Global Power Technologies Group introduces their silicon carbide power Schottky discrete diodes. The advantage of these products is improved circuit efficiency (lower overall cost), low switching losses, ease of paralleling devices without thermal runaway, smaller heat sink requirements, low reverse recovery current, low device capacitance, and low reverse leakage current at operating temperature. Customers will have a choice of 600 V, 650 V, 1200 V, and 1700 V products with current ranges from 3 A to 60 A: package styles TO-220, DPak, D2Pak, and TO- 247’s. All of these products are RoHS compliant.