N65E | New and Original | ||
| SIHB15N60E | New and Original | ||
| SIHB15N60EGE3 | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| SIHB15N65E | New and Original |