This N-channel MOSFET is produced using ON Semiconductor advanced PowerTrench process that incorporates shielded gate technology. This process has been optimized for on-state resistance and maintains superior switching performance.
Features
Shielded gate MOSFET technology
Max RDS(ON) = 2.1 mΩ at VGS = 10 V, LD = 27 A
Max RDS(ON) = 3.1 mΩ at VGS = 4.5 V, LD = 22 A
High-performance technology for extremely-low RDS(ON)
