FDMC86340 80 V N-Channel Shielded Gate Power Trenc
This N-channel MOSFET is produced using ON Semiconductor advanced Power Trench process that incorporates shielded gate technology. This process has been optimized for the on-state resistance and yet maintains superior switching performance.
Features
Shielded gate MOSFET technology
Max RDS(ON) = 6.5 mΩ at VGS = 10 V, ID = 14 A
Max RDS(ON) = 8.5 mΩ at VGS = 8 V, ID = 12 A
High-performance technology for extremely-low RDS(ON)
