HMC8038 and HMC7992 Silicon Switches

By Analog Devices Inc 67

HMC8038 and HMC7992 Silicon Switches

Analog Devices' HMC8038 is a high isolation, nonreflective, 0.1 GHz to 6 GHz, silicon, single-pole, double-throw (SPDT) switch in a leadless, surface-mount package. The switch is ideal for cellular infrastructure applications, yielding up to 62 dB of isolation up to 4 GHz, a low 0.8 dB of insertion loss up to 4 GHz, and 60 dBm of input third-order intercept. Power handling is excellent up to 6 GHz, and it offers an input power for an 0.1 dB compression point (P0.1 dB) of 35 dBm (VDD = 5 V). On-chip circuitry operates a single, positive supply voltage from 3.3 V to 5 V, as well as a single, positive voltage control from 0 V to 1.8 V/3.3 V/5 V at very low dc currents. An enable input (EN) set to logic high places the switch in an all off state, in which RFC is reflective.

The HMC8038 has ESD protection on all device pins, including the RF interface, and can stand 4 kV HMB and 1.25 kV CDM. The HMC8038 offers very fast switching and RF settling times of 150 ns and 170 ns, respectively. The device comes in a RoHS-compliant, compact 4 mm x 4 mm LFCSP package.

The HMC7992 is a general-purpose, non-reflective, 0.1 GHz to 6 GHz, silicon, single-pole, four-throw (SP4T) switch in a leadless, surface-mount package. The switch is ideal for cellular infrastructure applications, offers high isolation of 45 dB typical at 2 GHz, and a low insertion loss of 0.6 dB at 2 GHz. It offers excellent power handling capability up to 6 GHz with input power of 1 dB compression point (P1dB) of 35 dBm at 5 V operation. The HMC7992 has good low frequency input power handling below 0.1 GHz and can operate well down to 10 kHz with a typical 1 dB compression of 21 dBm and an IIP3 of 37 dBm at 1 MHz.

The on-chip circuitry allows the HMC7992 to operate at a single, positive supply voltage range from 3.3 V to 5 V, as well as a single, positive control voltage from 0 V to 1.8 V/3.3 V/5 V. A 2:4 decoder integrated in the switch requires only two controlled input signals with a positive control voltage ranges from 0 V to 1.8 V/3.3 V/5 V to select one of the four radio frequency (RF) paths.

HMC8038 Features
  • Non-reflective, 50 Ω design
  • High isolation: 60 dB typical
  • Low insertion loss: 0.8 dB typical
  • High power handling
    • 34 dBm through path and 29 dBm terminated path
  • High linearity
    • 0.1 dB compression (P0.1dB): 35 dBm typical
    • Input third-order intercept (IP3): 60 dBm typical
  • ESD ratings
    • 4 kV human body model (HBM), Class 3A
    • 1.25 kV charged device model (CDM)
HMC7992 Features
  • Non-reflective, 50 Ω design
  • High isolation: 45 dB typical at 2 GHz
  • Low insertion loss: 0.6 dB at 2 GHz
  • High power handling
    • 33 dBm through path and 27 dBm terminated path
  • High linearity
    • 1dB compression (P1dB) 35 dBm typical
    • Input third-order intercept (IIP3): 58 dBm typical
  • ESD ratings
    • 2 kV human body
Applications
  • Cellular/4G infrastructure
  • Automotive telematics
  • Mobile radios
  • Test equipment

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