High-Efficiency, 60 V, Single N-Channel MOSFETs

High-Efficiency, 60 V, Single N-Channel MOSFETs

ON Semiconductor expands its broad portfolio of power MOSFETs with new, high-efficiency, single N-channel devices targeted at data networking, telecommunications, and industrial applications.

These devices are capable of delivering incredibly low on-state resistance, RDS(ON) values, thereby minimizing conduction loss and improving overall operational efficiency levels. They also have very low gate capacitance (Ciss), down to 2, 164 pF, which ensures driver losses are kept as low as possible.

The NTMFS5C604NL, NTMFS5C612NL, and NTMFS5C646NL all have breakdown voltage ratings of 60 V. The maximum RDS(ON) of these devices is 1.2 mΩ, 1.5 mΩ, and 4.7 mΩ respectively, while their associated continuous drain currents are 287 A, 235 A, and 93 A. The 60 V devices are rated to operate at junction temperatures up to 175°C, thereby giving engineers greater thermal headroom for their designs.

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