Alliance Memory's line of high-speed, CMOS, double-data-rate 3 synchronous DRAMs (DDR3 SDRAM) and low-voltage, DDR3L SDRAMs feature densities of 1 GB, 2 GB, 4 GB and 8G in 78-ball, 9 mm x 10.5 mm x 1.2 mm and 96-ball, 9 mm x 13 mm x 1.2 mm, FBGA packages. With minimal die shrinks, the DDR3 (1.5 V) and DDR3L (1.35 V) SDRAMs provide reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions used in conjunction with newer generation microprocessors, eliminating the need for costly redesigns and part requalification.

Features

• Internally configured as eight banks of 64 M, 128 M, 256 M, 512 M and 1G x 8 bits and / or 16 bits
• Power supply:
  
  • +1.5 V (±0.075 V) (AS4C64M16D3, AS4C128M8D3, AS4C128M16D3, AS4C256M8D3, AS4C256M16D3, and AS4C512M8D3 DDR3 SDRAMs)
  • +1.35 V (AS4C64M16D3L, AS4C128M8D3L, AS4C128M16D3L, AS4C256M8D3L, AS4C256M16D3L, AS4C512M8D3L, AS4C512M16D3L and AS4C1G8MD3L DDR3L SDRAMs)
• Offered in 78-ball and 96-ball FBGA packages
• Double-data-rate 3 architecture for extremely fast transfer rates of up to 1600 Mbps / pin and clock rates of 800 MHz
• Enhanced, collaborative, co-existence algorithms
• Available in a commercial (extended) temperature range of 0°C to +95°C and an industrial temperature range of -40°C to +95°C temperature ranges
• Fully-synchronous operation
• Programmable read or write burst lengths of four or eight
• Auto pre-charge function provides a self-timed row, pre-charge is initiated at the end of the burst sequence
• Easy-to-use refresh functions include auto- or self-refresh
• RoHS compliant
• Lead (Pb)- and halogen-free
• Programmable mode register allows the system to choose the most suitable modes to maximize performance