This N-channel MOSFET is produced using ON Semiconductor advanced PowerTrench process that incorporates shielded gate technology. This process has been optimized for on-state resistance and maintains superior switching performance.

• Shielded gate MOSFET technology
• Max R_DS(ON) = 2.1 mΩ at V_GS = 10 V, L_D = 27 A
• Max R_DS(ON) = 3.1 mΩ at V_GS = 4.5 V, L_D = 22 A
• High-performance technology for extremely-low R_DS(ON)
• Termination is lead-free
• 100% UIL tested
• RoHS-compliant