ON Semiconductor N-channel MOSFETs are produced using its advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. The advanced PowerTrench process also incorporates shielded gate technology on select parts.
Features
- Provides 25°C TJ operating temperature increase when conforming to IPC9592, enabling up to 85% improvement in allowable MOSFET power dissipation
- Termination is lead-free and RoHS compliant
- MSL1 robust package design
- Enhances MTBF
- Advanced package and silicon combination for low RDS(ON)
- High performance technology for extremely low RDS(ON)
- Extended TJ rating to 175°C
- 100% UIL tested
Applications
- Ideal for industrial high ambient temperature and harsh environment applications
- ORing FET / load switching
- Primary DC-DC MOSFET
- Bridge topologies
- Load switch
- Secondary synchronous rectifier
- Synchronous rectifier
- Motor control switch
- DC-DC conversion
- Primary MOSFET
