VESD15A1-HD1-G4-08 BiAs Single-Line ESD Protection

By Vishay Semiconductor/Diodes Division 87

VESD15A1-HD1-G4-08 BiAs Single-Line ESD Protection

With a small 1.0 mm by 0.6 mm footprint and an extremely low profile of < 0.4 mm, the Vishay Semiconductor's VESD15A1-HD1-G4-08 is designed to reduce the board space required for ESD protection in portable electronics. For devices such as gaming systems, smartphones, and tablets, the diode offers a high isolation to ground characterized by a low leakage current of < 0.01 μA and low load capacitance of 45 pF at 0 V.

Any transient voltage signal exceeding the reverse breakdown voltage of 15.5 V minimum will be clamped and shorted to ground. Negative transient voltage signals drive the diode in the forward direction and are also clamped close below the ground level. The VESD15A1-HD1-G4-08 features maximum reverse and forward clamping voltages of 20 V and 1.3 V at 1 A, respectively.

Features and Benefits
  • Minimum 15.5 V reverse breakdown voltage
  • Low leakage current of <0.01 μA
  • Low load capacitance of 45 pF at 0 V
  • Maximum reverse clamping voltage of 20 V at 1 A
  • Maximum forward clamping voltage of 1.3 V at 1 A
  • Moisture sensitivity level (MSL) of 1 in accordance to J-STD-020
  • Ultra-compact LLP1006-2L package:
    • 1.0 mm by 0.6 mm footprint
    • Extremely low profile of <0.4 mm
  • Provides transient protection for one data line as per IEC 61000-4-2 at ± 30 kV (air and contact discharge)
  • Offers high surge current protection according to IEC 61000-4-5 of > 6 A
  • UL 94 V-0 flammability rating
  • NiPdAu (e4) pin plating prevents whisker growth
  • RoHS-compliant, halogen-free, and Vishay green
  • Soldering can be checked by standard vision inspection with no x-ray necessary

Applications

  • ESD protection in portable electronics:
    • Gaming systems
    • MP3 players
    • Smart phones
    • Tablets

 

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