UJA1069_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 28 October 2009 46 of 64
NXP Semiconductors
UJA1069
LIN fail-safe system basis chip
LIN-bus line; pin LIN
V
o(dom)
LIN dominant output
voltage
Active mode;
V
BAT42
=7Vto18V;
LDC = 0; t < t
TXDL(dom)(dis)
;
V
TXDL
=0V;
R
BAT42-LIN
= 500
0 - 0.20 ×
V
BAT42
V
Active mode;
V
BAT42
=7.6Vto18V;
LDC = 1; t < t
TXDL(dom)(dis)
;
V
TXDL
=0V; I
LIN
=40mA
0.7 1.4 2.1 V
I
LIH
HIGH-level input
leakage current
V
LIN
=V
BAT42
; V
TXDL
=V
V1
10 0 +10 µA
V
BAT42
=8V;
V
LIN
=8Vto18V;
V
TXDL
=V
V1
10 0 +10 µA
I
LIL
LOW-level input
leakage current
V
BAT42
= 12 V; V
LIN
=0V;
V
TXDL
=V
V1
100 - - µA
I
o(sc)
short-circuit output
current
Active mode;
V
LIN
=V
BAT42
=12V;
V
TXDL
=0V;t<t
TXDL(dom)(dis)
;
LDC=0
27 40 60 mA
Active mode;
V
LIN
=V
BAT42
=18V;
V
TXDL
=0V;t<t
TXDL(dom)(dis)
;
LDC=0
40 60 90 mA
V
th(dom)
receiver dominant
state
V
BAT42
= 7 V to 27 V - - 0.4 ×
V
BAT42
V
V
th(reces)
receiver recessive
state
V
BAT42
= 7 V to 27 V 0.6 ×
V
BAT42
--V
V
th(hyst)
receiver threshold
voltage hysteresis
V
BAT42
= 7 V to 27 V 0.05 ×
V
BAT42
- 0.175 ×
V
BAT42
V
V
th(cen)
receiver threshold
voltage center
V
BAT42
= 7 V to 27 V 0.475 ×
V
BAT42
0.500 ×
V
BAT42
0.525 ×
V
BAT42
V
C
i
input capacitance
[2]
--10pF
I
L
leakage current V
LIN
=0Vto18V
V
BAT42
=0V 50 +5µA
V
GND
=V
BAT42
=12V 10 0 +10 µA
LIN-bus termination resistor connection; pin RTLIN
V
RTLIN
RTLIN output
voltage
Active mode; I
RTLIN
= 10 µA;
V
BAT42
= 7 V to 27 V
V
BAT42
1.0
V
BAT42
0.7
V
BAT42
0.2
V
Off-line mode;
I
RTLIN
= 10 µA;
V
BAT42
=7Vto27V
V
BAT42
1.2
V
BAT42
1.0
-V
V
RTLIN
RTLIN load
regulation
Active mode;
I
RTLIN
= 10 µAto10 mA;
V
BAT42
= 7 V to 27 V
- 0.65 2 V
Table 25. Static characteristics
…continued
T
vj
=
40
°
C to +150
°
C, V
BAT42
=5.5Vto52V;V
BAT14
=5.5Vto27V;V
BAT42
V
BAT14
1 V; unless otherwise specified. All
voltages are defined with respect to ground. Positive currents flow into the IC.
[1]
Symbol Parameter Conditions Min Typ Max Unit
UJA1069_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 28 October 2009 47 of 64
NXP Semiconductors
UJA1069
LIN fail-safe system basis chip
[1] All parameters are guaranteed over the virtual junction temperature range by design. Products are 100 % tested at 125 °C ambient
temperature on wafer level (pretesting). Cased products are 100 % tested at 25 °C ambient temperature (final testing). Both pretesting
and final testing use correlated test conditions to cover the specified temperature and power supply voltage range.
[2] Not tested in production.
I
RTLIN(pu)
RTLIN pull-up
current
Active mode;
V
RTLIN
=V
LIN
=0V;
t>t
LIN(dom)(det)
150 60 35 µA
Off-line mode;
V
RTLIN
=V
LIN
=0V;
t<t
LIN(dom)(det)
150 60 35 µA
I
LL
LOW-level leakage
current
Off-line mode;
V
RTLIN
=V
LIN
=0V;
t>t
LIN(dom)(det)
10 0 +10 µA
TEST input; pin TEST
V
th(TEST)
input threshold
voltage
for entering Software
development mode;
T
j
=25°C
158V
for entering Forced normal
mode; T
j
=25°C
2 10 13.5 V
R
(pd)TEST
pull-down resistor between pin TEST and GND 248k
Temperature detection
T
j(warn)
high junction
temperature warning
level
160 175 190 °C
Table 25. Static characteristics
…continued
T
vj
=
40
°
C to +150
°
C, V
BAT42
=5.5Vto52V;V
BAT14
=5.5Vto27V;V
BAT42
V
BAT14
1 V; unless otherwise specified. All
voltages are defined with respect to ground. Positive currents flow into the IC.
[1]
Symbol Parameter Conditions Min Typ Max Unit
UJA1069_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 28 October 2009 48 of 64
NXP Semiconductors
UJA1069
LIN fail-safe system basis chip
a. T
j
= 25 °C.
b. T
j
= 150 °C.
Fig 17. V1 output voltage (dropout) as a function of battery voltage
V
BAT14
(V)
2 76453
015aaa089
4
3
5
6
V
V1
(V)
2
I
V1
=
100 µA
50 mA
120 mA
250 mA
V
BAT14
(V)
2 76453
015aaa090
4
3
5
6
V
V1
(V)
2
I
V1
=
100 µA
50 mA
120 mA
250 mA

UJA1069TW/5V0/C/T,

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
LIN Transceivers IC LIN FAIL-SAFE
Lifecycle:
New from this manufacturer.
Delivery:
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