Alliance Memory's AS4C32M8D1, AS4C32M16D1A, AS4C64M8D1, and AS4C64M16D high-speed CMOS double data rate synchronous DRAMs (DDR SDRAM) feature densities of 256 MB, 512 MB, and 1 GB, respectively which adds to their existing DDR1 portfolio of 64 M (4 M x 16)/(2 M x 32) and 128 M (8 M x 16)/(4 M x 32) density offerings. The devices provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, medical, communications, and telecom products requiring high memory bandwidth, and they are particularly well-suited to high performance in PC applications.
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- Offered in the 60-ball 8 mm x 13 mm x 1.2 mm TFBGA package and the 66-pin TSOP II package with a 0.65 mm pin pitch
- Internally configured as four banks of 32 M word x 8-bits (AS4C32M8D1), 64 M word x 8-bits (AS4C64M8D1), and 64 M word x 16-bits (AS4C64M16D1) with a synchronous interface
- Available in commercial (0°C to +70°C) and industrial (-40°C to +85°C) temperature ranges
- Programmable read or write burst lengths of 2, 4, or 8
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- Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
- Easy-to-use refresh functions include auto- or self-refresh
- Programmable mode register allows the system to choose the most suitable modes to maximize performance
- Fast clock rates of 200 MHz and 166 MHz
- Operate from a single +2.5 V (± 0.2 V) power supply
- Lead (Pb)- and halogen-free
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