Toshiba has expanded its family of ultra-high-efficiency, low-voltage MOSFETs by adding 40 V and 45 V devices to the company’s existing lineup. All the devices will be available in ultra-compact, SOP advance package options that realize the low ON-resistance, low Q_OSS for increased efficiency in switching-mode power supplies used in base stations, servers, or industrial equipment.

Comprising one 40 V device and one 45 V device, the N-channel MOSFETs are based on Toshiba’s next-generation U-MOS IX-H trench semiconductor process. This process has been designed to deliver 'best-in-class' efficiency across a wide range of load conditions by driving down ON-resistance (R_DS(ON)) and improving switching efficiency by reducing output charge (Q_OSS).

The MOSFETs will help designers to reduce losses and board space in a variety of power management circuits including high side and low side switching in DC-DC conversion and secondary side synchronous rectification in AC-DC designs. The technologies are also ideal for motor control and for protection circuit modules in electronic equipment based on Lithium ion (Li-ion) batteries.

At a voltage (VGS) of 10 V, the maximum R_DS(ON) rating for the 40 V MOSFET is just 1.24 mΩ, while typical C_OSS is 1300 pF. The 45 V item offers R_DS(ON) and typical C_OSS ratings are 1.04 mΩ and  1860 pF. This ensures enhanced flexibility for optimizing performance in a given application.

The two UMOS IX-H MOSFETs are available in the low-profile surface-mount package SOP Advance. All the MOSFETs will operate with channel temperatures up to 175°C.