FDMC8360L N-Channel Shielded Gate Power Trench

FDMC8360L N-Channel Shielded Gate Power Trench&#17

This N-channel MOSFET is produced using ON Semiconductor advanced PowerTrench process that incorporates shielded gate technology. This process has been optimized for on-state resistance and maintains superior switching performance.

Features
  • Shielded gate MOSFET technology
  • Max RDS(ON) = 2.1 mΩ at VGS = 10 V, LD = 27 A
  • Max RDS(ON) = 3.1 mΩ at VGS = 4.5 V, LD = 22 A
  • High-performance technology for extremely-low RDS(ON)
  • Termination is lead-free
  • 100% UIL tested
  • RoHS-compliant

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