The SCT20N120 and SCT30N120 silicon-carbide power MOSFETs from STMicroelectronics bring advanced efficiency and reliability to a broader range of energy-conscious applications such as inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment.

ST is among the few vendors leading the development of robust and efficient silicon-carbide power semiconductors. The 1200 V SCT20N120 and SCT30N120 extend the family, with on-resistance (R_DS(ON)) better than 290 mΩ (better than 100 mΩ for the SCT30N120) all the way to the 200°C maximum operating junction temperature. Switching performance is also consistent over temperature thanks to highly stable turn-off energy (E_off) and gate charge (Q_g). The resulting low conduction and switching loss, combined with ultra-low leakage current, simplify thermal management and maximize reliability.

In addition to their lower energy losses, ST’s silicon-carbide MOSFETs permit switching frequencies at least three times higher than similar-rated silicon IGBTs. This enables designers to specify smaller external components and save size, weight, and bill-of-materials costs. The SCT20N120 and SCT30N120’s high-temperature capability helps to simplify cooling-system design in applications such as power modules for electric vehicles.

The SCT20N120 and SCT30N120 comes with the added advantage of ST’s proprietary HiP247™ package with enhanced thermal efficiency, which allows reliable operation up to 200°C while maintaining compatibility with the industry-standard TO-247 power-package outline.

Key Features

• Very-tight variation of on-resistance vs. temperature
• Slight variation of switching losses vs. temperature
• Very-high operating temperature capability (200°C)
• Very-fast and robust intrinsic body diode
• Low capacitance
• Easy to drive