UJA1069_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 28 October 2009 40 of 64
NXP Semiconductors
UJA1069
LIN fail-safe system basis chip
7. Limiting values
[1] Only relevant if V
WAKE
< V
GND
− 0.3 V; current will flow into pin GND.
[2] In accordance with IEC 60747-1. An alternative definition of virtual junction temperature is: T
vj
=T
amb
+P
d
× R
th(vj-amb)
, where R
th(vj-amb)
is a fixed value to be used for the calculation of T
vj
. The rating for T
vj
limits the allowable combinations of power dissipation (P
d
) and
ambient temperature (T
amb
).
[3] Human Body Model (HBM): C
HBM
= 100 pF; R
HBM
= 1.5 kΩ.
[4] Only applies for pin BAT42 if C
BAT42
(connected between pin BAT42 and GND) ≥ 10 nF; otherwise V
ESD
= ±4 kV for pin BAT42.
[5] ESD performance according to IEC 61000-4-2 (C
IEC
= 150 pF, R
IEC
= 330 Ω) of pins LIN, RTLIN, WAKE and BAT42 with respect to GND
was verified by an external test house. The following results were obtained:
a) Equal or better than ±4 kV (unaided)
b) Equal or better than ±20 kV for pin LIN (using external ESD protection: NXP Semiconductors PESD1LIN diode).
[6] Machine Model (MM): C
MM
= 200 pF; L
MM
= 0.75 µH; R
MM
=10Ω.
Table 24. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages are referenced to GND.
Symbol Parameter Conditions Min Max Unit
V
BAT42
BAT42 supply voltage −0.3 +60 V
load dump; t ≤ 500 ms - +60 V
V
BAT14
BAT14 supply voltage V
BAT42
≥ V
BAT14
− 1V
continuous −0.3 +33 V
load dump; t ≤ 500 ms - +45 V
V
DC(n)
DC voltage on pins
V1 −0.3 +5.5 V
V3 and SYSINH −1.5 V
BAT42
+ 0.3 V
INH/LIMP −0.3 V
BAT42
+ 0.3 V
SENSE −0.3 V
BAT42
+ 1.2 V
WAKE −1.5 +60 V
LIN and RTLIN with respect to any other pin −60 +60 V
TXDL, RXDL, SDO, SDI, SCK, SCS,
RSTN, INTN and EN
−0.3 V
V1
+ 0.3 V
TEST −0.3 +15 V
V
trt
transient voltage at pin LIN in accordance with
ISO 7637-3
−150 +100 V
I
WAKE
DC current at pin WAKE
[1]
−15 - mA
T
stg
storage temperature −55 +150 °C
T
amb
ambient temperature −40 +125 °C
T
vj
virtual junction temperature
[2]
−40 +150 °C
V
ESD
electrostatic discharge voltage HBM
[3]
at pins LIN, RTLIN,
WAKE, BAT42, V3,
SENSE; with respect to
GND
[4][5]
−8.0 +8.0 kV
at any other pin −2.0 +2.0 kV
MM; at any pin
[6]
−200 +200 V
