Toshiba has expanded its family of ultra-high efficiency, low-voltage MOSFETs by adding 30 V and 40 V devices to the company’s existing lineup. All of the devices are available in ultra-compact TSON Advance and SOP Advance package options that realize the low ON resistance and low Q_OSS for increased efficiency in switching mode power supplies used in base stations, servers, or industrial equipment.

Comprising one 30 V device and one 40 V device, the N-channel MOSFETs are based on Toshiba’s next-generation U-MOS IX-H trench semiconductor process. This process has been designed to deliver "best-in-class" efficiency across a wide range of load conditions by driving down ON resistance (R_DS(ON)) and improving switching efficiency by reducing output charge (Q_OSS).

The MOSFETs will help designers to reduce losses and board space in a variety of power-management circuits including high-side and low-side switching in DC-DC conversion and secondary-side synchronous rectification in AC-DC designs. The technologies are also ideal for motor control and for protection circuit modules in electronic equipment based on Lithium ion (Li-ion) batteries.

At a voltage (V_GS) of 10 V, the maximum R_DS(ON) rating for the 30 V MOSFET is just 0.65 mΩ, while typical C_OSS is 2720 pF. The 40 V item offers R_DS(ON) and typical C_OSS ratings: 0.85 mΩ and 1930 pF. This ensures enhanced flexibility for optimizing performance in a given application.

The UMOS IX-H MOSFETs are available in low-profile, surface-mount packages TSON Advance (3 mm x 3 mm) and SOP Advance (5 mm x 6 mm). All of the MOSFETs will operate with channel temperatures up to 175°C.