The continuous growth of data traffic - driven by smartphones, wearables and applications such as virtual reality and the Internet of Things (IoT) - leads to increasing numbers of high-speed interfaces that typically require protection against ESD events. To address this demand, Toshiba Electronics Europe has released new ESD protection diodes based on its 4th generation ESD diode array process (EAP-IV), which uses Toshiba's proprietary snapback technology.

The DF2B5M4SL, DF2B6M4SL, DF10G5M4N, and DF10G6M4N offer protection for high-speed interfaces, including USB 3.1 applications. A choice of operating voltages (3.6 and 5.5 V) and packages (SOD962 and DFN10) provides flexible options for realizing ESD protection in a variety of designs.

Thanks to Toshiba’s new process, the four devices simultaneously deliver low capacitance, low dynamic resistance, and high ESD endurance. Minimum signal distortion of high-speed data signals is guaranteed by the ultra-low capacitance of 0.2 pF, while a typical dynamic resistance of R_DYN=0.5 Ω ensures low clamping voltages. High ESD protection levels are supported as electrostatic discharge voltages of at least ±20 kV are guaranteed, according to IEC61000-4-2.

The DF2BxM4SL devices are particularly suitable for mounting on high component density PCBs, as the SOD-962 package requires a footprint of only 0.62 x 0.32 mm, and can be placed close to ICs that need ESD protection. For DF10GxM4N types, the DFN10 package can be simply placed on top of a 4-bit bus line. This flow-through design supports simple bus routing on the PCB as no additional stubs are needed to connect single TVS diodes.

Toshiba also offers a variety of low-cost ESD diodes for less demanding applications, from USB and HDMI speeds to audio ports and push-button protection.