FDMS86350 - 80 V N-Channel PowerTrench® MOSFE

FDMS86350 - 80 V N-Channel PowerTrench® MOSFE

ON Semiconductor N-channel MOSFET is produced using ON Semiconductor's advanced Power Trench process that has been especially tailored to minimize on-state resistance, yet maintain superior switching performance.

Features

  • Max RDS(ON) = 2.4 mΩ at VGS = 10 V, ID = 25 A
  • Max RDS(ON) = 3.2 mΩ at VGS = 8 V, ID = 22 A
  • Advanced package and silicon combination for low RDS(ON) and high-efficiency 

 

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